DM-231
Magnetoresistance Element
For the availability of this product, please contact the sales office.
Description |
M-118 (Plastic) |
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DM-231 a magnetic sensor using magnetoresist- |
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ance effect is composed of ferromagnetic material |
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deposited by evaporation on a silicon substrate. It is |
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suitable for angle of rotation detection. |
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Features
•Low magnetic field and high sensitivity: bridge type stands for large output voltage
150 mVp-p (Min.) at VCC=5 V, H=14400 A/m
•Fitted with bias magnet: stable output.
•High reliability: Achieved through silicon nitride protective film.
Structure
Ferromagnetic thin film circuit (With ferrite magnet)
Applications
•Non-contact angle of rotation detection.
•Contactless potentiometer.
Absolute Maximum Ratings (Ta=25 °C) |
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• Supply voltage |
VCC |
10 |
V |
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• Storage temperature |
Tstg |
–30 to +100 |
°C |
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Recommended Operating Conditions |
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• Supply voltage |
VCC |
5 |
V |
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• Operating temperature |
Topr |
–20 to + 75 |
°C |
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Electrical Characteristics |
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Ta=25 °C |
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Item |
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Symbol |
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Condition |
Min. |
Typ. |
Max. |
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Unit |
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Output voltage |
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VO |
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VCC=5 V , H=14400 A/m (Peak) |
150 |
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mVp-p |
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AC magnetic field θ |
=0 ° |
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Midpoint potential |
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VA, VB |
VCC=5 V , H=0 A/m |
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2.475 |
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2.525 |
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V |
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Midpoint potential |
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|VA-VB| |
VCC=5 V , H=0 A/m |
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15 |
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% |
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difference/Output voltage |
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VO |
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Total resistance |
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RT |
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H=14400 A/m (Peak) |
500 |
650 |
800 |
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Ω |
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AC magnetic field θ |
=0 ° |
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Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E88Z12C5X-TE
DM-231
Equivalent Circuit
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1 |
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VCC |
RA |
RD |
2 |
4 |
VA |
VB |
RB |
RC |
3GND
Basic Performance
1) Operation principle
External magnetic field H |
1 |
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RA
2 
Synthetic 
magnetic field (a)
RB
3 
Bias magnetic field
H=14400A/m
RD
RC
Various resistances change according to the direction of the combnied bias and external magnetic field.
¡) When the direction of the synthetic magnetic field is (a), RA,RC : Maximum resistance
RB,RD : Minimum resistance
¡¡) When the direction of the synthetic magnetic field is (b),
4 RA,RC : Minimum resistance
RB,RD : Maximum resistance
External magnetic field H
Synthetic magnetic field (b)
Device internal structure (Back of mark face)
Bias magnetic field
3
2
4
1
2) Power supply pin and output pin |
3) Sensitivity direction |
2 |
3 |
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231 |
1 |
4 |
1 |
VCC |
2 |
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Out put |
4 |
Differential amplifier |
3 |
GND |
Non-Sensitive
Sensitive
The ferromagnetic magnetoresistance element differs from the semiconductor magnetoresistance element and hole element in that it responds only to the magnetic field within the element's surface. It is not sensitive to the magnetic field perpendicular to the element.
—2—
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