Vishay IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Data Sheet

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)			- 60
RDS(on) ( )		VGS = - 10 V	0.14
Qg (Max.) (nC)			34
Qgs (nC)			9.9
Qgd (nC)			16
Configuration		Single
			S
I2PAK (TO-262)		D2PAK (TO-263)
		G
		G
	D S	D
G		S
			D
			P-Channel MOSFET

FEATURES

•Halogen-free According to IEC 61249-2-21 Definition

• Advanced Process Technology

• Surface Mount (IRF9Z34S, SiHF9Z34S)

• Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L)

• 175 °C Operating Temperature

•Fast Switching

•P-Channel

•Fully Avalanche Rated

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

The through-hole version (IRF9Z34L, SiHF9Z34L) is available for low-profile applications.

ORDERING INFORMATION

Package

D2PAK (TO-263)

D2PAK (TO-263)

D2PAK (TO-263)

I2PAK (TO-262)

Lead (Pb)-free and Halogen-free

SiHF9Z34S-GE3

SiHF9Z34STRL-GE3a

SiHF9Z34STRR-GE3a

-

Lead (Pb)-free

IRF9Z34SPbF

IRF9Z34STRLPbFa

IRF9Z34STRRPbFa

IRF9Z34LPbF

SiHF9Z34S-E3

SiHF9Z34STL-E3a

SiHF9Z34STR-E3a

SiHF9Z34L-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

- 60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

VGS at - 10 V

TC = 25 °C

ID

- 18

TC = 100 °C

- 13

A

Pulsed Drain Currenta, e

IDM

- 72

Linear Derating Factor

0.59

W/°C

Single Pulse Avalanche Energyb, e

EAS

370

mJ

Avalanche Currenta

IAR

- 18

A

Repetiitive Avalanche Energya

EAR

8.8

mJ

Maximum Power Dissipation

TC = 25 °C

PD

88

W

TA = 25 °C

3.7

Peak Diode Recovery dV/dtc, e

dV/dt

- 4.5

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = - 25 V, starting TJ = 25 °C, L = 1.3 mH, Rg = 25 , IAS = - 18 A (see fig. 12).

c.ISD - 18 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.

d.1.6 mm from case.

e.Uses IRF9Z34, SiHF9Z34 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91093	www.vishay.com
S11-1052-Rev. C, 30-May-11	1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient (PCB	RthJA	-	40
Mounted, steady-state)a				°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.7

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

	PARAMETER	SYMBOL	TEST CONDITIONS			MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 μA			- 60	-	-	V
	VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = - 1 mAc			-	- 0.06	-	V/°C
	Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = - 250 μA			- 2.0	-	- 4.0	V
	Gate-Source Leakage	IGSS		VGS = ± 20 V		-	-	± 100	nA
	Zero Gate Voltage Drain Current	IDSS	VDS = - 60 V, VGS = 0 V			-	-	- 100	μA
			VDS = - 48 V, VGS = 0 V, TJ = 150 °C			-	-	- 500
	Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V		ID = - 11 Ab	-	-	0.14
	Forward Transconductance	gfs	VDS = - 25 V, ID = - 11 Ac			5.9	-	-	S
	Dynamic
	Input Capacitance	Ciss		VGS = 0 V,		-	1100	-
	Output Capacitance	Coss							pF
				VDS = - 25 V,		-	620	-
	Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 5c			-	100	-
	Total Gate Charge	Qg		ID = - 18 A, VDS = - 48 V,		-	-	34
	Gate-Source Charge	Qgs	VGS = - 10 V			-	-	9.9	nC
				see fig. 6 and 13b, c
	Gate-Drain Charge	Qgd				-	-	16
	Turn-On Delay Time	td(on)				-	18	-
	Rise Time	tr	VDD = - 30 V, ID = - 18 A,			-	120	-	ns
	Turn-Off Delay Time	td(off)	Rg = 12 , RD = 1.5 , see fig. 10b, c			-	20	-
	Fall Time	tf				-	58	-
	Drain-Source Body Diode Characteristics
	Continuous Source-Drain Diode Current	IS	MOSFET symbol		D	-	-	- 18
			showing the
									A
			integral reverse		G
	Pulsed Diode Forward Currenta	ISM				-	-	- 72
			p - n junction diode		S

	Body Diode Voltage	VSD	TJ = 25 °C, IS = - 18 A, VGS = 0 Vb	-	-	- 6.3	V
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/μsb, c	-	100	200	ns
	Body Diode Reverse Recovery Charge	Qrr		-	280	520	nC
	Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Uses IRF9Z34,SiHF9Z34 data and test conditions.

www.vishay.com	Document Number: 91093
2	S11-1052-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

102

Top

V

GS

- 15 V

- 10 V

<![if ! IE]> <![endif]>(A)

- 8.0 V

- 7.0 V

<![if ! IE]> <![endif]>Current

- 6.0 V

Bottom - 4.5 V

- 5.5 V

<![if ! IE]> <![endif]>Drain

101

- 5.0 V

- 4.5 V

<![if ! IE]> <![endif]>,

<![if ! IE]> <![endif]>D

<![if ! IE]> <![endif]>- I

100

20 µs Pulse Width

TC = 25 °C

10-1

100

101

91093_01

- VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

102

Top

VGS

- 15 V

- 10 V

<![if ! IE]> <![endif]>(A)

- 8.0 V

- 7.0 V

<![if ! IE]> <![endif]>Current

- 6.0 V

101

- 5.5 V

- 5.0 V

<![if ! IE]> <![endif]>Drain,

Bottom - 4.5 V

- 4.5 V

<![if ! IE]> <![endif]>D

<![if ! IE]> <![endif]>- I

100

20 µs Pulse Width

TC = 175 °C

10-1

100

101

91093_02

- VDS, Drain-to-Source Voltage (V)

<![if ! IE]> <![endif]>(A)
					25 °C
<![if ! IE]> <![endif]>CurrentDrain,										175 °C
	101
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>- I
	100													20 µs Pulse Width
														VDS = - 25 V
	4		5		6				7					8		9		10
91093_03			- VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>Resistance	2.5
		ID	= - 18 A
<![if ! IE]> <![endif]>Source-to-DrainOn (Normalized)	2.0	VGS = - 10 V
	1.5
	1.0
<![if ! IE]> <![endif]>,	0.5
<![if ! IE]> <![endif]>DS(on)	0.0
<![if ! IE]> <![endif]>R
	- 60 - 4020 0 20 40 60 80 100 120 140 160 180
91093_04				TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91093	www.vishay.com
S11-1052-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000