Vishay IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 Data Sheet

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)		- 60
RDS(on) ( )		VGS = - 10 V	0.28
Qg (Max.) (nC)		19
Qgs (nC)		5.4
Qgd (nC)		11
Configuration		Single
			S
DPAK	IPAK
(TO-252)	(TO-251)	G
	D
D
S		D S
G

G

D

P-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR9024, SiHFR9024)

• Straight Lead (IRFU9024, SiHFU9024)

• Available in Tape and Reel

•P-Channel

•Fast Switching

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

ORDERING INFORMATION

	Package	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	IPAK (TO-251)
	Lead (Pb)-free and	SiHFR9024-GE3	SiHFR9024TR-GE3a	SiHFR9024TRL-GE3a	SiHFR9024TRR-GE3a	SiHFU9024-GE3
	Halogen-free
	Lead (Pb)-free	IRFR9024PbF	IRFR9024TRPbFa	IRFR9024TRLPbFa	IRFR9024TRRPbFa	IRFU9024PbF
		SiHFR9024-E3	SiHFR9024T-E3a	SiHFR9024TL-E3a	SiHFR9024TR-E3a	SiHFU9024-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	- 60	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at - 10 V	TC = 25 °C	ID	- 8.8
			TC = 100 °C		- 5.6	A
Pulsed Drain Currenta				IDM	- 35
Linear Derating Factor					0.33	W/°C
Linear Derating Factor (PCB Mount)e					0.020
Single Pulse Avalanche Energyb				EAS	300	mJ
Repetitive Avalanche Currenta				IAR	- 8.8	A
Repetitive Avalanche Energya				EAR	5.0	mJ
Maximum Power Dissipation		TC = 25 °C		PD	42	W
Maximum Power Dissipation (PCB Mount)e		TA = 25 °C			2.5
Peak Diode Recovery dV/dtc				dV/dt	- 4.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)d		for 10 s			260

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = - 25 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 , IAS = - 8.8 A (see fig. 12).

c.ISD - 11 A, dI/dt 140 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0168-Rev. D, 04-Feb-13	1	Document Number: 91278
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024

www.vishay.com					Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	MIN.	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient	RthJA	-	-	110
Maximum Junction-to-Ambient	RthJA	-	-	50		°C/W
(PCB Mount)a
Maximum Junction-to-Case (Drain)	RthJC	-	-	3.0

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									- 60	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	- 0.063	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									- 2.0	-	- 4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = - 60 V, VGS = 0 V									-	-	- 100	μA
			VDS = - 48 V, VGS = 0 V, TJ = 125 °C									-	-	- 500
Drain-Source On-State Resistance		RDS(on)	VGS = - 10 V		ID = - 5.3 Ab							-	-	0.28
Forward Transconductance		gfs	VDS = - 25 V, ID = - 5.3 A									2.9	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,							-	570	-
Output Capacitance		Coss		VDS = - 25 V,								-	360	-	pF
					f = 1.0 MHz
Reverse Transfer Capacitance		Crss										-	65	-
Total Gate Charge		Qg			ID = - 11 A, VDS = - 48 V,							-	-	19
Gate-Source Charge		Qgs	VGS = - 10 V									-	-	5.4	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd										-	-	11
Turn-On Delay Time		td(on)										-	13	-
Rise Time		tr	VDD = - 30 V, ID = - 11 A,									-	68	-	ns
Turn-Off Delay Time		td(off)	Rg = 18 , RD = 2.5 , see fig. 10b									-	15	-
Fall Time		tf										-	29	-
Internal Drain Inductance		LD	Between lead,							D		-	4.5	-
			6 mm (0.25") from												nH
			package and center of			G
Internal Source Inductance		LS	die contact							S		-	7.5	-
Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current	IS	MOSFET symbol	D	-	-	- 8.8
		showing the
						A
		integral reverse	G
Pulsed Diode Forward Currenta	I	p - n junction diode	S	-	-	- 35
	SM

	Body Diode Voltage	VSD	TJ = 25 °C, IS = -	8.8 A, VGS = 0 Vb	-	-	- 6.3	V
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = - 11	A, dI/dt = 100 A/μsb	-	100	200	ns
	Body Diode Reverse Recovery Charge	Qrr			-	0.32	0.64	μC
	Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S13-0168-Rev. D, 04-Feb-13	2	Document Number: 91278
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

		Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 -Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S13-0168-Rev. D, 04-Feb-13	3	Document Number: 91278
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024

www.vishay.com	Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

S13-0168-Rev. D, 04-Feb-13	4	Document Number: 91278
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000