VISHAY DG643DY, DG643DJ, DG642DY, DG642DJ, DG641DY Datasheet
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DG641/642/643
Vishay Siliconix
Low On-Resistance Wideband/Video Switches
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C |
Wide Bandwidth: 500 MHz |
High Precision |
RF and Video Switching |
Low Crosstalk at 5 MHz: ±85 dB |
Improved Frequency Response |
RGB Switching |
Low rDS(on): 5 , DG642 |
Low Insertion Loss |
Video Routing |
TTL Logic Compatible |
Improved System Performance |
Cellular Communications |
Fast Switching: tON 50 ns |
Reduced Board Space |
ATE |
Single Supply Compatibility |
Low Power Consumption |
Radar/FLIR Systems |
High Current: 100 mA, DG642 |
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Satellite Receivers |
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Programmable Filters |
D C |
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The DG641/642/643 are high performance monolithic video switches designed for switching wide bandwidth analog and digital signals. DG641 is a quad SPST, DG642 is a single SPDT, and DG643 is a dual SPDT function. These devices have exceptionally low on-resistances (5 typÐDG642), low capacitance and high current handling capability.
To achieve TTL compatibility, low channel capacitances and fast switching times, the DG641/642/643 are built on the Vishay Siliconix proprietary D/CMOS process. Each switch conducts equally well in both directions when on, and blocks up to 14 Vp-p when off. An epitaxial layer prevents latchup.
C C D G D C G
Dual-In-Line and SOIC |
Dual-In-Line and SOIC |
IN1 |
1 |
16 |
IN2 |
D1 |
2 |
15 |
D2 |
S1 |
3 |
14 |
S2 |
V± |
4 |
13 |
V+ |
GND |
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DG641 |
GND |
5 |
12 |
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S4 |
6 |
11 |
S3 |
D4 |
7 |
10 |
D3 |
IN4 |
8 |
9 |
IN3 |
Top View
S1 1
D1 2
V± 3
GND 4
Dual-In-Line and SOIC |
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8 |
IN |
7 |
V+ |
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6 |
D2 |
5 |
S2 |
DG642 |
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Top View |
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IN1 |
1 |
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16 |
IN2 |
D1 |
2 |
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15 |
D2 |
GND |
3 |
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14 |
GND |
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S1 |
4 |
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13 |
S2 |
V± |
5 |
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12 |
V+ |
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S4 |
6 |
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11 |
S3 |
GND |
7 |
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10 |
GND |
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D4 |
8 |
DG643 |
9 |
D3 |
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Top View
DG |
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DG |
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DG |
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Logic |
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Switch |
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Logic |
SW1 |
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SW2 |
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Logic |
SW1, SW2 |
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SW3, SW4 |
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0 |
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OFF |
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OFF |
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ON |
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0 |
OFF |
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ON |
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1 |
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ON |
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1 |
ON |
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OFF |
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ON |
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OFF |
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Logic ª0º 0.8 V |
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Logic ª0º 0.8 V |
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Logic ª0º 0.8 V |
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Logic ª1º 2.4 V |
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Logic ª1º 2.4 V |
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Logic ª1º 2.4 V |
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Document Number: 70058 |
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www.vishay.com FaxBack 408-970-5600 |
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S-52433ÐRev. E, 06-Sep-99 |
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4-1 |
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DG641/642/643
Vishay Siliconix
ORDERING INFORMATION
Temp Range |
Package |
Part Number |
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DG641 |
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±40 to 85_C |
16-Pin Plastic DIP |
DG641DJ |
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16-Pin Narrow SOIC |
DG641DY |
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DG642 |
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±40 to 85_C |
8-Pin Plastic DIP |
DG642DJ |
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8-Pin Narrow SOIC |
DG642DY |
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DG643 |
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±40 to 85_C |
16-Pin Plastic DIP |
DG643DJ |
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16-Pin Narrow SOIC |
DG643DY |
ABSOLUTE MAXIMUM RATINGS
V+ to V± . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.3 V to 21 V V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.3 V to 21 V V± to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±19 V to +0.3 V Digital Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V±) ±0.3 V to (V+) +0.3 V or 20 mA, whichever occurs first
VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V±) ±0.3 V to (V±) +14 V or 20 mA, whichever occurs first
Continuous Current (Any Terminal Except S or D) . . . . . . . . . . . . . . . . 20 mA Continuous Current S or D: DG641/643 . . . . . . . . . . . . . . . . . . . . . . . 75 mA DG642 . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle max)
DG641/643 . . . . . . . . . . . . . . . . . . . . . . 200 mA DG642 . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±65 to 125_C Power Dissipation (Package)b
8-Pin Plastic DIP and Narrow SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW 16-Pin Plastic DIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOICe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Notes:
a.Signals on SX, DX, or INX exceeding V+ or V± will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b.All leads welded or soldered to PC Board.
