Vishay IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Data Sheet

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)	500
RDS(on) ( )	VGS = 10 V	1.7
Qg (Max.) (nC)	24
Qgs (nC)	6.5
Qgd (nC)	13
Configuration	Single
		D
DPAK	IPAK
(TO-252)	(TO-251)
D
D
	G
S	D S
G

G

S

N-Channel MOSFET

FEATURES

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic

dV/dt Ruggedness

• Fully Characterized Capacitance and

Avalanche Voltage and Current

•Effective Coss Specified

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

•Switch Mode Power Supply (SMPS)

•Uninterruptible Power Supply

•High Speed Power Switching

ORDERING INFORMATION

	Package	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	IPAK (TO-251)
	Lead (Pb)-free and	SiHFR430A-GE3	SiHFR430ATR-GE3a	SiHFR430ATRL-GE3a	SiHFR430ATRR-GE3a	SiHFU430A-GE3
	Halogen-free
	Lead (Pb)-free	IRFR430APbF	IRFR430ATRPbFa	IRFR430ATRLPbFa	IRFR430ATRRPbFa	IRFU430APbF
		SiHFR430A-E3	SiHFR430AT-E3a	SiHFR430ATL-E3a	SiHFR430ATR-E3a	SiHFU430A-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 30
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	5.0
			TC = 100 °C		3.2	A
Pulsed Drain Currenta				IDM	20
Linear Derating Factor					0.91	W/°C
Single Pulse Avalanche Energyb				EAS	130	mJ
Repetitive Avalanche Currenta				IAR	5.0	A
Repetitive Avalanche Energya				EAR	11	mJ
Maximum Power Dissipation		TC = 25 °C		PD	110	W
Peak Diode Recovery dV/dtc				dV/dt	3.0	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)d		for 10 s			300

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 11 mH, Rg = 25 , IAS = 5.0 A (see fig. 12).

c.ISD 5.0 A, dI/dt 320 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

S12-0168-Rev. D, 04-Feb-13	1	Document Number: 91276
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

www.vishay.com				Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.1

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									500	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	0.60	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.5	V
Gate-Source Leakage		IGSS	VGS = ± 30 V									-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 500 V, VGS = 0 V									-	-	25	μA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 3.0 Ab							-	-	1.7
Forward Transconductance		gfs	VDS = 50 V, ID = 3.0 A									2.3	-	-	S
Dynamic
Input Capacitance		Ciss		VGS = 0 V,								-	490	-
Output Capacitance		Coss		VDS = 25 V,								-	75	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss										-	4.5	-
Output Capacitance		Coss			VDS = 1.0 V, f = 1.0 MHz							-	750	-
			VGS = 10 V		VDS = 400 V, f = 1.0 MHz							-	25	-	pF
Effective Output Capacitance		Coss eff.			VDS = 0 V to 400 Vc							-	51	-
Total Gate Charge		Qg			ID = 5.0 A, VDS = 400 V,							-	-	24
Gate-Source Charge		Qgs	VGS = 10 V									-	-	6.5	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd										-	-	13
Turn-On Delay Time		td(on)										-	8.7	-
Rise Time		tr	VDD = 250 V, ID = 5.0 A,									-	27	-	ns
Turn-Off Delay Time		td(off)	Rg = 15 , RD = 50 , see fig. 10b									-	17	-
Fall Time		tf										-	16	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	5.0
			showing the												A
			integral reverse		G
Pulsed Diode Forward Currenta		I										-	-	20
			p - n junction diode
		SM									S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb									-	-	1.5	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μsb									-	410	620	ns
Body Diode Reverse Recovery Charge		Qrr										-	1.4	2.1	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.

