IRFR024, IRFU024, SiHFR024, SiHFU024
www.vishay.com |
Vishay Siliconix |
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Power MOSFET |
PRODUCT SUMMARY
VDS (V) |
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60 |
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RDS(on) ( ) |
VGS = 10 V |
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0.10 |
Qg (Max.) (nC) |
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25 |
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Qgs (nC) |
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5.8 |
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Qgd (nC) |
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11 |
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Configuration |
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Single |
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D
DPAK |
IPAK |
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(TO-252) |
(TO-251) |
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D |
D |
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G |
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G |
S |
D |
S |
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G |
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S |
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N-Channel MOSFET |
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRFR024, SiHFR024)
• Straight Lead (IRFU024, SiHFU024)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
•Simple Drive Requirements
•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package |
DPAK (TO-252) |
DPAK (TO-252) |
DPAK (TO-252) |
IPAK (TO-251) |
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Lead (Pb)-free and Halogen-free |
SiHFR024-GE3 |
SiHFR024TR-GE3 |
SiHFR024TRL-GE3 |
SiHFU024-GE3 |
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Lead (Pb)-free |
IRFR024PbF |
IRFR024TRPbFa |
- |
IRFU024PbF |
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SiHFR024-E3 |
SiHFR024T-E3a |
- |
SiHFU024-E3 |
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Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
60 |
V |
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Gate-Source Voltage |
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VGS |
± 20 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
ID |
14 |
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TC = 100 °C |
9.0 |
A |
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Pulsed Drain Currenta |
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IDM |
56 |
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Linear Derating Factor |
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0.33 |
W/°C |
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Linear Derating Factor (PCB Mount)e |
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0.020 |
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Single Pulse Avalanche Energyb |
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EAS |
91 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
42 |
W |
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Maximum Power Dissipation (PCB Mount)e |
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TA = 25 °C |
2.5 |
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Peak Diode Recovery dV/dtc |
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dV/dt |
5.5 |
V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
°C |
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Soldering Recommendations (Peak Temperature)d |
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for 10 s |
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260 |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 , IAS = 14 A (see fig. 12).
c.ISD 17 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C.
d.1.6 mm from case.
e.When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0170-Rev. D, 04-Feb-13 |
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Document Number: 91264 |
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For technical questions, contact: hvm@vishay.com |
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR024, IRFU024, SiHFR024, SiHFU024
www.vishay.com |
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Vishay Siliconix |
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THERMAL RESISTANCE RATINGS |
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PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
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UNIT |
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Maximum Junction-to-Ambient |
RthJA |
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110 |
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Maximum Junction-to-Ambient |
RthJA |
- |
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50 |
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°C/W |
(PCB Mount)a |
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Maximum Junction-to-Case (Drain) |
RthJC |
- |
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3.0 |
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Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0 V, ID = 250 μA |
60 |
- |
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V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
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0.073 |
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V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 μA |
2.0 |
- |
4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 20 V |
- |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 60 V, VGS = 0 V |
- |
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25 |
μA |
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VDS = 48 V, VGS = 0 V, TJ = 125 °C |
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250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 8.4 Ab |
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0.10 |
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Forward Transconductance |
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gfs |
VDS = 25 V, ID = 8.4 Ab |
6.2 |
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S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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640 |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
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360 |
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pF |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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79 |
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Total Gate Charge |
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Qg |
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ID = 17 A, VDS = 48 V, |
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25 |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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- |
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5.8 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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11 |
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Turn-On Delay Time |
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td(on) |
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13 |
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Rise Time |
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tr |
VDD = 30 V, ID = 17A, |
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58 |
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ns |
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Turn-Off Delay Time |
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td(off) |
RG = 18 , RD = 1.7 , see fig. 10b |
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25 |
- |
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Fall Time |
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tf |
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42 |
- |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
- |
4.5 |
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6 mm (0.25") from |
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Internal Source Inductance |
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LS |
package and center of |
G |
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- |
7.5 |
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nH |
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die contact |
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S |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
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14 |
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showing the |
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A |
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integral reverse |
G |
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Pulsed Diode Forward Currenta |
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I |
p - n junction diode |
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- |
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56 |
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SM |
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S |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 14 A, VGS = 0 Vb |
- |
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1.5 |
V |
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Body Diode Reverse Recovery Time |
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trr |
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb |
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88 |
180 |
ns |
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Body Diode Reverse Recovery Charge |
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Qrr |
- |
0.29 |
0.64 |
μC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
S13-0170-Rev. D, 04-Feb-13 |
2 |
Document Number: 91264 |
|
For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR024, IRFU024, SiHFR024, SiHFU024
www.vishay.com |
Vishay Siliconix |
|
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C |
Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
S13-0170-Rev. D, 04-Feb-13 |
3 |
Document Number: 91264 |
|
For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR024, IRFU024, SiHFR024, SiHFU024
www.vishay.com |
Vishay Siliconix |
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage |
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Fig. 7 - Typical Source-Drain Diode Forward Voltage |
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Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage |
Fig. 8 - Maximum Safe Operating Area |
S13-0170-Rev. D, 04-Feb-13 |
4 |
Document Number: 91264 |
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For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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