OKI MD51V65805-50TA, MD51V65805-60JA, MD51V65805-60TA, MD51V65805-50JA Datasheet

E2G0142-18-11

Semiconductor	This version:MD51V65805Mar. 1998
¡ Semiconductor

MD51V65805

8,388,608-Word ´ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION

The MD51V65805 is a 8,388,608-word ´ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MD51V65805 achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MD51V65805 is available in a 32-pin plastic SOJ or 32-pin plastic TSOP.

FEATURES

•8,388,608-word ´ 8-bit configuration

•Single 3.3 V power supply, ±0.3 V tolerance

• Input	: LVTTL compatible, low input capacitance
• Output	: LVTTL compatible, 3-state
• Refresh	:
RAS-only refresh		: 4096 cycles/64 ms
CAS before RAS refresh, hidden refresh		: 4096 cycles/64 ms

•Fast page mode with EDO, read modify write capability

•CAS before RAS refresh, hidden refresh, RAS-only refresh capability

•Package options:

32-pin 400 mil plastic SOJ	(SOJ32-P-400-1.27)	(Product : MD51V65805-xxJA)
32-pin 400 mil plastic TSOP	(TSOPII32-P-400-1.27-K) (Product : MD51V65805-xxTA)
		xx indicates speed rank.

PRODUCT FAMILY

	Family	Access Time (Max.)				Cycle Time	Power Dissipation
						(Min.)
		tRAC	tAA	tCAC	tOEA		Operating (Max.)	Standby (Max.)
	MD51V65805-50	50 ns	25 ns	13 ns	13 ns	84 ns	504 mW	1.8 mW
	MD51V65805-60	60 ns	30 ns	15 ns	15 ns	104 ns	432 mW

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MD51V65805

PIN CONFIGURATION (TOP VIEW)

VCC	1	32	VSS	VCC	1
DQ1	2	31	DQ8	DQ1	2
DQ2	3	30	DQ7	DQ2	3
DQ3	4	29	DQ6	DQ3	4
DQ4	5	28	DQ5	DQ4	5
NC	6	27	VSS	NC	6
VCC	7	26	CAS	VCC	7
WE 8		25	OE	WE 8
RAS	9	24	NC	RAS	9
A0	10	23	A11R	A0	10
A1	11	22	A10	A1	11
A2	12	21	A9	A2	12
A3	13	20	A8	A3	13
A4	14	19	A7	A4	14
A5	15	18	A6	A5	15
VCC 16		17	VSS	VCC 16

	32	VSS
	31	DQ8
	30	DQ7
	29	DQ6
		DQ5
	28
		VSS
	27
		CAS
	26
		OE
	25
		NC
	24
		A11R
	23
	22	A10
		A9
	21
		A8
	20
		A7
	19
		A6
	18
		VSS
	17

32-Pin Plastic SOJ	32-Pin Plastic TSOP
	(K Type)

Pin Name	Function
A0 - A10, A11R	Address Input
RAS	Row Address Strobe
CAS	Column Address Strobe
DQ1 - DQ8	Data Input/Data Output
OE	Output Enable
WE	Write Enable
VCC	Power Supply (3.3 V)
VSS	Ground (0 V)
NC	No Connection

Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.

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MD51V65805

BLOCK DIAGRAM

	Timing				WE	OE
RAS
	Generator
						I/O		8	Output	8
CAS						Controller			Buffers
										DQ1 - DQ8
	11	Column			11	Column Decoders			Input
		Address						8		8
		Buffers							Buffers
		Internal			Sense Amplifiers 8		I/O	8
A0 - A10				Refresh			Selector
		Address
		Counter		Control Clock
	11	Row		Row		Memory
		Address	12
				Deco-	Word
A11R	1	Buffers				Cells
				ders	Drivers

VCC

On Chip

VBB Generator

On Chip

IVCC Generator

VSS

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MD51V65805

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

	Parameter	Symbol		Rating			Unit
	Voltage on Any Pin Relative to VSS	VT		–0.5 to 4.6			V
	Short Circuit Output Current	IOS		50			mA
	Power Dissipation	PD*		1			W
	Operating Temperature	Topr		0 to 70			°C
	Storage Temperature	Tstg		–55 to 150			°C
		*: Ta = 25°C
Recommended Operating Conditions						(Ta = 0°C to 70°C)
	Parameter	Symbol	Min.	Typ.		Max.	Unit
	Power Supply Voltage	VCC	3.0	3.3		3.6	V
		VSS	0	0		0	V
	Input High Voltage	VIH	2.0	—		VCC + 0.3	V
	Input Low Voltage	VIL	–0.3	—		0.8	V
Capacitance				(VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
	Parameter	Symbol	Typ.			Max.	Unit
	Input Capacitance (A0 - A10, A11R)	CIN1	—			5	pF
	Input Capacitance (RAS, CAS, WE, OE)	CIN2	—			7	pF
	Output Capacitance (DQ1 - DQ8)	CI/O	—			7	pF

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DC Characteristics						(VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C)
			MD51V65805				MD51V65805
Parameter	Symbol	Condition		-50			-60			Unit	Note
			Min.		Max.		Min.		Max.
Output High Voltage	VOH	IOH = –2.0 mA	2.4		VCC		2.4		VCC	V
Output Low Voltage	VOL	IOL = 2.0 mA	0		0.4		0		0.4	V
		0 V £ VI £ VCC + 0.3 V;
Input Leakage Current	ILI	All other pins not	–10		10		–10		10	mA
		under test = 0 V
Output Leakage Current	ILO	DQ disable	–10		10		–10		10	mA
		0 V £ VO £ VCC
Average Power		RAS, CAS cycling,
Supply Current	ICC1		—		140		—		120	mA	1, 2
		tRC = Min.
(Operating)
Power Supply		RAS, CAS = VIH	—		1		—		1
	ICC2	RAS, CAS	—		0.5				0.5	mA	1
Current (Standby)							—
		³ VCC –0.2 V
Average Power		RAS cycling,
Supply Current	ICC3	CAS = VIH,	—		140		—		120	mA	1, 2
(RAS-only Refresh)		tRC = Min.
Power Supply		RAS = VIH,
	ICC5	CAS = VIL,	—		5		—		5	mA	1
Current (Standby)
		DQ = enable
Average Power		RAS cycling,
Supply Current	ICC6		—		140		—		120	mA	1, 2
		CAS before RAS
(CAS before RAS Refresh)
Average Power		RAS = VIL,
Supply Current	ICC7	CAS cycling,	—		140		—		120	mA	1, 3
(Fast Page Mode)		tHPC = Min.

Notes : 1. ICC Max. is specified as ICC for output open condition.

2.The address can be changed once or less while RAS = VIL.

3.The address can be changed once or less while CAS = VIH.

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