MJ15001 (NPN),
MJ15002 (PNP)
Complementary Silicon
Power Transistors
The MJ15001 and MJ15002 are EpiBaset power transistors designed for high power audio, disk head positioners and other linear applications.
Features
•High Safe Operating Area (100% Tested) − 5.0 A @ 40 V
0.5A @ 100 V
•For Low Distortion Complementary Designs
•High DC Current Gain − hFE = 25 (Min) @ IC = 4 Adc
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector−Emitter Voltage |
VCEO |
140 |
Vdc |
Collector−Base Voltage |
VCBO |
140 |
Vdc |
Emitter−Base Voltage |
VEBO |
5 |
Vdc |
Collector Current − Continuous |
IC |
15 |
Adc |
Base Current − Continuous |
IB |
5 |
Adc |
Emitter Current − Continuous |
IE |
20 |
Adc |
Total Power Dissipation @ TC = 25°C |
PD |
200 |
W |
Derate above 25°C |
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1.14 |
W/°C |
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Operating and Storage Junction |
TJ, Tstg |
–65 to +200 |
°C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction−to−Case |
RqJC |
0.875 |
°C/W |
Maximum Lead Temperature for Soldering |
TL |
265 |
°C |
Purposes 1/16″ from Case for v 10 secs |
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Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
20 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS, 250 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1500xG
AYYWW
MEX
MJ1500x |
= Device Code |
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x = 1 or 2 |
G |
= Pb−Free Package |
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A |
= |
Location Code |
YY |
= Year |
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WW |
= Work Week |
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MEX |
= |
Country of Orgin |
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ORDERING INFORMATION
Device |
Package |
Shipping |
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MJ15001 |
TO−204AA |
100 Units/Tray |
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MJ15001G |
TO−204AA |
100 Units/Tray |
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(Pb−Free) |
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MJ15002 |
TO−204AA |
100 Units/Tray |
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MJ15002G |
TO−204AA |
100 Units/Tray |
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(Pb−Free) |
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♥ Semiconductor Components Industries, LLC, 2005 |
1 |
Publication Order Number: |
December, 2005 − Rev. 4 |
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MJ15001/D |
MJ15001 (NPN), MJ15002 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector−Emitter Sustaining Voltage (Note 1) |
VCEO(sus) |
140 |
− |
Vdc |
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(IC, = 200 mAdc, IB = 0) |
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Collector Cutoff Current |
ICEX |
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(VCE = 140 Vdc, VBE(off) = 1.5 Vdc) |
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− |
100 |
mAdc |
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(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) |
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− |
2.0 |
mAdc |
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Collector Cutoff Current |
ICEO |
− |
250 |
mAdc |
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(VCE = 140 Vdc, IB = 0) |
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Emitter Cutoff Current |
IEBO |
− |
100 |
mAdc |
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(VEB = 5 Vdc, IC = 0) |
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SECOND BREAKDOWN |
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Second Breakdown Collector Current with Base Forward Biased |
IS/b |
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Adc |
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(VCE = 40 Vdc, t = 1 s (non−repetitive)) |
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5.0 |
− |
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(VCE = 100 Vdc, t = 1 s (non−repetitive)) |
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0.5 |
− |
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ON CHARACTERISTICS |
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DC Current Gain |
hFE |
25 |
150 |
− |
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(IC = 4 Adc, VCE = 2 Vdc) |
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Collector−Emitter Saturation Voltage |
VCE(sat) |
− |
1.0 |
Vdc |
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(IC = 4 Adc, IB = 0.4 Adc) |
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Base−Emitter On Voltage |
VBE(on) |
− |
2.0 |
Vdc |
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(IC = 4 Adc, VCE = 2 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Current−Gain — Bandwidth Product |
fT |
2.0 |
− |
MHz |
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(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz) |
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Output Capacitance |
Cob |
− |
1000 |
pF |
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(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) |
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1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. |
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200 |
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TC = 25°C |
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(AMP) |
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10 |
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7 |
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CURRENT |
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5 |
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3 |
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2 |
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COLLECTOR |
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1 |
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TJ = 200°C |
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BONDING WIRE LIMITED |
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0.7 |
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THERMAL LIMITATION (SINGLE PULSE) |
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, |
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C0.5 |
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SECOND BREAKDOWN LIMITED |
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I |
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0.3 |
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CURVES APPLY BELOW RATED VCEO |
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0.2 |
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2 |
3 |
5 |
7 |
10 |
20 |
30 |
50 |
70 |
100 |
200 |
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ (pk) = 200°C; TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
http://onsemi.com
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