Vishay IRFZ14, SiHFZ14 Data Sheet

IRFZ14, SiHFZ14

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		60
RDS(on) ( )	VGS = 10 V		0.20
Qg (Max.) (nC)		11
Qgs (nC)		3.1
Qgd (nC)		5.8
Configuration		Single

D

TO-220AB

G

S

D

G S

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• 175 °C Operating Temperature	Available

	• Fast Switching	RoHS*
		COMPLIANT

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

	Package	TO-220AB
	Lead (Pb)-free	IRFZ14PbF
		SiHFZ14-E3
	SnPb	IRFZ14
		SiHFZ14

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltagef				VDS	60	V
Gate-Source Voltagef				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	10
			TC = 100 °C		7.2	A
Pulsed Drain Currenta				IDM	40
Linear Derating Factor					0.29	W/°C
Single Pulse Avalanche Energyb				EAS	47	mJ
Maximum Power Dissipation		TC = 25 °C		PD	43	W
Peak Diode Recovery dV/dtc				dV/dt	4.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 175	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300d
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 25 V; starting TJ = 25 °C, L = 1.47 mH, Rg = 25 , IAS = 8 A (see fig. 12).

c.ISD 10 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91289	www.vishay.com
S11-0517-Rev. C, 21-Mar-11	1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ14, SiHFZ14

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	3.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA								60	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA								-	0.063	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA								2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V							-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 60 V, VGS = 0 V								-	-	25	μA
			VDS = 48 V, VGS = 0 V, TJ = 150 °C								-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 6.0 Ab					-	-	0.20
Forward Transconductance		gfs	VDS = 25 V, ID = 6.0 Ab								2.4	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,						-	300	-
Output Capacitance		Coss			VDS = 25 V,						-	160	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss									-	29	-
Total Gate Charge		Qg			ID = 10 A, VDS = 48 V,						-	-	11
Gate-Source Charge		Qgs	VGS = 10 V								-	-	3.1	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd									-	-	5.8
Turn-On Delay Time		td(on)									-	10	-
Rise Time		tr	VDD = 30 V, ID = 10 A,								-	50	-
			Rg = 24 , RD = 2.7 ,											ns
Turn-Off Delay Time		td(off)									-	13	-
					see fig. 10b
Fall Time		tf									-	19	-
Internal Drain Inductance		LD	Between lead,						D		-	4.5	-
			6 mm (0.25") from
			package and center of			G								nH
Internal Source Inductance		LS	die contact						S		-	7.5	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol							D	-	-	10
			showing the											A
Pulsed Diode Forward Currenta		ISM	integral reverse			G					-	-	40
			p - n junction diode							S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 10 A, VGS = 0 Vb								-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb								-	70	140	ns
Body Diode Reverse Recovery Charge		Qrr									-	0.20	0.40	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

www.vishay.com	Document Number: 91289
2	S11-0517-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ14, SiHFZ14

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	Fig. 1 - Typical Output Characteristics, TC = 25 °C		Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91289	www.vishay.com
S11-0517-Rev. C, 21-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000