VSK.250, VSK.270, VSK.320 Series
Vishay Semiconductors
Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules)
MAGN-A-PAK
PRODUCT SUMMARY
IF(AV) |
250 A to 320 A |
Type |
Modules - Diode, High Voltage |
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FEATURES
• High voltage
• Electrically isolated base plate
• 3000 VRMS isolating voltage
•Industrial standard package
•Simplified mechanical designs, rapid assembly
•High surge capability
•Large creepage distances
•UL approved file E78996
•Compliant to RoHS directive 2002/95/EC
•Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAKs uses high voltage power diodes in two basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges and the single diode module can be used in conjunction with the thyristor modules as a freewheel diode. These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, etc.).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL |
CHARACTERISTICS |
VSK.250.. |
VSK.270.. |
VSK.320.. |
UNITS |
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IF(AV) |
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250 |
270 |
320 |
A |
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TC |
100 |
100 |
100 |
°C |
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IF(RMS) |
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393 |
424 |
502 |
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IFSM |
50 Hz |
7015 |
8920 |
10 110 |
A |
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60 Hz |
7345 |
9430 |
10 580 |
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I2t |
50 Hz |
246 |
398 |
511 |
kA2s |
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60 Hz |
225 |
363 |
466 |
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I2 t |
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2460 |
3980 |
5110 |
kA2 s |
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VRRM |
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400 to 3000 |
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V |
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TJ |
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- 40 to 150 |
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°C |
Document Number: 93581 |
For technical questions within your region, please contact one of the following: |
www.vishay.com |
Revision: 02-Jul-10 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
1 |
VSK.250, VSK.270, VSK.320 Series
Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
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VOLTAGE |
VRRM, MAXIMUM REPETITIVE |
VRSM, MAXIMUM NON-REPETITIVE |
IRRM MAXIMUM |
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TYPE NUMBER |
PEAK REVERSE VOLTAGE |
PEAK REVERSE VOLTAGE |
AT 150 °C |
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CODE |
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V |
V |
mA |
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04 |
400 |
500 |
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VSK.250 |
08 |
800 |
900 |
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VSK.270 |
12 |
1200 |
1300 |
50 |
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VSK.320 |
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16 |
1600 |
1700 |
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20 |
2000 |
2100 |
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VSK.270 |
30 |
3000 |
3100 |
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FORWARD CONDUCTION
PARAMETER |
SYMBOL |
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TEST CONDITIONS |
VSK.250 |
VSK.270 |
VSK.320 |
UNITS |
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Maximum average forward |
IF(AV) |
180° conduction, half sine wave |
250 |
270 |
320 |
A |
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current at case temperature |
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100 |
100 |
100 |
°C |
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Maximum RMS forward current |
IF(RMS) |
As AC switch |
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393 |
424 |
502 |
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Maximum peak, one-cycle |
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t = 10 ms |
No voltage |
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7015 |
8920 |
10 110 |
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t = 8.3 ms |
reapplied |
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7345 |
9340 |
10 580 |
A |
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forward, non-repetitive |
IFSM |
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t = 10 ms |
100 % VRRM |
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5900 |
7500 |
8500 |
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surge current |
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t = 8.3 ms |
reapplied |
Sinusoidal half wave, |
6180 |
7850 |
8900 |
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t = 10 ms |
No voltage |
initial TJ = TJ maximum |
246 |
398 |
511 |
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Maximum I2t for fusing |
I2t |
t = 8.3 ms |
reapplied |
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225 |
363 |
466 |
kA2s |
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t = 10 ms |
100 % VRRM |
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174 |
281 |
361 |
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t = 8.3 ms |
reapplied |
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159 |
257 |
330 |
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Maximum I2 t for fusing |
I2 t |
t = 0.1 ms to 10 ms, no voltage reapplied |
2460 |
3980 |
5110 |
kA2 s |
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Low level value of |
VF(TO)1 |
(16.7 % x x IF(AV) < I < x IF(AV)), |
0.79 |
0.74 |
0.69 |
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threshold voltage |
TJ = TJ maximum |
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V |
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High level value of |
VF(TO)2 |
(I > x IF(AV)), TJ = TJ maximum |
0.92 |
0.87 |
0.86 |
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threshold voltage |
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Low level forward |
rf1 |
(16.7 % x x IF(AV) < I < x IF(AV)), |
0.63 |
0.94 |
0.59 |
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slope resistance |
TJ = TJ maximum |
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m |
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High level forward |
rf2 |
(I > x IF(AV)), TJ = TJ maximum |
0.49 |
0.81 |
0.44 |
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slope resistance |
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Maximum forward voltage drop |
VFM |
IFM = x IF(AV), TJ = TJ maximum, 180° conduction |
1.29 |
1.48 |
1.28 |
V |
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Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 |
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BLOCKING
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum peak reverse |
IRRM |
TJ = 150 °C |
50 |
mA |
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leakage current |
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RMS insulation voltage |
VINS |
50 Hz, circuit to base, all terminals shorted, t = 1 s |
3000 |
V |
www.vishay.com |
For technical questions within your region, please contact one of the following: |
Document Number: 93581 |
2 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
Revision: 02-Jul-10 |
VSK.250, VSK.270, VSK.320 Series
Standard Recovery Diodes, 250 A to 320 A Vishay Semiconductors (MAGN-A-PAK Power Modules)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
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VALUES |
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UNITS |
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VSK.250 |
VSK.270 |
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VSK.320 |
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Maximum junction operating and storage |
TJ, TStg |
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- 40 to 150 |
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°C |
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temperature range |
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Maximum thermal resistance, |
RthJC |
DC operation |
0.16 |
0.125 |
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junction to case per junction |
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K/W |
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Maximum resistance, case to heatsink |
RthCS |
Mounting surface flat, smooth and |
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0.035 |
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per module |
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greased |
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MAP to heatsink |
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A mounting compound is recommended |
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4 to 6 |
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Mounting torque |
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and the torque should be rechecked |
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Nm |
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± 10 % |
busbar to MAP |
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after a period of about 3 hours to allow for |
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8 to 10 |
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the spread of the compound. |
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Approximate weight |
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800 |
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g |
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30 |
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oz. |
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Case style |
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MAGN-A-PAK |
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R CONDUCTION PER JUNCTION
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SINUSOIDAL CONDUCTION |
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RECTANGULAR CONDUCTION |
