Vishay IRFR320, IRFU320, SiHFR320, SiHFU320 Data Sheet

IRFR320, IRFU320, SiHFR320, SiHFU320

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)	400
RDS(on) (Ω)	VGS = 10 V	1.8
Qg (Max.) (nC)	20
Qgs (nC)	3.3
Qgd (nC)	11
Configuration	Single
		D
DPAK	IPAK
(TO-252)	(TO-251)
D	D
	G
S	D S
G

G

S

N-Channel MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Surface mount (IRFR320,SiHFR320)

• Straight lead (IRFU320,SiHFU320)

• Available in tape and reel	Available

•Fast switching

•Ease of paralleling

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

ORDERING INFORMATION

	Package	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	IPAK (TO-251)
	Lead (Pb)-free and Halogen-free	SiHFR320-GE3	SiHFR320TRL-GE3a	SiHFR320TR-GE3 a	-	SiHFU320-GE3
	Lead (Pb)-free	IRFR320PbF	IRFR320TRLPbFa	IRFR320TRPbF a	IRFR320TRRPbF a	IRFU320PbF
		SiHFR320-E3	SiHFR320TL-E3a	SiHFR320T-E3 a	SiHFR320TR-E3 a	SiHFU320-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	400	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	3.1
			TC = 100 °C		2.0	A
Pulsed Drain Current a				IDM	12
Linear Derating Factor					0.33	W/°C
Linear Derating Factor (PCB Mount) e					0.020
Single Pulse Avalanche Energy b				EAS	160	mJ
Repetitive Avalanche Current a				IAR	3.1	A
Repetitive Avalanche Energy a				EAR	4.2	mJ
Maximum Power Dissipation		TC = 25 °C		PD	42	W
Maximum Power Dissipation (PCB Mount)e		TA = 25 °C			2.5
Peak Diode Recovery dV/dt c				dV/dt	4.0	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak Temperature) d		for 10 s			260

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 Ω, IAS = 3.1 A (see fig. 12).

c.ISD ≤ 3.1 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

S14-2355-Rev. E, 08-Dec-14	1	Document Number: 91273
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR320, IRFU320, SiHFR320, SiHFU320

www.vishay.com					Vishay Siliconix
e. When mounted on 1" square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	MIN.	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient	RthJA	-	-	110
Maximum Junction-to-Ambient	RthJA	-	-	50		°C/W
(PCB Mount) a
Maximum Junction-to-Case (Drain)	RthJC	-	-	3.0
Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									400	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	0.51	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 400 V, VGS = 0 V									-	-	25	μA
			VDS = 320 V, VGS = 0 V, TJ = 125 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 1.9 A b						-	-	1.8	Ω
Forward Transconductance		gfs	VDS = 50 V, ID = 1.9 A									1.7	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,							-	350	-
Output Capacitance		Coss		VDS = - 25 V,								-	120	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss										-	47	-
Total Gate Charge		Qg			ID = 3.3 A, VDS = 320 V,							-	-	20
Gate-Source Charge		Qgs	VGS = 10 V									-	-	3.3	nC
					see fig. 6 and 13 b
Gate-Drain Charge		Qgd										-	-	11
Turn-On Delay Time		td(on)										-	10	-
Rise Time		tr	VDD = 200 V, ID = 3.3 A,									-	14	-	ns
Turn-Off Delay Time		td(off)	Rg = 18 Ω, RD = 56 Ω, see fig. 10 b									-	30	-
Fall Time		tf										-	13	-
Internal Drain Inductance		LD	Between lead,							D		-	4.5	-
			6 mm (0.25") from
Internal Source Inductance		LS	package and center of			G						-	7.5	-	nH
			die contact
										S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	3.1
			showing the												A
Pulsed Diode Forward Current a		ISM	integral reverse			G						-	-	12
			p - n junction diode								S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 3.1 A, VGS = 0 V b									-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs b									-	270	600	ns
Body Diode Reverse Recovery Charge		Qrr										-	1.4	3.0	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

S14-2355-Rev. E, 08-Dec-14	2	Document Number: 91273
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR320, IRFU320, SiHFR320, SiHFU320

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

<![if ! IE]>

<![endif]>D

<![if ! IE]>

<![endif]>I , Drain-to-Source Current (A)

10

TJ = 25 °C

TJ = 150 °C

1

0.1

VDS = 26.2V

0.01

4

5

6

7

8

9

10

VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C	Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S14-2355-Rev. E, 08-Dec-14	3	Document Number: 91273
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR320, IRFU320, SiHFR320, SiHFU320

www.vishay.com	Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage			Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

S14-2355-Rev. E, 08-Dec-14	4	Document Number: 91273
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000