Vishay VS-VSKT105.. Series, VS-VSKH105.. Series, VS-VSKL105.. Series, VS-VSKN105.. Series Data Sheet

VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series

Vishay Semiconductors

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

ADD-A-PAK
PRODUCT SUMMARY
IT(AV) or IF(AV)	105 A
Type	Modules - Thyristor, Standard

MECHANICAL DESCRIPTION

The ADD-A-PAK Generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces.

FEATURES

• High voltage

• Industrial standard package

•Low thermal resistance

•UL approved file E78996

•Designed and qualified for industrial level

BENEFITS

•Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate

•Up to 1600 V

•High surge capability

•Easy mounting on heatsink

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.

MAJOR RATINGS AND CHARACTERISTICS

	SYMBOL		CHARACTERISTICS	VALUES	UNITS
	IT(AV) or IF(AV)	85	°C	105
	IO(RMS)	As AC switch		235	A
	ITSM,	50	Hz	2000
	IFSM	60	Hz	2094
	I2t	50	Hz	20	kA2s
		60	Hz	18.26
	I2 t			200	kA2 s
	VRRM	Range		400 to 1600	V
	TStg			-40 to 130	°C
	TJ			-40 to 130

Revision: 21-Mar-14

1

Document Number: 94628

VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series

Vishay Semiconductors

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

	VOLTAGE	VRRM, MAXIMUM	VRSM, MAXIMUM	VDRM, MAXIMUM REPETITIVE	IRRM, IDRM
TYPE NUMBER		REPETITIVE PEAK	NON-REPETITIVE PEAK	PEAK OFF-STATE VOLTAGE,
	CODE	REVERSE VOLTAGE	REVERSE VOLTAGE	GATE OPEN CIRCUIT	AT 130 °C
					mA
		V	V	V
	04	400	500	400
	06	600	700	600
	08	800	900	800
VS-VSK.105	10	1000	1100	1000	20
	12	1200	1300	1200
	14	1400	1500	1400
	16	1600	1700	1600

ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current (thyristors)

IT(AV)

180° conduction, half sine wave,

105

Maximum average forward current (diodes)

IF(AV)

TC = 85 °C

Maximum continuous RMS on-state current,

IO(RMS)

or

235

as AC switch

I(RMS)

I(RMS)

A

ITSM

t = 10 ms

No voltage

Sinusoidal

2000

Maximum peak, one-cycle non-repetitive

t = 8.3 ms

reapplied

2094

or

half wave,

on-state or forward current

t = 10 ms

100 % VRRM

1682

IFSM

initial TJ = TJ maximum

t = 8.3 ms

reapplied

1760

t = 10 ms

No voltage

20

Maximum I2t for fusing

I2t

t = 8.3 ms

reapplied

Initial TJ = TJ maximum

18.26

kA2s

t = 10 ms

100 % VRRM

14.14

t = 8.3 ms

reapplied

12.91

Maximum I2 t for fusing

I2 t (1)

t = 0.1 ms to 10 ms, no voltage reapplied

200

kA2 s

TJ = TJ maximum

Maximum value or threshold voltage

VT(TO) (2)

Low level (3)

TJ = TJ maximum

0.98

V

High level (4)

1.12

Maximum value of on-state

rt (2)

Low level (3)

TJ = TJ maximum

2.7

m

slope resistance

High level (4)

2.34

Maximum peak on-state or forward voltage

VTM

ITM = x IT(AV)

TJ = 25 °C

1.8

V

VFM

IFM = x IF(AV)

Maximum non-repetitive rate of rise of

dI/dt

TJ = 25 °C, from 0.67 VDRM,

150

A/μs

turned on current

ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs

Maximum holding current

IH

TJ = 25 °C, anode supply = 6 V,

250

resistive load, gate open circuit

mA

Maximum latching current

IL

TJ = 25 °C, anode supply = 6 V, resistive load

400

Notes

(1)I2t for time tx = I2 t x tx

(2)Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2

(3)16.7 % x x IAV < I < x IAV

(4)I > x IAV

Revision: 21-Mar-14

2

Document Number: 94628

VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series

Vishay Semiconductors

TRIGGERING

	PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
	Maximum peak gate power	PGM			12	W
	Maximum average gate power	PG(AV)			3
	Maximum peak gate current	IGM			3	A
	Maximum peak negative gate voltage	- VGM			10
			TJ = -40 °C	Anode supply = 6 V	4.0	V
	Maximum gate voltage required to trigger	VGT	TJ = 25 °C		2.5
				resistive load
			TJ = 125 °C		1.7
			TJ = -40 °C	Anode supply = 6 V	270
	Maximum gate current required to trigger	IGT	TJ = 25 °C		150	mA
				resistive load
			TJ = 125 °C		80
	Maximum gate voltage that will not trigger	VGD	TJ = 125 °C, rated VDRM applied		0.25	V
	Maximum gate current that will not trigger	IGD	TJ = 125 °C, rated VDRM applied		6	mA

BLOCKING

	PARAMETER	SYMBOL		TEST CONDITIONS	VALUES	UNITS
	Maximum peak reverse and off-state	IRRM,	TJ = 130	°C, gate open circuit	20	mA
	leakage current at VRRM, VDRM	IDRM
	Maximum RMS insulation voltage	VINS	50 Hz		3000 (1 min)	V
					3600 (1 s)
	Maximum critical rate of rise of off-state voltage	dV/dt	TJ = 130	°C, linear to 0.67 VDRM	1000	V/μs

THERMAL AND MECHANICAL SPECIFICATIONS

	PARAMETER		SYMBOL	TEST CONDITIONS	VALUES	UNITS
	Junction operating temperature range		TJ		-40 to 130	°C
	Storage temperature range		TStg
	Maximum internal thermal resistance,		RthJC	DC operation	0.22
	junction to case per leg
						°C/W
	Typical thermal resistance,		RthCS	Mounting surface flat, smooth and greased	0.1
	case to heatsink per module
		to heatsink		A mounting compound is recommended and	4
				the torque should be rechecked after a period
	Mounting torque ± 10 %					Nm
		busbar		of 3 hours to allow for the spread of the	3
				compound.
	Approximate weight				75	g
					2.7	oz.
	Case style			JEDEC®	AAP GEN VII (TO-240AA)

R CONDUCTION PER JUNCTION

DEVICES

SINE HALF WAVE CONDUCTION

RECTANGULAR WAVE CONDUCTION

UNITS

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

VSK.105..

0.04

0.048

0.063

0.085

0.125

0.033

0.052

0.067

0.088

0.127

°C/W

Note

• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Revision: 21-Mar-14

3

Document Number: 94628