VISHAY BAV200, BAV201, BAV202, BAV203 User Manual

BAV200/BAV201/BAV202/BAV203

Vishay Semiconductors

Small Signal Switching Diodes, High Voltage

Features

• Silicon epitaxial planar diodes

• Lead (Pb)-free component

e2

• Component in accordance to RoHS 2002/ 95/EC and WEEE 2002/96/EC

9612009

Applications

• General purposes

Mechanical Data

Case: Quadro MELF glass case (SOD80)

Weight: approx. 34 mg

Cathode band color: black

Packaging codes/options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box

GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box

Parts Table

Part	Type differentiation	Ordering code	Type marking	Remarks
BAV200	VRRM = 60 V	BAV200-GS18 or BAV200-GS08	-	Tape and reel
BAV201	VRRM = 120 V	BAV201-GS18 or BAV201-GS08	-	Tape and reel
BAV202	VRRM = 200 V	BAV202-GS18 or BAV202-GS08	-	Tape and reel
BAV203	VRRM = 250 V	BAV203-GS18 or BAV203-GS08	-	Tape and reel

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Part	Symbol	Value	Unit
		BAV200	VRRM	60	V
Peak reverse voltage		BAV201	VRRM	120	V
		BAV202	VRRM	200	V
		BAV203	VRRM	250	V
		BAV200	VR	50	V
Reverse voltage		BAV201	VR	100	V
		BAV202	VR	150	V
		BAV203	VR	200	V
Forward continuous current			IF	250	mA
Peak forward surge current	tp = 1 s, Tj = 25 °C		IFSM	1	A
Forward peak current	f = 50 Hz		IFM	625	mA
Power dissipation			Ptot	500	mW

Document Number 85544	For technical support, please contact: [e-mail]	www.vishay.com
Rev. 1.7, 25-Apr-08		1

BAV200/BAV201/BAV202/BAV203

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

	Parameter	Test condition	Symbol	Value	Unit
	Thermal resistance junction to ambient air	on PC board	RthJA	500	K/W
		50 mm x 50 mm x 1.6 mm
	Junction temperature		Tj	175	°C
	Storage temperature range		Tstg	- 65 to + 175	°C

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Part	Symbol	Min.	Typ.	Max.	Unit
Forward voltage	IF = 100 mA		VF			1000	mV
	VR = 50 V	BAV200	IR			100	nA
	VR = 100 V	BAV201	IR			100	nA
	VR = 150 V	BAV202	IR			100	nA
Reverse current	VR = 200 V	BAV203	IR			100	nA
	Tj = 100 °C, VR = 50 V	BAV200	IR			15	μA
	Tj = 100 °C, VR = 100 V	BAV201	IR			15	μA
	Tj = 100 °C, VR = 150 V	BAV202	IR			15	μA
	Tj = 100 °C, VR = 200 V	BAV203	IR			15	μA
		BAV200	V(BR)	60			V
Breakdown voltage	IR = 100 μA, tp/T = 0.01,	BAV201	V(BR)	120			V
	tp = 0.3 ms	BAV202	V(BR)	200			V
		BAV203	V(BR)	250			V
Diode capacitance	VR = 0, f = 1 MHz		CD		1.5		pF
Differential forward resistance	IF = 10 mA		rf		5		Ω
Reverse recovery time	IF = IR = 30 mA, iR = 3 mA,		trr			50	ns
	RL = 100 Ω

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

	1000
(µA)	100
rrentuC	10
ersevRe
	1
-	0.1
R
I
	0.01
	0
94 9084

						1000
					(mA)	100	Tj	= 25 °C
Scattering Limit					uCrrent
										Scattering Limit
					- Forward	10
			VR = VRRM			1
					F
					I
						0.1
40	80	120	160	200		0		0.4	0.8	1.2	1.6	2.0
Tj - Junction Temperature (°C)						94 9085		VF - Forward Voltage (V)

Figure 1. Reverse Current vs. Junction Temperature

Figure 2. Forward Current vs. Forward Voltage

www.vishay.com	For technical support, please contact: [e-mail]	Document Number 85544
2		Rev. 1.7, 25-Apr-08