Vishay VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 Data Sheet

VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3

www.vishay.com	Vishay Semiconductors

Schottky Rectifier, 1.1 A

Cathode Anode

DO-204AL

PRODUCT SUMMARY

Package	DO-204AL (DO-41)
IF(AV)	1.1 A
VR	50 V, 60 V
VF at IF	See Electrical table
IRM max.	11.0 mA at 125 °C
TJ max.	150 °C
Diode variation	Single die
EAS	2.0 mJ

FEATURES

•Low profile, axial leaded outline

•High frequency operation

•Very low forward voltage drop

• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

•Guard ring for enhanced ruggedness and long term reliability

•Compliant to RoHS Directive 2002/95/EC

•Designed and qualified for commercial level

•Halogen-free according to IEC 61249-2-21 definition (-M3 only)

DESCRIPTION

The VS-11DQ... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL	CHARACTERISTICS	VALUES	UNITS
IF(AV)	Rectangular waveform	1.1	A
VRRM		50/60	V
IFSM	tp = 5 μs sine	150	A
VF	1 Apk, TJ = 125 °C	0.53	V
TJ	Range	- 40 to 150	°C

VOLTAGE RATINGS

	PARAMETER	SYMBOL	VS-11DQ05	VS-11DQ05-M3	VS-11DQ06	VS-11DQ06-M3	UNITS
	Maximum DC reverse voltage	VR	50	50	60	60	V
	Maximum working peak reverse voltage	VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER	SYMBOL	TEST CONDITIONS			VALUES	UNITS
Maximum average forward current	IF(AV)	50 % duty cycle at TC = 84 °C, rectangular waveform			1.1
See fig. 4
						A
Maximum peak one cycle		5 µs sine or 3 µs rect. pulse	Following any rated		150
non-repetitive surge current	IFSM		load condition and with
See fig. 6		10 ms sine or 6 ms rect. pulse	rated VRRM applied		25
Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 1 A, L = 4 mH			2.0	mJ
Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 μs			1.0	A
		Frequency limited by TJ maximum VA = 1.5 x VR typical
Revision: 21-Sep-11		1		Document Number: 93206

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3

		www.vishay.com				Vishay Semiconductors
	ELECTRICAL SPECIFICATIONS
	PARAMETER			SYMBOL	TEST CONDITIONS		VALUES		UNITS
					1 A	TJ = 25 °C	0.58
	Maximum forward voltage drop			VFM (1)	2 A		0.76		V
	See fig. 1				1 A	TJ = 125 °C	0.53
					2 A		0.64
	Maximum reverse leakage current			IRM (1)	TJ = 25 °C	VR = Rated VR	1.0		mA
	See fig. 2				TJ = 125 °C		11
	Typical junction capacitance			CT	VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		55		pF
	Typical series inductance			LS	Measured lead to lead 5 mm from package body		8.0		nH
	Maximum voltage rate of change			dV/dt	Rated VR		10 000		V/µs
Note
(1)	Pulse width < 300 μs, duty cycle < 2 %
	THERMAL - MECHANICAL SPECIFICATIONS
	PARAMETER			SYMBOL	TEST CONDITIONS		VALUES		UNITS
	Maximum junction and storage			TJ (1), TStg			- 40 to 150		°C
	temperature range
	Maximum thermal resistance,			RthJA	DC operation		100
	junction to ambient				Without cooling fin
									°C/W
	Typical thermal resistance,			RthJL	DC operation		81
	junction to lead				See fig. 4
	Approximate weight						0.33		g
							0.012		oz.
	Marking device				Case style DO-204AL (DO-41)		11DQ05
							11DQ06
Note
(1)	dPtot	1
	------------- < -------------- thermal runaway condition for a diode on its own heatsink
	dTJ	RthJA

Revision: 21-Sep-11

2

Document Number: 93206

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000