IRFR120, IRFU120, SiHFR120, SiHFU120
www.vishay.com |
Vishay Siliconix |
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Power MOSFET |
PRODUCT SUMMARY
VDS (V) |
100 |
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RDS(on) ( ) |
VGS = 10 V |
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0.27 |
Qg (Max.) (nC) |
16 |
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Qgs (nC) |
4.4 |
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Qgd (nC) |
7.7 |
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Configuration |
Single |
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D
DPAK |
IPAK |
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(TO-252) |
(TO-251) |
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D |
D |
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G |
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G |
S |
D |
S |
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G |
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N-Channel MOSFET |
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR120, SiHFR120)
• Straight Lead (IRFU120, SiHFU120)
• Available in Tape and Reel
• Fast Switching
•Ease of Paralleling
•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package |
DPAK (TO-252) |
DPAK (TO-252) |
DPAK (TO-252) |
DPAK (TO-252) |
IPAK (TO-251) |
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Lead (Pb)-free and Halogen-free |
SiHFR120-GE3 |
SiHFR120TR-GE3a |
SiHFR120TRR-GE3a |
SiHFR120TRL-GE3a |
SiHFU120-GE3 |
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Lead (Pb)-free |
IRFR120PbF |
IRFR120TRPbFa |
IRFR120TRRPbFa |
IRFR120TRLPbFa |
IRFU120PbF |
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SiHFR120-E3 |
SiHFR120T-E3a |
SiHFR120TR-E3a |
SiHFR120TL-E3a |
SiHFU120-E3 |
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Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
100 |
V |
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Gate-Source Voltage |
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VGS |
± 20 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
ID |
7.7 |
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TC = 100 °C |
4.9 |
A |
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Pulsed Drain Currenta |
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IDM |
31 |
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Linear Derating Factor |
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0.33 |
W/°C |
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Linear Derating Factor (PCB Mount)e |
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0.020 |
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Single Pulse Avalanche Energyb |
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EAS |
210 |
mJ |
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Repetitive Avalanche Currenta |
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IAR |
7.7 |
A |
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Repetitive Avalanche Energya |
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EAR |
4.2 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
42 |
W |
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Maximum Power Dissipation (PCB Mount)e |
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TA = 25 °C |
2.5 |
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Peak Diode Recovery dV/dtc |
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dV/dt |
5.5 |
V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
°C |
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Soldering Recommendations (Peak Temperature)d |
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for 10 s |
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260 |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 , IAS = 7.7 A (see fig. 12).
c.ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C.
d.1.6 mm from case.
e.When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0171-Rev. C, 04-Feb-13 |
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Document Number: 91266 |
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For technical questions, contact: hvm@vishay.com |
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR120, IRFU120, SiHFR120, SiHFU120
www.vishay.com |
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Vishay Siliconix |
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THERMAL RESISTANCE RATINGS |
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PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
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UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
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110 |
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Maximum Junction-to-Ambient |
RthJA |
- |
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50 |
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°C/W |
(PCB Mount)a |
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Maximum Junction-to-Case (Drain) |
RthJC |
- |
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3.0 |
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Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0 V, ID = 250 μA |
100 |
- |
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V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
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0.13 |
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V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 μA |
2.0 |
- |
4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 20 V |
- |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 100 V, VGS = 0 V |
- |
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25 |
μA |
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VDS = 80 V, VGS = 0 V, TJ = 125 °C |
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250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 4.6 Ab |
- |
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0.27 |
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Forward Transconductance |
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gfs |
VDS = 50 V, ID = 4.6 A |
1.6 |
- |
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S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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360 |
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Output Capacitance |
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Coss |
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pF |
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VDS = 25 V, |
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150 |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
- |
34 |
- |
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Total Gate Charge |
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Qg |
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ID = 9.2 A, VDS = 80 V, |
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16 |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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4.4 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
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7.7 |
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Turn-On Delay Time |
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td(on) |
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- |
6.8 |
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Rise Time |
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tr |
VDD = 50 V, ID = 9.2 A, |
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27 |
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ns |
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Turn-Off Delay Time |
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td(off) |
Rg = 18 , RD = 5.2 , see fig. 10b |
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18 |
- |
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Fall Time |
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tf |
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17 |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
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4.5 |
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6 mm (0.25") from |
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Internal Source Inductance |
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LS |
package and center of |
G |
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- |
7.5 |
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nH |
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die contact |
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S |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
- |
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7.7 |
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showing the |
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A |
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integral reverse |
G |
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Pulsed Diode Forward Currenta |
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I |
p - n junction diode |
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- |
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31 |
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SM |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb |
- |
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2.5 |
V |
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Body Diode Reverse Recovery Time |
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trr |
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb |
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130 |
260 |
ns |
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Body Diode Reverse Recovery Charge |
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Qrr |
- |
0.65 |
1.3 |
μC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
S13-0171-Rev. C, 04-Feb-13 |
2 |
Document Number: 91266 |
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For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR120, IRFU120, SiHFR120, SiHFU120
www.vishay.com |
Vishay Siliconix |
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C |
Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
S13-0171-Rev. C, 04-Feb-13 |
3 |
Document Number: 91266 |
|
For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR120, IRFU120, SiHFR120, SiHFU120
www.vishay.com |
Vishay Siliconix |
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage |
Fig. 7 - Typical Source-Drain Diode Forward Voltage |
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Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage |
Fig. 8 - Maximum Safe Operating Area |
S13-0171-Rev. C, 04-Feb-13 |
4 |
Document Number: 91266 |
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For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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