Vishay BYW82, BYW83, BYW84, BYW85, BYW86 Schematics

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BYW82, BYW83, BYW84, BYW85, BYW86

www.vishay.com

Vishay Semiconductors

 

Standard Avalanche Sinterglass Diode

949588

MECHANICAL DATA

Case: SOD-64

Terminals: plated axial leads, solderable per MIL-STD-750, method 2026

Polarity: color band denotes cathode end

Mounting position: any

Weight: approx. 858 mg

FEATURES

Glass passivated junction

Hermetically sealed package

Controlled avalanche characteristics

Low reverse current

High surge current loading

AEC-Q101 qualified

Material categorization:

for definitions of compliance please see www.vishay.com/doc?99912

APPLCIATIONS

Rectification, general purpose

ORDERING INFORMATION (Example)

DEVICE NAME

ORDERING CODE

TAPED UNITS

MINIMUM ORDER QUANTITY

 

 

 

 

BYW82 or BYW83 or BYW84 and BYW86

BYW86-TR

2500 per 10" tape and reel

12 500

 

 

 

 

BYW82 or BYW84 and BYW85

BYW85-TAP

2500 per ammopack

12 500

 

 

 

 

BYW85

BYW85TR

2500 per 10" tape and reel

12 500

 

 

 

 

BYW83 or BYW86

BYW86TAP

2500 per ammopack

12 500

 

 

 

 

PARTS TABLE

PART

TYPE DIFFERENTIATION

PACKAGE

 

 

 

BYW82

VR = 200 V, IF(AV) = 3 A

SOD-64

BYW83

VR = 400 V, IF(AV) = 3 A

SOD-64

BYW84

VR = 600 V, IF(AV) = 3 A

SOD-64

BYW85

VR = 800 V, IF(AV) = 3 A

SOD-64

BYW86

VR = 1000 V, IF(AV) = 3 A

SOD-64

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

 

 

 

 

 

 

 

 

BYW82

VR = VRRM

200

V

Reverse voltage = repetitive peak reverse

 

BYW83

VR = VRRM

400

V

See electrical characteristics

BYW84

VR = VRRM

600

V

voltage

 

BYW85

VR = VRRM

800

V

 

 

 

 

BYW86

VR = VRRM

1000

V

Peak forward surge current

tp = 10 ms, half sine wave

 

IFSM

100

A

Repetitive peak forward current

 

 

IFRM

18

A

Average forward current

 

 

IF(AV)

3

A

Pulse avalanche peak power

tp = 20 μs, half sine wave, Tj = 175 °C

 

PR

1000

W

Pulse energy in avalanche mode, non

I(BR)R = 1 A, Tj = 175 °C

 

ER

20

mJ

repetitive (inductive load switch off)

 

 

 

 

 

 

 

 

 

 

 

 

i2t-rating

 

 

i2t

40

A2s

Junction and storage temperature range

 

 

Tj = Tstg

-55 to +175

°C

 

 

 

 

 

 

Rev. 2.0, 04-Nov-15

1

 

Document Number: 86051

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Vishay BYW82, BYW83, BYW84, BYW85, BYW86 Schematics

BYW82, BYW83, BYW84, BYW85, BYW86

www.vishay.com

Vishay Semiconductors

 

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

 

 

 

 

 

Junction ambient

Lead length l = 10 mm, TL = constant

RthJA

25

K/W

On PC board with spacing 25 mm

RthJA

70

K/W

 

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

Forward voltage

IF = 3 A

VF

-

-

1

V

Reverse current

VR = VRRM

IR

-

0.1

1

μA

VR = VRRM, Tj = 100 °C

IR

-

5

10

μA

 

Breakdown voltage

IR = 100 μA, tp/T = 0.01, tp = 0.3 ms

V(BR)

-

-

1600

V

Diode capacitance

VR = 4 V, f = 1 MHz

CD

-

40

60

pF

Reverse recovery time

IF = 0.5 A, IR = 1 A, iR = 0.25 A

trr

-

3.5

5

μs

IF = 1 A, dI/dt = 5 A/μs, VR = 50 V

trr

-

4.5

7.5

μs

 

Reverse recovery charge

lF = 1 A, dI/dt = 5 A/μs

Qrr

-

8

12

μC

TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

 

 

40

 

Resist.

(K/W)

30

 

 

 

R

Junction/Ambient

 

 

Therm.

 

l

l

 

 

20

 

-

 

 

 

thJA

 

10

 

 

 

 

 

 

TL = constant

 

 

0

 

0

5

10

15

20

25

30

94 9563

 

I - Lead Length (mm)

 

 

Fig. 1 - Max. Thermal Resistance vs. Lead Length

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(A)

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current

 

 

Tj

= 175 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward-

 

 

 

 

 

 

 

 

 

 

 

Tj = 25 °C

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

F

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.001

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

0.4

 

0.8

1.2

1.6

2.0

16360

 

 

 

VF - Forward Voltage (V)

 

 

Fig. 3 - Forward Current vs. Forward Voltage

(A)

3.5

 

 

 

 

 

 

 

 

VR = VRRM

Current

3.0

 

 

 

half sinewave

 

 

 

 

RthJA = 25 K/W

2.5

 

 

 

I = 10 mm

 

 

 

 

Forward

2.0

 

 

 

 

1.5

 

 

 

 

Average

 

 

 

 

1.0

 

 

 

 

0.5

RthJA = 70 K/W

-

PCB: d = 25 mm

FAV

 

0.0

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

0

20

40

60

80 100 120 140 160 180

16361 Tamb - Ambient Temperature (°C)

(mW)

 

350

 

 

 

VR = VRRM

 

 

 

 

 

 

 

Dissipation

 

300

 

 

 

 

 

 

 

250

 

 

 

 

 

 

 

200

 

 

 

PR-Limit

 

 

 

 

 

 

at 100 % VR

 

Power

 

 

 

 

 

 

150

 

 

 

 

 

 

 

 

 

 

PR-Limit

 

 

Reverse

 

100

 

 

 

 

 

 

 

at 80 % VR

 

 

 

50

 

 

 

 

 

 

-

 

 

 

 

 

 

 

 

R

0

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

25

50

75

100

125

150

175

 

16363

Tj - Junction Temperature (°C)

 

Fig. 2 - Max. Average Forward Current vs. Ambient Temperature

 

Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature

 

 

 

Rev. 2.0, 04-Nov-15

2

Document Number: 86051

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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