BYW82, BYW83, BYW84, BYW85, BYW86
www.vishay.com |
Vishay Semiconductors |
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Standard Avalanche Sinterglass Diode
949588
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750, method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
•Glass passivated junction
•Hermetically sealed package
•Controlled avalanche characteristics
•Low reverse current
•High surge current loading
•AEC-Q101 qualified
•Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLCIATIONS
•Rectification, general purpose
ORDERING INFORMATION (Example)
DEVICE NAME |
ORDERING CODE |
TAPED UNITS |
MINIMUM ORDER QUANTITY |
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BYW82 or BYW83 or BYW84 and BYW86 |
BYW86-TR |
2500 per 10" tape and reel |
12 500 |
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BYW82 or BYW84 and BYW85 |
BYW85-TAP |
2500 per ammopack |
12 500 |
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BYW85 |
BYW85TR |
2500 per 10" tape and reel |
12 500 |
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BYW83 or BYW86 |
BYW86TAP |
2500 per ammopack |
12 500 |
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PARTS TABLE
PART |
TYPE DIFFERENTIATION |
PACKAGE |
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BYW82 |
VR = 200 V, IF(AV) = 3 A |
SOD-64 |
BYW83 |
VR = 400 V, IF(AV) = 3 A |
SOD-64 |
BYW84 |
VR = 600 V, IF(AV) = 3 A |
SOD-64 |
BYW85 |
VR = 800 V, IF(AV) = 3 A |
SOD-64 |
BYW86 |
VR = 1000 V, IF(AV) = 3 A |
SOD-64 |
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER |
TEST CONDITION |
PART |
SYMBOL |
VALUE |
UNIT |
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BYW82 |
VR = VRRM |
200 |
V |
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Reverse voltage = repetitive peak reverse |
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BYW83 |
VR = VRRM |
400 |
V |
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See electrical characteristics |
BYW84 |
VR = VRRM |
600 |
V |
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voltage |
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BYW85 |
VR = VRRM |
800 |
V |
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BYW86 |
VR = VRRM |
1000 |
V |
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Peak forward surge current |
tp = 10 ms, half sine wave |
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IFSM |
100 |
A |
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Repetitive peak forward current |
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IFRM |
18 |
A |
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Average forward current |
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IF(AV) |
3 |
A |
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Pulse avalanche peak power |
tp = 20 μs, half sine wave, Tj = 175 °C |
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PR |
1000 |
W |
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Pulse energy in avalanche mode, non |
I(BR)R = 1 A, Tj = 175 °C |
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ER |
20 |
mJ |
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repetitive (inductive load switch off) |
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i2t-rating |
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i2t |
40 |
A2s |
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Junction and storage temperature range |
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Tj = Tstg |
-55 to +175 |
°C |
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Rev. 2.0, 04-Nov-15 |
1 |
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Document Number: 86051 |
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW82, BYW83, BYW84, BYW85, BYW86
www.vishay.com |
Vishay Semiconductors |
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MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
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Junction ambient |
Lead length l = 10 mm, TL = constant |
RthJA |
25 |
K/W |
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On PC board with spacing 25 mm |
RthJA |
70 |
K/W |
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ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER |
TEST CONDITION |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
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Forward voltage |
IF = 3 A |
VF |
- |
- |
1 |
V |
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Reverse current |
VR = VRRM |
IR |
- |
0.1 |
1 |
μA |
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VR = VRRM, Tj = 100 °C |
IR |
- |
5 |
10 |
μA |
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Breakdown voltage |
IR = 100 μA, tp/T = 0.01, tp = 0.3 ms |
V(BR) |
- |
- |
1600 |
V |
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Diode capacitance |
VR = 4 V, f = 1 MHz |
CD |
- |
40 |
60 |
pF |
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Reverse recovery time |
IF = 0.5 A, IR = 1 A, iR = 0.25 A |
trr |
- |
3.5 |
5 |
μs |
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IF = 1 A, dI/dt = 5 A/μs, VR = 50 V |
trr |
- |
4.5 |
7.5 |
μs |
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Reverse recovery charge |
lF = 1 A, dI/dt = 5 A/μs |
Qrr |
- |
8 |
12 |
μC |
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
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40 |
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Resist. |
(K/W) |
30 |
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R |
Junction/Ambient |
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Therm. |
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l |
l |
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20 |
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- |
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thJA |
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10 |
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TL = constant |
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0 |
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0 |
5 |
10 |
15 |
20 |
25 |
30 |
94 9563 |
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I - Lead Length (mm) |
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Fig. 1 - Max. Thermal Resistance vs. Lead Length
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100 |
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(A) |
10 |
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Current |
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Tj |
= 175 °C |
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Forward- |
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Tj = 25 °C |
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0.1 |
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F |
0.01 |
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I |
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0.001 |
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0 |
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0.4 |
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0.8 |
1.2 |
1.6 |
2.0 |
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16360 |
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VF - Forward Voltage (V) |
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Fig. 3 - Forward Current vs. Forward Voltage
(A) |
3.5 |
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VR = VRRM |
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Current |
3.0 |
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half sinewave |
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RthJA = 25 K/W |
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2.5 |
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I = 10 mm |
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Forward |
2.0 |
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1.5 |
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Average |
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1.0 |
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0.5 |
RthJA = 70 K/W |
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PCB: d = 25 mm |
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FAV |
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0.0 |
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I |
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0 |
20 |
40 |
60 |
80 100 120 140 160 180 |
16361 Tamb - Ambient Temperature (°C)
(mW) |
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350 |
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VR = VRRM |
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Dissipation |
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300 |
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250 |
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200 |
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PR-Limit |
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at 100 % VR |
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Power |
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150 |
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PR-Limit |
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Reverse |
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100 |
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at 80 % VR |
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50 |
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- |
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R |
0 |
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P |
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25 |
50 |
75 |
100 |
125 |
150 |
175 |
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16363 |
Tj - Junction Temperature (°C) |
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Fig. 2 - Max. Average Forward Current vs. Ambient Temperature |
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Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature |
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Rev. 2.0, 04-Nov-15 |
2 |
Document Number: 86051 |
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000