Vishay IRF830S, SiHF830S, IRF830L, SiHF830L Data Sheet

IRF830S, SiHF830S, IRF830L, SiHF830L

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)				500
RDS(on) ( )			VGS = 10 V	1.5
Qg max. (nC)				38
Qgs (nC)				5.0
Qgd (nC)				22
Configuration			Single
				D
I2PAK (TO-262)		D2PAK (TO-263)
		G	G
	D S		D
G			S
				S
				N-Channel MOSFET

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

Available

• Repetitive avalanche rated

• Fast switching

Available

•Ease of paralleling

•Simple drive requirements

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package	D2PAK (TO-263)	D2PAK (TO-263)	I2PAK (TO-262)
Lead (Pb)-free and halogen-free	SiHF830S-GE3	SiHF830STRL-GE3 a	SiHF830L-GE3
Lead (Pb)-free	IRF830SPbF	IRF830STRLPbF a	IRF830LPbF

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	4.5
			TC = 100 °C		2.9	A
Pulsed Drain Current a				IDM	18
Linear Derating Factor					0.59	W/°C
Linear Derating Factor (PCB mount) e					0.025
Single Pulse Avalanche Energy b				EAS	280	mJ
Avalanche Current a				IAR	4.5	A
Repetitive Avalanche Energy a				EAR	7.4	mJ
Maximum Power Dissipation		TC = 25 °C		PD	74	W
Maximum Power Dissipation (PCB mount) e		TA = 25 °C			3.1
Peak Diode Recovery dV/dt c				dV/dt	3.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak temperature) d		for 10 s			300

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12).

c.ISD 4.5 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.When mounted on 1" square PCB (FR-4 or G-10 material).

S16-0754-Rev. E, 02-May-16	1	Document Number: 91064
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF830S, SiHF830S, IRF830L, SiHF830L

www.vishay.com				Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	62
Maximum Junction-to-Ambient	RthJA	-	40	°C/W
(PCB mount) a
Maximum Junction-to-Case (Drain)	RthJC	-	1.7

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0, ID = 250 μA									500	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	0.61	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 500 V, VGS = 0 V									-	-	25	μA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 2.7 Ab						-	-	1.5
Forward Transconductance		gfs	VDS = 50 V, ID = 2.7 Ab									2.5	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,							-	610	-
Output Capacitance		Coss			VDS = 25 V,							-	160	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss										-	68	-
Total Gate Charge		Qg			ID = 3.1 A, VDS = 400 V,							-	-	38
Gate-Source Charge		Qgs	VGS = 10 V									-	-	5.0	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd										-	-	22
Turn-On Delay Time		td(on)										-	8.2	-
Rise Time		tr	VDD	= 250 V, ID = 3.1 A,								-	16	-	ns
Turn-Off Delay Time		td(off)										-	42	-
			Rg = 12 , RD = 79			, see fig. 10b
Fall Time		tf										-	16	-
Internal Drain Inductance		LD	Between lead,							D		-	4.5	-
			6 mm (0.25") from
Internal Source Inductance		LS	package and center of			G						-	7.5	-	nH
			die contact
										S
Gate Input Resistance		Rg	f = 1 MHz, open drain									0.5	-	2.7
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	4.5
			showing the												A
Pulsed Diode Forward Currenta		ISM	integral reverse			G						-	-	18
			p - n junction diode								S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 4.5 A, VGS = 0 Vb									-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μsb									-	320	640	ns
Body Diode Reverse Recovery Charge		Qrr										-	1.0	2.0	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S16-0754-Rev. E, 02-May-16	2	Document Number: 91064
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF830S, SiHF830S, IRF830L, SiHF830L

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

101

Top

VGS

15 V

10 V

<![if ! IE]> <![endif]>(A)

8.0 V

7.0 V

<![if ! IE]> <![endif]>Current

6.0 V

5.5 V

5.0 V

<![if ! IE]> <![endif]>Drain

100

Bottom

4.5 V

4.5 V

<![if ! IE]> <![endif]>,

<![if ! IE]> <![endif]>D

<![if ! IE]> <![endif]>I

20 µs Pulse Width

10-1

TC = 25 °C

100

101

91064_01

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

101

Top

VGS

15 V

10 V

<![if ! IE]> <![endif]>(A)

8.0 V

7.0 V

<![if ! IE]> <![endif]>Current

6.0 V

5.5 V

4.5 V

5.0 V

100

Bottom

<![if ! IE]> <![endif]>, Drain

4.5 V

<![if ! IE]> <![endif]>D

<![if ! IE]> <![endif]>I

20 µs Pulse Width

10-1

TC = 150 °C

100

101

91064_02

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 °C

<![if ! IE]> <![endif]>Resistance	3.0
			ID = 3.1 A
<![if ! IE]> <![endif]>Source-to-DrainOn (Normalized)	2.5		VGS = 10 V
	2.0
	1.5
	1.0
<![if ! IE]> <![endif]>,	0.5
<![if ! IE]> <![endif]>DS(on)	0.0
<![if ! IE]> <![endif]>R
	- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91064_04				TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

1500

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted 1250 Crss = Cgd

Coss = Cds + Cgd

<![if ! IE]> <![endif]>(pF)	1000
<![if ! IE]> <![endif]>Capacitance
					Coss
	750				Ciss
	500
	250
	0				Crss
	100		101
91064_05			VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

<![if ! IE]>

<![endif]>ID, Drain Current (A)

101								20	ID = 3.1 A
							<![if ! IE]> <![endif]>(V)
	150 °C										VDS = 400 V
							<![if ! IE]> <![endif]>Voltage	16
										VDS = 250 V
100		25 °C					<![if ! IE]> <![endif]>Source-to	12	VDS = 100
								8
							<![if ! IE]> <![endif]>, Gate-	4
10-1				20 µs Pulse Width			<![if ! IE]> <![endif]>GS					For test circuit
				VDS = 50 V			<![if ! IE]> <![endif]>V
								0				see figure 13
4	5	6	7	8	9	10
								0	8	16	24	32	40

91064_03	VGS, Gate-to-Source Voltage (V)		91064_06	QG, Total Gate Charge (nC)
	Fig. 3 - Typical Transfer Characteristics		Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0754-Rev. E, 02-May-16		3		Document Number: 91064
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000