Vishay IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Data Sheet

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)	- 50
RDS(on) ( )	VGS = - 10 V		0.28
Qg (Max.) (nC)	14
Qgs (nC)	6.5
Qgd (nC)	6.5
Configuration	Single

S

FEATURES

• Surface Mountable (Order As IRFR9020,

SiHFR9020)

• Straight Lead Option (Order As IRFU9020,

SiHFU9020)

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

• Simple Drive Requirements

•Ease of Paralleling

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

	DPAK	IPAK
	(TO-252)	(TO-251)		G
		D
	D
	G	S	D	S
		G

D

P-Channel MOSFET

DESCRIPTION

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt.

The power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of power MOSFET’s to high volume applications where PC board surface mounting is desirable. The surface mount option IRFR9020, SiHFR9020 is provided on 16mm tape. The straight lead option IRFU9020, SiHFU9020 of the device is called the IPAK (TO-251).

They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products.

ORDERING INFORMATION

	Package	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	IPAK (TO-251)
	Lead (Pb)-free and Halogen-free	SiHFR9020-GE3	SiHFR9020TR-GE3a	SiHFR9020TRL-GE3a	SiHFU9020-GE3
	Lead (Pb)-free	IRFR9020PbF	IRFR9020TRPbFa	IRFR9020TRLPbFa	IRFU9020PbF
		SiHFR9020-E3	SiHFR9020T-E3a	SiHFR9020TL-E3a	SiHFU9020-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	- 50	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at - 10 V	TC = 25 °C	ID	- 9.9
			TC = 100 °C		- 6.3	A
Pulsed Drain Currenta				IDM	- 40
Linear Derating Factor					0.33	W/°C
Single Pulse Avalanche Energyb				EAS	250	mJ
Repetitive Avalanche Currenta				IAR	- 9.9	A
Repetitive Avalanche Energya				EAR	4.2	mJ
Maximum Power Dissipation		TC = 25 °C		PD	42	W
Peak Diode Recovery dV/dtc				dV/dt	5.8	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)d		for 10 s			300

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).

b.VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, Rg = 25 , Peak IL = - 9.9 A

c.ISD - 9.9 A, dI/dt -120 A/μs, VDD 40 V, TJ 150 °C.

d.0.063" (1.6 mm) from case.

e.When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0169-Rev. D, 04-Feb-13	1	Document Number: 90350
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

www.vishay.com					Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	MIN.	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient	RthJA	-	-	110
Case-to-Sink	RthCS	-	1.7	-		°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	-	3.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

	PARAMETER	SYMBOL	TEST CONDITIONS			MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 μA			- 50	-	-	V
	Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = - 250 μA			- 2.0	-	- 4.0	V
	Gate-Source Leakage	IGSS		VGS = ± 20 V		-	-	± 500	nA
	Zero Gate Voltage Drain Current	IDSS	VDS = max. rating, VGS = 0 V			-	-	250	μA
			VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C			-	-	1000
	Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V	ID = 5.7 Ab		-	0.20	0.28
	Forward Transconductance	gfs	VDS - 50 V, IDS = - 5.7 A			2.3	3.5	-	S
	Dynamic
	Input Capacitance	Ciss		VGS = 0 V,		-	490	-
	Output Capacitance	Coss		VDS = - 25 V,		-	320	-	pF
	Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 9			-	70	-
	Total Gate Charge	Qg		ID = - 9.7 A, VDS = 0.8 x max.		-	9.4	14
	Gate-Source Charge	Qgs	VGS = - 10 V	rating, see fig. 18		-	4.3	6.5	nC
				(Independent operating
	Gate-Drain Charge	Qgd				-	4.3	6.5
				temperature)
	Turn-On Delay Time	td(on)	VDD = - 25 V, ID = - 9.7 A,			-	8.2	12
	Rise Time	tr				-	57	66
			Rg = 18 , RD = 2.4 , see fig. 17						ns
	Turn-Off Delay Time	td(off)				-	12	18
			(Independent operating temperature)
	Fall Time	tf	Between lead,			-	25	38
	Internal Drain Inductance	LD			D	-	4.5	-
			6 mm (0.25") from						nH
	Internal Source Inductance	LS	package and center of		G	-	7.5	-
			die contact.
					S
	Drain-Source Body Diode Characteristics
	Continuous Source-Drain Diode Current	IS	MOSFET symbol		D	-	-	- 9.9
			showing the						A
	Pulsed Diode Forward Currenta	ISM	integral reverse		G	-	-	- 40
			p - n junction diode		S

	Body Diode Voltage	VSD	TJ = 25 °C, IS = - 9.9 A, VGS = 0	Vb	-	-	- 6.3	V
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = - 9,7 A, dI/dt = 100	A/μsb	56	110	280	ns
	Body Diode Reverse Recovery Charge	Qrr			0.17	0.34	0.85	nC
	Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).

b.Pulse width 300 μs; duty cycle 2 %.

S13-0169-Rev. D, 04-Feb-13	2	Document Number: 90350
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics		Fig. 4 - Maximum Safe Operating Area

Fig. 2 - Typical Transfer Characteristics	Fig. 5 - Typical Transconductance vs. Drain Current

Fig. 3 - Typical Saturation Characteristics	Fig. 6 - Typical Source-Drain Diode Forward Voltage

S13-0169-Rev. D, 04-Feb-13	3	Document Number: 90350
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

www.vishay.com	Vishay Siliconix

Fig. 7 - Breakdown Voltage vs. Temperature				Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 8 - Normalized On-Resistance vs. Temperature

Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage

S13-0169-Rev. D, 04-Feb-13	4	Document Number: 90350
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000