S12-0168-Rev. D, 04-Feb-13	2	Document Number: 91276
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	100	VGS
	TOP	15V
		10V
<![if ! IE]> <![endif]>A)(t		8.0V
	10	7.0V
		6.0V
<![if ! IE]> <![endif]>n		5.5V
<![if ! IE]> <![endif]>err
		5.0V
<![if ! IE]> <![endif]>u	BOTTOM	4.5V
<![if ! IE]> <![endif]>C	1
<![if ! IE]> <![endif]>ecuor S-
	0.1
<![if ! IE]> <![endif]>aot-nir
			4.5V
<![if ! IE]> <![endif]>D,
	0.01
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I			20μs PULSE WIDTH
			Tj = 25°C
	0.001
	0.1	1	10	100

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	100	VGS
	TOP	15V
		10V
<![if ! IE]> <![endif]>A)(t		8.0V
		7.0V
	10	6.0V
<![if ! IE]> <![endif]>n		5.5V
<![if ! IE]> <![endif]>err
		5.0V
<![if ! IE]> <![endif]>u	BOTTOM	4.5V
<![if ! IE]> <![endif]>Cecur
	1
<![if ! IE]> <![endif]>oS-
<![if ! IE]> <![endif]>ot-ni			4.5V
<![if ! IE]> <![endif]>aDr	0.1
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I			20μs PULSE WIDTH
	0.01		Tj = 150°C
	0.1	1	10	100

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

	100.00
<![if ! IE]> <![endif]>)Α(	10.00
<![if ! IE]> <![endif]>t
<![if ! IE]> <![endif]>n					TJ = 150°C
<![if ! IE]> <![endif]>err
<![if ! IE]> <![endif]>Ceu cur	1.00
<![if ! IE]> <![endif]>oS-
<![if ! IE]> <![endif]>ot-nai Dr	0.10	TJ = 25°C
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I				VDS = 100V
	0.01			20μs PULSE WIDTH
	4.0	6.0	8.0	10.0	12.0	14.0	16.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

		3.0
		ID = 5.0A
<![if ! IE]> <![endif]>ResistanceOnSource-to-Drain	<![if ! IE]> <![endif]>(Normalized)	2.5
		2.0
		1.5
		1.0
<![if ! IE]> <![endif]>,		0.5
<![if ! IE]> <![endif]>DS(on)
				V GS = 10V
<![if ! IE]> <![endif]>R		0.0
		-60 -40 -20 0	20 40 60 80	100 120 140 160
		T , Junction Temperature		( ° C)
		J

Fig. 4 - Normalized On-Resistance vs. Temperature

S12-0168-Rev. D, 04-Feb-13	3	Document Number: 91276
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

		www.vishay.com
	10000	VGS = 0V,		f = 1 MHZ
		C	= C	+ C	, C	SHORTED
		iss	gs	gd	ds
		Crss	= Cgd
<![if ! IE]> <![endif]>F)	1000	Coss = Cds+ Cgd
			Ciss
<![if ! IE]> <![endif]>pecn( acti
	100
<![if ! IE]> <![endif]>ap			Coss
<![if ! IE]> <![endif]>CCa,
	10
			Crss
	1
	1	10			100	1000

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

	12	5.0A
	ID =		VDS	= 400V
			VDS	= 250V
	10		VDS	= 100V
<![if ! IE]> <![endif]>(V)
<![if ! IE]> <![endif]>-Source Voltage	7
	5
<![if ! IE]> <![endif]>, Gate-to	2
<![if ! IE]> <![endif]>GS
<![if ! IE]> <![endif]>V
	0
	0	4	8	12	16	20

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Vishay Siliconix

100

<![if ! IE]> <![endif]>(A)	10
<![if ! IE]> <![endif]>Drain Current
		°		T = 25	° C
<![if ! IE]> <![endif]>Reverse,	T = 150		C
				J
	J
	1
<![if ! IE]> <![endif]>SD
<![if ! IE]> <![endif]>I
	0.1				V GS= 0 V
	0.2	0.5		0.8	1.1	1.4

V SD,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

	100	OPERATION IN THIS AREA
<![if ! IE]> <![endif]>)A( neutr r		LIMITED BY RDS(on)
	10
<![if ! IE]> <![endif]>Cecr uo			100μsec
<![if ! IE]> <![endif]>Son-t-i
	1
<![if ! IE]> <![endif]>ar			1msec
<![if ! IE]> <![endif]>D,
<![if ! IE]> <![endif]>D	Tc = 25°C
<![if ! IE]> <![endif]>I
	Tj = 150°C		10msec
	Single Pulse
	0.1
	10	100	1000	10000
	VDS	, Drain-toSource Voltage (V)
	Fig. 8 - Maximum Safe Operating Area

S12-0168-Rev. D, 04-Feb-13	4	Document Number: 91276
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000