Vishay IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Data Sheet

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	- 60
RDS(on) ( )	VGS = - 10 V		0.28
Qg (Max.) (nC)	19
Qgs (nC)	5.4
Qgd (nC)	11
Configuration	Single

S

	I2PAK (TO-262)		D2PAK (TO-263)
			G
			G
		D S	D
	G		S
			D
			P-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Advanced Process Technology

• Surface Mount (IRF9Z24S, SiHF9Z24S)

• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)

• 175 °C Operating Temperature

•Fast Switching

•P-Channel

•Fully Avalanche Rated

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

The through-hole version (IR9Z24L, SiH9Z24L) is available for low-profile applications.

ORDERING INFORMATION

Package

D2PAK (TO-263)

D2PAK (TO-263)

D2PAK (TO-263)

I2PAK (TO-262)

Lead (Pb)-free and Halogen-free

SiHF9Z24S-GE3

SiHF9Z24STRL-GE3a

SiHF9Z24STRR-GE3a

-

Lead (Pb)-free

IRF9Z24SPbF

IRF9Z24STRLPbFa

IRF9Z24STRRPbFa

IRF9Z24LPbF

SiHF9Z24S-E3

SiHF9Z24STL-E3a

SiHF9Z24STR-E3a

SiHF9Z24L-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

- 60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Currente

VGS at - 10 V

TC = 25 °C

ID

- 11

TC = 100 °C

- 7.7

A

Pulsed Drain Currenta, e

IDM

- 44

Linear Derating Factor

0.40

W/°C

Single Pulse Avalanche Energyb, e

EAS

240

mJ

Repetitive Avalanche Currenta

IAR

- 11

A

Repetitive Avalanche Energya

EAR

6.0

mJ

Maximum Power Dissipation

TA = 25 °C

PD

3.7

W

TC = 25 °C

60

W

Peak Diode Recovery dV/dtc, e

dV/dt

- 4.5

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = - 25 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = - 11 A (see fig. 12).

c. ISD - 11 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.

d. 1.6 mm from case.

e. Uses IRF9Z24, SiHF9Z24 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91091

www.vishay.com

S11-1063-Rev. C, 30-May-11

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	MIN.	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	-	40
(PCB Mount)a					°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	-	2.5

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS			MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0, ID = - 250 μA			- 60	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = - 1 mAc			-	- 0.056	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = - 250 μA			- 2.0	-	- 4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V		-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = - 60 V, VGS = 0 V			-	-	- 100	μA
			VDS = - 48 V, VGS = 0 V, TJ = 150 °C			-	-	- 500
Drain-Source On-State Resistance		RDS(on)	VGS = - 10 V		ID = - 6.6 Ab	-	-	0.28
Forward Transconductance		gfs	VDS = - 25 V, ID = - 6.6 Ac			1.4	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,	-	570	-
Output Capacitance		Coss							pF
				VDS = - 25 V,		-	360	-
			f = 1.0 MHz, see fig. 5c
Reverse Transfer Capacitance		Crss				-	65	-
Total Gate Charge		Qg			ID = - 11 A, VDS = - 48 V,	-	-	19
Gate-Source Charge		Qgs	VGS = - 10 V			-	-	5.4	nC
					see fig. 6 and 13b, c
Gate-Drain Charge		Qgd				-	-	11
Turn-On Delay Time		td(on)				-	13	-
Rise Time		tr	VDD = - 30 V, ID = - 11 A,			-	68	-	ns
Turn-Off Delay Time		td(off)	Rg = 18 , RD = 2.5 , see fig. 10b			-	15	-
Fall Time		tf				-	29	-
Drain-Source Body Diode Characteristics

	Continuous Source-Drain Diode Current	IS	MOSFET symbol	D	-	-	- 11
			showing the
							A
			integral reverse	G
	Pulsed Diode Forward Currenta	ISM			-	-	- 44
			p - n junction diode	S

Body Diode Voltage		VSD	TJ = 25 °C, IS = - 11 A, VGS = 0 Vb	-	-	- 6.3	V
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μsb, c	-	100	200	ns
Body Diode Reverse Recovery Charge		Qrr		-	320	640	nC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Uses IRF9Z24, SiHF9Z24 data and test conditions.

www.vishay.com	Document Number: 91091
2	S11-1063-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Top

VGS

- 15 V

- 10 V

<![if ! IE]> <![endif]>(A)

- 8.0 V

- 7.0 V

<![if ! IE]> <![endif]>CurrentDrain,

101

- 6.0 V

- 4.5 V

100

- 5.5 V

- 5.0 V

<![if ! IE]> <![endif]>D

Bottom - 4.5 V

<![if ! IE]> <![endif]>- I

20 µs Pulse Width

TC = 25 °C

10-1

100

101

91091_01

- VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

Top

VGS

- 15 V

- 10 V

<![if ! IE]> <![endif]>(A)

- 8.0 V

101

- 7.0 V

<![if ! IE]> <![endif]>Current

- 6.0 V

- 5.5 V

- 5.0 V

<![if ! IE]> <![endif]>Drain,

Bottom - 4.5 V

100

- 4.5 V

<![if ! IE]> <![endif]>D

<![if ! IE]> <![endif]>- I

20 µs Pulse Width

TC = 175 °C

10-1

100

101

91091_02

- VDS, Drain-to-Source Voltage (V)

<![if ! IE]> <![endif]>Current (A)	101				25 °C
										175 °C
<![if ! IE]> <![endif]>, Drain	100
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>- I
												20 µs Pulse Width
												VDS = - 25 V
	4		5		6			7		8					9		10
91091_03			- VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>Resistance	3.0
		ID = - 11 A
<![if ! IE]> <![endif]>Source-to-DrainOn (Normalized)	2.5	VGS = - 10 V
	2.0
	1.5
	1.0
<![if ! IE]> <![endif]>,	0.5
<![if ! IE]> <![endif]>DS(on)	0.0
<![if ! IE]> <![endif]>R
	- 60 - 40 - 20 0 20 40 60 80 100 120140 160 180
91091_04			TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics	Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91091	www.vishay.com
S11-1063-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000