VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
Vishay Semiconductors
ADD-A-PAK Gen 7
Power Modules Standard Diodes, 80 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996 
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
ADD-A-PAK
PRODUCT SUMMARY
IF(AV) |
80 A |
Type |
Modules - Diode, High Voltage |
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Package |
ADD-A-PAK Gen 7 |
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Two diodes doubler circuit, two |
Circuit |
diodes common cathode, two diodes |
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common anode, single diode |
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MECHANICAL DESCRIPTION
The ADD-A-PAK Gen 7, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces.
BENEFITS
•Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate
•Up to 1600 V
•High surge capability
•Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL |
CHARACTERISTICS |
VALUES |
UNITS |
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IF(AV) |
110 °C |
80 |
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IF(RMS) |
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126 |
A |
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IFSM |
50 Hz |
1500 |
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60 Hz |
1570 |
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I2t |
50 Hz |
11.25 |
kA2s |
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60 Hz |
10.26 |
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I2 t |
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112.5 |
kA2 s |
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VRRM |
Range |
400 to 1600 |
V |
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TJ |
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-40 to +150 |
°C |
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TStg |
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Revision: 05-Apr-16 |
1 |
Document Number: 94626 |
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER |
VOLTAGE |
VRRM, MAXIMUM REPETITIVE PEAK |
VRSM, MAXIMUM NON-REPETITIVE |
IRRM MAXIMUM |
CODE |
REVERSE VOLTAGE |
PEAK REVERSE VOLTAGE |
AT TJ = 150 °C |
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V |
V |
mA |
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04 |
400 |
500 |
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06 |
600 |
700 |
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08 |
800 |
900 |
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VS-VSK.71 |
10 |
1000 |
1100 |
10 |
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12 |
1200 |
1300 |
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14 |
1400 |
1500 |
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16 |
1600 |
1700 |
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FORWARD CONDUCTION
PARAMETER |
SYMBOL |
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TEST CONDITIONS |
VALUES |
UNITS |
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Maximum average forward current |
IF(AV) |
180° conduction, half sine wave |
80 |
A |
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at case temperature |
110 |
°C |
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Maximum RMS forward current |
IF(RMS) |
DC at 90 °C case temperature |
126 |
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t = 10 ms |
No voltage |
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1500 |
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Maximum peak, one-cycle forward, |
IFSM |
t = 8.3 ms |
reapplied |
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1570 |
A |
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non-repetitive surge current |
t = 10 ms |
100 % VRRM |
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1260 |
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t = 8.3 ms |
reapplied |
Sinusoidal half wave, |
1320 |
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t = 10 ms |
No voltage |
intitial TJ = TJ maximum |
11.25 |
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Maximum I2t for fusing |
I2t |
t = 8.3 ms |
reapplied |
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10.26 |
kA2s |
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t = 10 ms |
100 % VRRM |
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7.95 |
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t = 8.3 ms |
reapplied |
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7.23 |
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Maximum I2 t for fusing |
I2 t |
t = 0.1 ms to 10 ms, no voltage reapplied |
112.5 |
kA2 s |
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Low level value of threshold voltage |
VF(TO)1 |
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum |
0.73 |
V |
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High level value of threshold voltage |
VF(TO)2 |
(I > x IF(AV)), TJ = TJ maximum |
0.83 |
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Low level value of forward |
rf1 |
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum |
3.22 |
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slope resistance |
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m |
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High level value of forward |
rf2 |
(I > x IF(AV)), TJ = TJ maximum |
2.89 |
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slope resistance |
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Maximum forward voltage drop |
VFM |
IFM = x IF(AV), TJ = 25 °C, tp = 400 μs square wave |
1.6 |
V |
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BLOCKING
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum peak reverse |
IRRM |
TJ = 150 °C |
10 |
mA |
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leakage current |
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Maximum RMS insulation voltage |
VINS |
50 Hz |
3000 (1 min) |
V |
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3600 (1 s) |
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Revision: 05-Apr-16 |
2 |
Document Number: 94626 |
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Junction and storage temperature range |
TJ, TStg |
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-40 to +150 |
°C |
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Maximum internal thermal resistance, |
RthJC |
DC operation |
0.28 |
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junction to case per leg |
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°C/W |
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Typical thermal resistance, |
RthCS |
Mounting surface flat, smooth and greased |
0.1 |
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case to heatsink per module |
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to heatsink |
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A mounting compound is recommended and the |
4 |
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Mounting torque ± 10 % |
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torque should be rechecked after a period of |
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Nm |
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busbar |
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3 |
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3 hours to allow for the spread of the compound. |
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Approximate weight |
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75 |
g |
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2.7 |
oz. |
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Case style |
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JEDEC® |
ADD-A-PAK Gen 7 (TO-240AA) |
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R CONDUCTION PER JUNCTION
DEVICES |
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SINE HALF WAVE CONDUCTION |
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RECTANGULAR WAVE CONDUCTION |
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UNITS |
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180° |
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120° |
90° |
60° |
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30° |
180° |
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120° |
90° |
60° |
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30° |
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VSK.71 |
0.075 |
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0.088 |
0.113 |
0.155 |
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0.228 |
0.06 |
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0.094 |
0.12 |
0.158 |
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0.23 |
°C/W |
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Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 05-Apr-16 |
3 |
Document Number: 94626 |
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