TSDF1250
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Silicon NPN Planar RF Transistor
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Electrostatic sensitive device. |
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Observe precautions for handling. |
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Applications |
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For low noise applicatins such as power amplifiers, |
frequencies. |
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mixers and oscillators in analogue and digital TV±sys- |
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tems (e.g. satellite tuners) up to microwave |
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Features |
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D Low power applications |
D High transition frequency fT = 12 GHz |
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D Very low noise figure |
D Excellent large signal behaviour |
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2 |
1 |
1 |
2 |
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94 9279 |
13 579 |
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94 9278 |
95 10831 |
3 |
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4 |
4 |
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3 |
TSDF1250 Marking: F50 |
TSDF1250R Marking: 50F |
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Plastic case (SOT 143) |
Plastic case (SOT 143R) |
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1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter |
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter |
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2 |
1 |
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1 |
2 |
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13 653 |
13 566 |
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13 654 |
13 566 |
3 |
4 |
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4 |
3 |
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TSDF1250W Marking: WF5 |
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TSDF1250RW Marking: W5F |
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Plastic case (SOT 343) |
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Plastic case (SOT 343R) |
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1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter |
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter |
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Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter |
Test Conditions |
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Symbol |
Value |
Unit |
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Collector-base voltage |
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VCBO |
9 |
V |
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Collector-emitter voltage |
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VCEO |
6 |
V |
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Emitter-base voltage |
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VEBO |
2 |
V |
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Collector current |
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IC |
60 |
mA |
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Total power dissipation |
Tamb ≤ 60 °C |
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Ptot |
200 |
mW |
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Junction temperature |
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Tj |
150 |
°C |
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Storage temperature range |
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Tstg |
±65 to +150 |
°C |
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Document Number 85067 |
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www.vishay.de •FaxBack +1-408-970-5600 |
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Rev. 5, 08-Jul-99 |
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1 (6) |
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TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Junction ambient |
on glass fibre printed board (25 x 20 x 1.5) mm3 |
R |
450 |
K/W |
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plated with 35mm Cu |
thJA |
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Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter |
Test Conditions |
Symbol |
Min |
Typ |
Max |
Unit |
Collector cut-off current |
VCE = 12 V, VBE = 0 |
ICES |
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100 |
mA |
Collector-base cut-off current |
VCB = 10 V, IE = 0 |
ICBO |
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100 |
nA |
Emitter-base cut-off current |
VEB = 1 V, IC = 0 |
IEBO |
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2 |
mA |
Collector-emitter breakdown voltage |
IC = 1 mA, IB = 0 |
V(BR)CEO |
6 |
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V |
Collector-emitter saturation voltage |
IC = 50 mA, IB = 5 mA |
VCEsat |
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0.1 |
0.5 |
V |
DC forward current transfer ratio |
VCE = 5 V, IC = 40 mA |
hFE |
50 |
100 |
150 |
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Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter |
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Test Conditions |
Symbol |
Min |
Typ |
Max |
Unit |
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Transition frequency |
VCE = 5 |
V, IC = |
40 mA, f = 1 GHz |
fT |
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12 |
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GHz |
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Collector-base capacitance |
VCB = 1 |
V, f = 1 MHz |
Ccb |
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0.6 |
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pF |
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Collector-emitter capacitance |
VCE = 1 |
V, f = 1 MHz |
Cce |
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0.3 |
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pF |
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Emitter-base capacitance |
VEB = 0.5 V, f = 1 MHz |
Ceb |
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0.7 |
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pF |
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Noise figure |
VCE = 5 |
V, IC = |
5 mA, |
F |
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1.2 |
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dB |
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ZS = ZSopt, ZL = 50 W, f = 2 GHz |
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Power gain |
VCE = 5 |
V, IC = |
5 mA, |
Gpe |
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11 |
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dB |
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f = 2 GHz (@Fopt) |
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VCE = 5 |
V, IC = |
40 mA, |
Gpe |
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13.5 |
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dB |
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ZS = ZSopt, ZL = 50 W, f = 2 GHz |
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Transducer gain |
V = 5 |
V, I |
C |
= |
40 mA, |
S 2 |
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12.5 |
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dB |
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CE |
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21e |
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Z0 = 50 W, f = 2 GHz |
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Third order intercept point at |
VCE = 5 |
V, IC = |
40 mA, f = 2 GHz |
IP3 |
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28 |
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dBm |
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output |
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www.vishay.de •FaxBack +1-408-970-5600 |
Document Number 85067 |
2 (6) |
Rev. 5, 08-Jul-99 |
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