Vishay IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Data Sheet

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)			400
RDS(on) ( )		VGS = 10 V	0.55
Qg (Max.) (nC)			36
Qgs (nC)			9.9
Qgd (nC)			16
Configuration		Single
			D
I2PAK (TO-262)	D2PAK (TO-263)
	G	G
	D S	D
G		S
			S
			N-Channel MOSFET

FEATURES

•Halogen-free According to IEC 61249-2-21 Definition

•Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

•Fully Characterized Capacitance and Avalanche Voltage and Current

•Effective Coss specified

•Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•Switch Mode Power Supply (SMPS)

•Uninterruptible Power Supply

•High speed Power Switching

TYPICAL SMPS TOPOLOGIES

•Single Transistor Flyback Xfmr. Reset

•Single Transistor Forward Xfmr. Reset (Both for US Line Input Only)

ORDERING INFORMATION

Package

D2PAK (TO-263)

D2PAK (TO-263)

D2PAK (TO-263)

I2PAK (TO-262)

Lead (Pb)-free and Halogen-free

SiHF740AS-GE3

SiHF740ASTRL-GE3a

SiHF740ASTRR-GE3a

SiHF740AL-GE3

Lead (Pb)-free

IRF740ASPbF

IRF740ASTRLPbFa

IRF740ASTRRPbFa

IRF740ALPbF

SiHF740AS-E3

SiHF740ASTL-E3a

SiHF740ASTR-E3a

SiHF740AL-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

400

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Currente

VGS at 10 V

TC = 25 °C

ID

10

TC = 100 °C

6.3

A

Pulsed Drain Currenta, e

IDM

40

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energyb, e

EAS

630

mJ

Avalanche Currenta

IAR

10

A

Repetiitive Avalanche Energya

EAR

12.5

mJ

Maximum Power Dissipation

TA = 25 °C

PD

3.1

W

TC = 25 °C

125

Peak Diode Recovery dV/dtc, e

dV/dt

5.9

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 12.6 mH, Rg = 25 , IAS = 10 A (see fig. 12).

c.ISD 10 A, dI/dt 330 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.Uses IRF740A, SiHF740A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91052	www.vishay.com
S11-1048-Rev. C, 30-May-11	1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient (PCB	RthJA	-	40
Mounted, Steady-State)a				°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.0

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0, ID = 250 μA								400	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mAd								-	0.48	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA								2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 30 V							-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 400 V, VGS = 0 V								-	-	25	μA
			VDS = 320 V, VGS = 0 V, TJ = 125 °C								-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 6.0 Ab						-	-	0.55
Forward Transconductance		gfs	VDS = 50 V, ID = 6.0 Ad								4.9	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,						-	1030	-
Output Capacitance		Coss			VDS = 25 V,						-	170	-
			f = 1.0 MHz, see fig. 5d
Reverse Transfer Capacitance		Crss									-	7.7	-	pF
Output Capacitance		Coss			VDS = 1.0 V, f = 1.0 MHz						-	1490	-
			VGS = 0 V		VDS = 320 V, f = 1.0 MHz						-	52	-
Effective Output Capacitance		Coss eff.			VDS = 0 V to 320 Vc, d						-	61	-
Total Gate Charge		Qg			ID = 10 A, VDS = 320 V,						-	-	36
Gate-Source Charge		Qgs	VGS = 10 V								-	-	9.9	nC
					see fig. 6 and 13b, d
Gate-Drain Charge		Qgd									-	-	16
Turn-On Delay Time		td(on)									-	10	-
Rise Time		tr	VDD = 200 V, ID = 10 A,								-	35	-	ns
Turn-Off Delay Time		td(off)	Rg = 10 , RD = 19.5 , see fig. 10b, d								-	24	-
Fall Time		tf									-	22	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								-	-	10
			showing the							D
			integral reverse											A
Pulsed Diode Forward Currenta		ISM			G						-	-	40
			p - n junction diode							S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 10 A, VGS = 0 Vb								-	-	2.0	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb, d								-	240	360	ns
Body Diode Reverse Recovery Charge		Qrr									-	1.9	2.9	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.

d.Uses IRF740A, SiHF740A data and test conditions.

www.vishay.com	Document Number: 91052
2	S11-1048-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	102	VGS
<![if ! IE]> <![endif]>(A)	Top	15 V
		10 V
<![if ! IE]> <![endif]>Current		8.0 V
	10	7.0 V
		6.0 V
		5.5 V
		5.0 V
<![if ! IE]> <![endif]>-to-Source	Bottom 4.5 V
	1
			4.5 V
<![if ! IE]> <![endif]>, Drain	0.1
<![if ! IE]> <![endif]>D			20 µs Pulse Width
<![if ! IE]> <![endif]>I
	10-2		TJ = 25 °C
				102
	0.1	1	10

91052_01

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	102	VGS
	Top
<![if ! IE]> <![endif]>(A)		15 V
		10 V
<![if ! IE]> <![endif]>Current
		8.0 V
	10	7.0 V
		6.0 V
<![if ! IE]> <![endif]>-to-Source		5.5 V
		5.0 V
	Bottom	4.5 V
	1			4.5 V
<![if ! IE]> <![endif]>, Drain
<![if ! IE]> <![endif]>D			20 µs Pulse Width
<![if ! IE]> <![endif]>I
	0.1		TJ = 150 °C
	0.1	1	10	102

91052_02

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

	102
<![if ! IE]> <![endif]>(A)
<![if ! IE]> <![endif]>Current	10
	TJ	= 150 °C
<![if ! IE]> <![endif]>-to-Source
	1
<![if ! IE]> <![endif]>, Drain			TJ = 25 °C
<![if ! IE]> <![endif]>D					20 µs Pulse Width
<![if ! IE]> <![endif]>I
	0.1				VDS = 50 V
	4.0	5.0	6.0	7.0	8.0	9.0	10.0

91052_03

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>Resistance		3.0
		ID = 10 A
		VGS = 10 V
		2.5
<![if ! IE]> <![endif]>Drain-to-Source On	<![if ! IE]> <![endif]>(Normalized)	2.0
		1.5
		1.0
		0.5
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>DS(on)
		0.0
<![if ! IE]> <![endif]>R
		- 60 - 40 - 20	0	20	40	60	80	100 120 140 160

91052_04

TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91052	www.vishay.com
S11-1048-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000