VISHAY SL02, SL03, SL04 Technical data

SL02 / 03 / 04

Vishay Semiconductors

Small Signal Schottky Diodes

Features

• For surface mounted applications

• Low-profile package e3

• Ideal for automated placement

• Low power loss, high efficiency

17249

• High temperature soldering: 260 °C/10 seconds at terminals

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Mechanical Data

Case: JEDEC DO-219AB (SMF) Plastic case

Polarity: Color band denotes cathode end

Weight: approx. 15 mg

Packaging codes-options:

G18 / 10 k per 13" reel (8 mm tape), 50 k/box

G08 / 3 k per 7" reel (8 mm tape), 30 k/box

Parts Table

Part	Ordering code	Marking	Remarks
SL02	SL02-GS18 or SL02-GS08	S2	Tape and Reel
SL03	SL03-GS18 or SL03-GS08	S3	Tape and Reel
SL04	SL04-GS18 or SL04-GS08	S4	Tape and Reel

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Part	Symbol	Value	Unit
Maximum repetitive peak		SL02	VRRM	20	V
reverse voltage
		SL03	VRRM	30	V
		SL04	VRRM	40	V
Maximum RMS voltage		SL02	VRMS	14	V
		SL03	VRMS	21	V
		SL04	VRMS	28	V

Document Number 85687	www.vishay.com
Rev. 1.6, 13-Apr-05	1

SL02 / 03 / 04

Vishay Semiconductors

Parameter	Test condition	Part	Symbol	Value	Unit
Maximum DC blocking voltage		SL02	VDC	20	V
		SL03	VDC	30	V
		SL04	VDC	40	V
Maximum average forward	Ttp = 109 °C		IF(AV)	1.1	A
rectified current
Peak forward surge current			IFSM	40	A
8.3 ms single half sine-wave

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Symbol	Value	Unit
Thermal resistance junction to		RthJA	180	K/W
ambient air2)
Maximum operating junction		TJ	125	°C
temperature
Storage temperature range		TSTG	- 55 to 150	°C

2)Mounted on epoxy substrate with 3 x 3 mm Cu pads (≥ 40 μm thick)

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Part	Symbol	Min	Typ.	Max	Unit
Instaneous forward voltage at		SL02	VF		0.360	0.385	V
0.51)
		SL03	VF		0.395	0.43	V
		SL04	VF		0.450	0.51	V
Typical instantaneous forward	1.1 A	SL02	VF		0.420		V
voltage
		SL03	VF		0.450		V
		SL04	VF		0.530		V
Maximum DC reverse current at	TA = 25 °C	SL02	IR			250	μA
rated DC blocking voltage
	TA = 100 °C	SL02	IR			8.0	mA
	TA = 25 °C	SL03	IR			130	μA
	TA = 100 °C	SL03	IR			6.0	mA
	TA = 25 °C	SL04	IR			20	μA
	TA = 100 °C	SL04	IR			6.0	mA
1) Pulse test: 300 μs pulse width, 1 % duty cycle

www.vishay.com	Document Number 85687
2	Rev. 1.6, 13-Apr-05

SL02 / 03 / 04

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

	1.5
(A)
Forward Current	1.0
	0.5
Average
	0
17379	0	10	30	50	70	90	110	130	150
				Lead temperature (°C)

Figure 1. Forward Current Derating Curve

250

(pF)	200
Capacitance	150
Junction	100
						SL02
	50
						SL04
	10
	0		2	4	6	8	10	12

17380

Reverse Voltage (V)

Figure 2. Typical Junction Capacitance

	10000		TJ = 100°C
(μA)
			TJ = 75°C
Current	1000
			TJ = 50°C
Reverse	100		TJ = 25°C
Instantaneous	10
	1
	0	5	10	15	20	25
17382			Reverse Voltage (V)

Figure 4. Typical Reverse Current Characteristics - SL02

(A)	10
Current	1	TJ = 100°C
					TJ = 75°C
Forward
	0.1
					TJ	= 50°C
Instantaneous
	0.01
					TJ = 25°C
	0.001
							Pulse Width = 300μs
0.0001							1% Duty Cycle
	0	0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1.0

17383

Instantaneous Forward Voltage (V)

Figure 5. Typical Instantaneous Forward Characteristics - SL03

CurrentForwardInstantaneous(A)	10										10000
	1	TJ = 100°C					1% Duty Cycle				(CurrentReverseInstantaneousμ A)
											1000
					TJ = 75°C
	0.1										100
					TJ = 50°C
	0.01										10
					TJ = 25°C
	0.001										1
							Pulse Width = 300μs
0.0001		0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	0.1
	0										1.0
17381			Instantaneous Forward Voltage (V)								17384

TJ = 100°C

TJ = 75°C

TJ = 50°C

TJ = 25°C

0

5

10

15

20

25

30

35

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characterisics - SL02

Figure 6. Typical Reverse Current Characteristics - SL03

Document Number 85687	www.vishay.com
Rev. 1.6, 13-Apr-05	3