c.Derate 7.6 mW/_C above 75_C
d.Derate 6 mW/_C above 75_C
e.Derate 80 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+ |
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GND |
5 V |
S |
Reg |
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IN |
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D |
V± |
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FIGURE 1.
www.vishay.com S FaxBack 408-970-5600 |
Document Number: 70058 |
4-2 |
S-52433ÐRev. E, 06-Sep-99 |
DG641/642/643
Vishay Siliconix
SPECIFICATIONS FOR DG64 AND DG643
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Test Conditions |
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Limits |
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Unless Otherwise Specified |
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±40 to 85_C |
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V+ = 15 V, V± = ±3 V |
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Parameter |
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Tempa |
Minb |
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Typc |
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Maxb |
Unit |
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= 2.4 V, V |
INL |
= 0.8 Ve |
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INH |
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Analog Switch |
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Analog Signal Rangedd |
V |
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V± = ±5 V, V+ = 12 V |
Full |
±5 |
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8 |
V |
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ANALOG |
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V± = GND, V+ = 12 V |
Full |
0 |
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8 |
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Drain-Source On-Resistance |
rDS(on) |
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Room |
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8 |
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15 |
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IS = ±10 mA, VD = 0 V |
Full |
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20 |
W |
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rDS(on) Match |
DrDS(on) |
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Room |
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1 |
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2 |
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Source Off Leakage Current |
IS(off) |
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VS = 0 V, VD = 10 V |
Room |
±10 |
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±0.02 |
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10 |
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Full |
±100 |
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100 |
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Drain Off Leakage Current |
ID(off) |
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VS = 10 V, VD = 0V |
Room |
±10 |
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±0.02 |
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10 |
nA |
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Full |
±100 |
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100 |
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Channel On Leakage Current |
ID(on) |
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VS = VD = 0 V |
Room |
±10 |
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±0.1 |
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10 |
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Full |
±100 |
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100 |
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Digital Control |
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Input Voltage High |
VINH |
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Full |
2.4 |
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V |
Input Voltage Low |
VINL |
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Full |
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0.8 |
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Input Current |
IIN |
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VIN = GND or V+ |
Room |
±1 |
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0.05 |
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1 |
mA |
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Full |
±20 |
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20 |
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Dynamic Characteristics |
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On State Input Capacitanced |
C |
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V = V |
D |
= 0 V |
Room |
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10 |
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20 |
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S(on) |
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S |
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Off State Input Capacitanced |
C |
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= 0 V |
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Room |
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4 |
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12 |
pF |
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S(off) |
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S |
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Off State Output Capacitanced |
C |
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V |
= 0 V |
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Room |
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4 |
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12 |
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D(off) |
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D |
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Bandwidth |
BW |
RL = 50 W, See Figure 6 |
Room |
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500 |
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Turn On Time |
tON |
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Room |
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50 |
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70 |
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RL = 1 kW, CL = 35 pF, |
See Figure 2 |
Full |
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140 |
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Turn Off Time |
tOFF |
Room |
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28 |
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50 |
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Full |
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85 |
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Charge Injection |
Q |
CL = 1000 pF, VD = 0 V, See Figure 3 |
Room |
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±19 |
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pC |
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Off Isolation |
OIRR |
RIN = 75 W, RL = 75 W, f = 5 MHz |
Room |
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±60 |
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See Figure 4 |
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dB |
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All Hostile Crosstalk |
XTALK(AH) |
RIN = 10 W, RL = 75 W, f = 5 MHz |
Room |
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±87 |
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See Figure 5 |
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Power Supplies |
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Positive Supply Current |
I+ |
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Room |
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3.5 |
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6 |
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Full |
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9 |
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VIN = 0 V or VIN = 5 V |
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mA |
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Negative Supply Current |
I± |
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Room |
±6 |
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±3 |
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Full |
±9 |
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Notes:
a.Room = 25_C, Full = as determined by the operating temperature suffix.
b.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d.Guaranteed by design, not subject to production test.
e.VIN = input voltage to perform proper function.
Document Number: 70058 |
www.vishay.com S FaxBack 408-970-5600 |
S-52433ÐRev. E, 06-Sep-99 |
4-3 |
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