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DEVICE |
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AT TJ MAXIMUM |
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AT TJ MAXIMUM |
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UNITS |
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180° |
120° |
90° |
60° |
30° |
180° |
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120° |
90° |
60° |
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30° |
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VSK.250 |
0.009 |
0.010 |
0.014 |
0.020 |
0.032 |
0.007 |
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0.011 |
0.015 |
0.021 |
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0.033 |
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VSK.270 |
0.008 |
0.012 |
0.014 |
0.020 |
0.032 |
0.007 |
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0.011 |
0.015 |
0.020 |
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0.033 |
K/W |
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VSK.320 |
0.008 |
0.010 |
0.013 |
0.020 |
0.032 |
0.007 |
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0.011 |
0.015 |
0.020 |
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0.033 |
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93581 |
For technical questions within your region, please contact one of the following: |
www.vishay.com |
Revision: 02-Jul-10 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
3 |
VSK.250, VSK.270, VSK.320 Series
Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules)
<![if ! IE]> <![endif]>(°C) |
150 |
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VSK.250.. Series |
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<![if ! IE]> <![endif]>Temperature |
140 |
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R thJC(DC) = 0.16 K/W |
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130 |
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120 |
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Conduction Angle |
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<![if ! IE]> <![endif]>Case |
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110 |
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<![if ! IE]> <![endif]>Allowable |
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100 |
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30° |
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60° |
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90° |
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<![if ! IE]> <![endif]>Maximum |
90 |
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120° |
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80 |
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180° |
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0 |
50 |
100 |
150 |
200 |
250 |
300 |
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Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
<![if ! IE]> <![endif]>(°C) |
150 |
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VSK.250.. Series |
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<![if ! IE]> <![endif]>Temperature |
140 |
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R thJC(DC) = 0.16 K/W |
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130 |
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120 |
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Conduction Period |
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<![if ! IE]> <![endif]>Case |
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110 |
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<![if ! IE]> <![endif]>Allowable |
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30° |
60° |
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100 |
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90° |
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<![if ! IE]> <![endif]>Maximum |
90 |
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120° |
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180° |
DC |
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80 |
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0 |
50 |
100 |
150 |
200 |
250 |
300 |
350 |
400 |
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Average Forward Current (A) |
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Fig. 2 - Current Ratings Characteristics
<![if ! IE]> <![endif]>Loss(W) |
300 |
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180° |
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250 |
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120° |
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90° |
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<![if ! IE]> <![endif]>Power |
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60° |
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200 |
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30° |
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<![if ! IE]> <![endif]>Forward |
RMS Limit |
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150 |
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<![if ! IE]> <![endif]>Average |
100 |
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Conduction Angle |
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VSK.250.. Series |
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<![if ! IE]> <![endif]>Maximum |
50 |
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T J= 150°C |
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0 |
50 |
100 |
150 |
200 |
250 |
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0 |
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
<![if ! IE]> <![endif]>(W) |
450 |
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DC |
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<![if ! IE]> <![endif]>Loss |
400 |
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180° |
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120° |
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<![if ! IE]> <![endif]>Power |
350 |
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90° |
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300 |
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60° |
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<![if ! IE]> <![endif]>Forward |
250 |
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30° |
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200 |
RMS Limit |
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<![if ! IE]> <![endif]>Average |
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150 |
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Conduction Period |
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100 |
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<![if ! IE]> <![endif]>Maximum |
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VSK.250.. Series |
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50 |
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T J= 150°C |
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0 |
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0 |
50 |
100 |
150 |
200 |
250 |
300 |
350 |
400 |
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Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
<![if ! IE]> <![endif]>Loss(W) |
600 |
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R |
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t |
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h |
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A |
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500 |
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<![if ! IE]> <![endif]>Power |
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2 |
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180° |
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K/ |
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/ |
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400 |
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W |
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(Sine) |
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0. |
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- |
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D |
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<![if ! IE]> <![endif]>Forward |
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2 |
K/ |
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l |
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t |
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a |
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W |
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R |
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300 |
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DC |
0. |
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2 |
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5 |
K/ |
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<![if ! IE]> <![endif]>Total |
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W |
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200 |
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0. |
4 |
K/W |
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<![if ! IE]> <![endif]>Maximum |
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0 |
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VSK.250.. Series |
.6 |
K/ W |
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100 |
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Per Junction |
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TJ = 150°C |
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0 |
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25 |
50 |
75 |
100 |
125 |
150 |
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0 |
50 |
100 |
150 |
200 |
250 |
300 |
350 |
400 |
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Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
www.vishay.com |
For technical questions within your region, please contact one of the following: |
Document Number: 93581 |
4 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
Revision: 02-Jul-10 |