Vishay VS-100BGQ015 Data Sheet

VS-100BGQ015

www.vishay.com	Vishay Semiconductors
	Schottky Rectifier, 100 A

Cathode Anode

PowerTab®

PRODUCT SUMMARY

Package	PowerTab®
IF(AV)	100 A
VR	15 V
VF at IF	0.45 V
IRM	870 mA at 100 °C
TJ max.	125 °C
Diode variation	Single die
EAS	9 mJ

FEATURES

• Ultralow forward voltage drop

• Optimized for OR-ing applications

• Guard ring for enhanced ruggedness and long term reliability

•Screw mounting only

•Designed and qualified according to JEDEC-JESD47

•125 °C max. operating junction temperature (VR < 5 V)

•High frequency operation

•Continuous high current operation

•PowerTab® package

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

The VS-100BGQ015 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.

MAJOR RATINGS AND CHARACTERISTICS

	SYMBOL	CHARACTERISTICS	VALUES	UNITS
	IF(AV)	Rectangular waveform	100	A
		TC	88	°C
	VRRM		15	V
	IFSM	tp = 5 μs sine	5000	A
	VF	100 Apk (typical)	0.39	V
		TJ	125	°C
	TJ	Range	- 55 to 125	°C

VOLTAGE RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS	VS-100BGQ015	UNITS
	Maximum DC reverse voltage	VR	TJ = 100 °C	15	V
			TJ = 125 °C	5

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS			VALUES	UNITS
	Maximum average forward current	IF(AV)	50 % duty cycle at TC = 88 °C, rectangular waveform			100	A
	Maximum peak one cycle		5 μs sine or 3 μs rect. pulse		Following any rated load	5000
		IFSM			condition and with rated		A
	non-repetitive surge current		10 ms sine or 6 ms rect. pulse			1000
					VRRM applied
	Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 2 A, L = 4.5 mH			9	mJ
	Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 μs			2	A
			Frequency limited by TJ maximum VA = 3 x VR typical
	Revision: 15-Jun-11		1			Document Number: 94578

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-100BGQ015

www.vishay.com				Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER		SYMBOL	TEST CONDITIONS		TYP.		MAX.				UNITS
			50 A	TJ = 25 °C	0.36			0.4
Forward voltage drop		VFM (1)	100 A		0.45			0.52			V
			50 A	TJ = 125 °C	0.27			0.31
			100 A		0.39			0.45
			TJ = 100 °C, VR = 12 V		480			700			mA
Maximum reverse leakage current		IRM (1)	TJ = 125 °C, VR = 5 V		1			1.2			A
			TJ = 25 °C	VR = Rated VR	7			18			mA
			TJ = 100 °C		580			870
Maximum junction capacitance		CT	VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C		3800						pF
Typical series inductance		LS	Measured from tab to mounting plane		3.5						nH
Maximum voltage rate of change		dV/dt	Rated VR		10 000						V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL	TEST CONDITIONS		VALUES					UNITS
Maximum junction temperature		TJ			- 55 to 125
range											°C
Maximum storage temperature range		TStg			- 55 to 150
Maximum thermal resistance,		RthJC	DC operation		0.50
junction to case
										°C/W
Maximum thermal resistance,		RthCS	Mounting surface, smooth and greased		0.30
case to heatsink
Approximate weight					5						g
					0.18						oz.
Mounting torque	minimum				1.2 (10)					N · m
										(lbf · in)
	maximum				2.4 (20)
Marking device			Case style PowerTab®		100BGQ015

Revision: 15-Jun-11

2

Document Number: 94578

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-100BGQ015

		www.vishay.com
	1000
<![if ! IE]> <![endif]>(A)
F 100		Tj = 125°C
<![if ! IE]> <![endif]>-I
<![if ! IE]> <![endif]>InstantaneousForwardCurrent	10			Tj = 100°C
			Tj = 25°C
	1
	0.0	0.2	0.4	0.6	0.8	1.0

ForwardVoltageDrop-VFM(V)

Vishay Semiconductors

	1000
			100°C
<![if ! IE]> <![endif]>(mA)					75°C
<![if ! IE]> <![endif]>R	100
<![if ! IE]> <![endif]>I
<![if ! IE]> <![endif]>-
<![if ! IE]> <![endif]>ReverseCurrent						50°C
	10					25°C
	1
	0	2	4	6	8	10	12	14	16

ReverseVoltage-VR(V)

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

10000
<![if ! IE]> <![endif]>(pF)
<![if ! IE]> <![endif]>T				TJ = 25°C
<![if ! IE]> <![endif]>C
<![if ! IE]> <![endif]>Junction Capacitance -
1000
0	2	4	6	8	10	12	14	16
		Reverse Voltage - VR (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)ThermalImpedanceZthJC

1

D = 0.75

D = 0.5

D = 0.33

0.1

D = 0.25

D = 0.2

Single

Pulse

(Thermal

Resistance)

0.01

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

t1,RectangularPulseDuration(Seconds)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Revision: 15-Jun-11

3

Document Number: 94578

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000