ON Semiconductor MJF122, MJF127 Service Manual

MJF122, MJF127

Complementary Power

Darlingtons

For Isolated Package Applications

Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

Features

•Electrically Similar to the Popular TIP122 and TIP127

•100 VCEO(sus)

•5.0 A Rated Collector Current

•No Isolating Washers Required

•Reduced System Cost

•High DC Current Gain − 2000 (Min) @ IC = 3 Adc

•UL Recognized, File #E69369, to 3500 VRMS Isolation

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Collector−Emitter Voltage	VCEO	100	Vdc
Collector−Base Voltage	VCB	100	Vdc
Emitter−Base Voltage	VEB	5	Vdc
RMS Isolation Voltage (Note 1)	VISOL	4500	VRMS
(t = 0.3 sec, R.H. ≤ 30%, TA = 25°C)
Per Figure 14
Collector Current − Continuous	IC	5	Adc
Peak		8
Base Current	IB	0.12	Adc
Total Power Dissipation (Note 2)	PD
@ TC = 25_C		30	W
Derate above 25_C		0.24	_
			W/ C
Total Power Dissipation @ TA = 25_C	PD	2	W
Derate above 25_C		0.016	_
			W/ C
Operating and Storage Junction Temperat-	TJ, Tstg	−65 to	IC
ure Range		+150

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction−to−Ambient	RqJA	62.5	_C/W
Thermal Resistance, Junction−to−Case	RqJC	4.1	_C/W
(Note 2)
Lead Temperature for Soldering Purpose	TL	260	_C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.Proper strike and creepage distance must be provided.

2.Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

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COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W

		NPN		PNP
		COLLECTOR 2		COLLECTOR 2
	BASE		BASE
	1		1
		EMITTER 3		EMITTER 3
		MJF122		MJF127
		MARKING
		DIAGRAM
				MJF12xG
		TO−220		AYWW
		CASE 221D−02
		STYLE 2
1	2 3	x	= 2 or 7
		G	= Pb−Free Package
		A	= Assembly Location
		Y	= Year
		WW	= Work Week
	ORDERING INFORMATION
	Device		Package	Shipping†
MJF122			TO−220	50 Units / Rail
MJF122G			TO−220	50 Units / Rail
		(Pb−Free)
MJF127			TO−220	50 Units / Rail
MJF127G			TO−220	50 Units / Rail
		(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

♥ Semiconductor Components Industries, LLC, 2008	1	Publication Order Number:
September, 2008 − Rev. 7		MJF122/D

MJF122, MJF127

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic		Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)		VCEO(sus)	100	−	Vdc
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current		ICEO	−	10	mAdc
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current		ICBO	−	10	mAdc
(VCB = 100 Vdc, IE = 0)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)		IEBO	−	2	mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc)		hFE	1000	−	−
DC Current Gain (IC = 3 Adc, VCE = 3 Vdc)			2000	−
Collector−Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc)		VCE(sat)	−	2	Vdc
Collector−Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc)			−	3.5
Base−Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc)		VBE(on)	−	2.5	Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)		hfe	4	−	−
Output Capacitance	MJF127	Cob	−	300	pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)	MJF122		−	200

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS			VCC
D1, MUST BE FAST RECOVERY TYPES, e.g.,
			- 30 V
Ç1N5825 USED ABOVE IB ≈ 100 mA	RC
ÇMSD6100 USED BELOW IB ≈ 100 mA			SCOPE
	TUT

V2		RB
APPROX.
+8 V
0	51	D1	Ń8 k	Ń120

V1

APPROX.

+ 4 V

-12 V

25 ms

tr, tf ≤ 10 ns

FOR td AND tr, D1 IS DISCONNECTED

DUTY CYCLE = 1%

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

	5
	3		ts
	2
(ÇÉs)μ	1					tf
	0.7
t, TIME	0.5
	0.3					t		td @ VBE(off) = 0 V
							r
	0.2
		VCC = 30 V
	0.1	IC/IB = 250			PNP
		IB1 = IB2
	0.07	°			NPN
	0.05	TJ = 25 C
	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMP)

Figure 1. Switching Times Test Circuit

Figure 2. Typical Switching Times

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				MJF122, MJF127
	TA	TC
	4	80
(WATTS)	3	60
DISSIPATION						TC
	2	40
, POWER	1	20				TA
D
P
		0		40	60	80	100	120	140	160
		0	20

T, TEMPERATURE (°C)

Figure 3. Maximum Power Derating

		1
	RESISTANCE (NORMALIZED)	0.5
r(t), TRANSIENT THERMAL		0.3
		0.2
		0.1					SINGLE PULSE
		0.05					RqJC(t) = r(t) RqJC
							TJ(pk) - TC		= P(pk)	RqJC(t)
		0.03
		0.02
		0.01				1	2		5													10K
		0.1	0.2	0.3	0.5			3		10	20	30	50	100	200	300	500	1K	2K	3K	5K

t, TIME (ms)

Figure 4. Thermal Response

	10
(AMPS)									100 ms
	5
	3	TJ = 150°C						1Éms
CURRENT
	2					d­	5 ms
						c
	1
COLLECTOR
	0.5		CURRENT LIMIT
			SECONDARY BREAKDOWN
	0.3
			LIMIT
,
C	0.2		THERMAL LIMIT @
I
			TC = 25°C (SINGLE PULSE)
	0.1	2	3	5	10	20	30	50	100
	1
		VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum Forward Bias

Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limitations imposed by secondary breakdown.

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