Sony MJH11017, MJH11019, MJH11021, MJH11018, MJH11020 Service Manual

MJH11017, MJH11019, MJH11021É(PNP) MJH11018, MJH11020, MJH11022É(NPN)

Preferred Device

Complementary Darlington

Silicon Power Transistors

These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.

Features

•High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)

•Collector−Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) — MJH11018, 17

=200 Vdc (Min) — MJH11020, 19

=250 Vdc (Min) — MJH11022, 21

•Low Collector−Emitter Saturation Voltage

VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A

=1.8 V (Typ) @ IC = 10 A

•Monolithic Construction

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating	Symbol	Max	Unit
Collector−Emitter Voltage	VCEO		Vdc
MJH11018, MJH11017		150
MJH11020, MJH11019		200
MJH11022, MJH11021		250
Collector−Base Voltage	VCB		Vdc
MJH11018, MJH11017		150
MJH11020, MJH11019		200
MJH11022, MJH11021		250
Emitter−Base Voltage	VEB	5.0	Vdc
Collector Current − Continuous	IC	15	Adc
− Peak (Note 1)		30
Base Current	IB	0.5	Adc
Total Device Dissipation @ TC = 25_C	PD	150	W
Derate above 25_C		1.2	W/_C
Operating and Storage Junction Temperature	TJ, Tstg	–Ê65 to	_C
Range		+Ê150
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction−to−Case	RqJC	0.83	_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS

NPN	PNP
COLLECTOR 2	COLLECTOR 2
BASE	BASE
1	1
EMITTER 3	EMITTER 3
MJH11018	MJH11017
MJH11020	MJH11019
MJH11022	MJH11021
	MARKING
	DIAGRAM

	SOT−93
	(TO−218)	AYWWG
1	CASE 340D	MJH110xx
2	STYLE 1
3
A	= Assembly Location
Y	= Year
WW	= Work Week
G	= Pb−Free Package
MJH110xx	= Device Code
	xx = 17, 19, 21, 18, 20, 22

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

♥ Semiconductor Components Industries, LLC, 2008	1	Publication Order Number:
September, 2008 − Rev. 7		MJH11017/D

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

	160
(WATTS)	140
	120
DISSIPATION	100
	80
	60
, POWER
	40
D	20
P
	0	20	40	60	80	100	120	140	160
	0
				TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic			Symbol		Min	Max	Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)			VCEO(sus)				Vdc
(IC = 0.1 Adc, IB = 0)		MJH11017, MJH11018			150	−
		MJH11019, MJH11020			200	−
		MJH11021, MJH11022			250	−
Collector Cutoff Current			ICEO				mAdc
(VCE = 75 Vdc, IB = 0)		MJH11017, MJH11018			−	1.0
(VCE = 100 Vdc, IB = 0)		MJH11019, MJH11020			−	1.0
(VCE = 125 Vdc, IB = 0)		MJH11021, MJH11022			−	1.0
Collector Cutoff Current			ICEV				mAdc
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)					−	0.5
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)					−	5.0
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)			IEBO		−	2.0	mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain			hFE				−
(IC = 10 Adc, VCE = 5.0 Vdc)					400	15,000
(IC = 15 Adc, VCE = 5.0 Vdc)					100	−
Collector−Emitter Saturation Voltage			VCE(sat)				Vdc
(IC = 10 Adc, IB = 100 mA)					−	2.5
(IC = 15 Adc, IB = 150 mA)					−	4.0
Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)			VBE(on)		−	2.8	Vdc
Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)			VBE(sat)		−	3.8	Vdc
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)			fT		3.0	−	−
Output Capacitance		MJH11018, MJH11020, MJH11022	Cob		−	400	pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)		MJH11017, MJH11019, MJH11021			−	600
Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)			hfe		75	−	−
SWITCHING CHARACTERISTICS
					Typical
Characteristic			Symbol		NPN	PNP	Unit
Delay Time			td		150	75	ns
Rise Time		(VCC = 100 V, IC = 10 A, IB = 100 mA	tr		1.2	0.5	ms
Storage Time		VBE(off) = 5.0 V) (See Figure 2)	ts		4.4	2.7	ms
Fall Time			tf		2.5	2.5	ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

VCC

RB & RC varied to obtain desired current levels D1, must be fast recovery types, e.g.:

1N5825 used above IB ≈ 100 mA MSD6100 used below IB ≈ 100 mA

tr, tf ≤ 10 ns

Duty Cycle = 1.0%

V2
APPROX
+12 V
0
V1
APPROX
-Ê8.0 V	25 ms

100 V

RC SCOPE

TUT

RB

51 D1

+Ê4.0 V

For td and tr, D1 is disconnected and V2 = 0

For NPN test circuit, reverse diode and voltage polarities.

				Figure 2. Switching Times Test Circuit
		1.0
THERMALTRANSIENTEFFECTIVE		0.7	D = 0.5
		0.5
	(NORMALIZED)RESISTANCE
		0.3	0.2
		0.2	0.1
					P(pk)
		0.1	0.05	RqJC(t) = r(t) RqJC
		0.07	0.02	RqJC = 0.83°C/W MAX
		0.05		D CURVES APPLY FOR POWER
				PULSE TRAIN SHOWN	t1
		0.03	0.01
				READ TIME AT t1	t2
r(t),		0.02	SINGLE PULSE	TJ(pk) - TC = P(pk) RqJC(t)	DUTY CYCLE, D = t1/t2

0.01	0.02 0.03
0.01		0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000

t, TIME (ms)

Figure 3. Thermal Response

(AMPS)		TC = 25°C SINGLE PULSE
	30								0.1 ms
	20
CURRENT
	10			0.5 ms
	5.0			1.0 ms
, COLLECTOR	2.0				5.0 ms			dc
		WIRE BOND LIMIT
	1.0
		THERMAL LIMIT
	0.5	SECOND BREAKDOWN LIMIT
C					MJH11017, MJH11018
I
	0.2				MJH11019, MJH11020
	0				MJH11021, MJH11022
		2.0	3.0	5.0	10	20	30	50	100 150 250

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 4 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the limitations imposed by second breakdown.

Figure 4. Maximum Rated Forward Bias

Safe Operating Area (FBSOA)

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