MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by T2800/D
Triacs
Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.
•Blocking Voltage to 600 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
•T2800 Ð Four Quadrant Gating
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
T2800
SERIES
TRIACs
8 AMPERES RMS
200 thru 600 VOLTS
MT2
MT1
G
CASE 221A-04 (TO-220AB)
STYLE 4
Rating |
|
|
Symbol |
Value |
Unit |
|
|
|
|
|
|
|
|
Peak Repetitive Off-State Voltage(1) |
|
|
VDRM |
|
|
Volts |
(TJ = ±40 to +100°C, Gate Open) |
T2800 B |
|
200 |
|
|
|
|
|
|
|
|||
|
D |
|
400 |
|
|
|
|
M |
|
600 |
|
|
|
|
|
|
|
|
|
|
RMS On-State Current |
(TC = +80°C) |
IT(RMS) |
8 |
|
Amps |
|
(Conduction Angle = 360°) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Peak Non-repetitive Surge Current |
|
|
ITSM |
100 |
|
Amps |
(One Full Cycle, 60 Hz, TJ = +80°C) |
|
|
|
|
|
|
Circuit Fusing |
|
|
I2t |
40 |
|
A2s |
(t = 8.3 ms) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Peak Gate Power (Pulse Width = 1 μs) |
|
|
PGM |
16 |
|
Watts |
Average Gate Power |
|
|
PG(AV) |
0.35 |
|
Watt |
Peak Gate Trigger Current (Pulse Width = 1 μs) |
IGTM |
4 |
|
Amps |
||
Operating Junction Temperature Range |
|
|
TJ |
±40 to +100 |
°C |
|
Storage Temperature Range |
|
|
Tstg |
±40 to +150 |
°C |
|
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Characteristic |
|
Symbol |
Max |
|
Unit |
|
|
|
|
|
|
|
|
Thermal Resistance, Junction to Case |
|
|
RθJC |
2.2 |
|
°C/W |
1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
REV 1
Motorola, Inc. 1995
T2800 SERIES
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic |
|
|
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
|
|
Peak Blocking Current |
TC = 25°C |
|
IDRM |
Ð |
Ð |
10 |
μA |
(VD = Rated VDRM, Gate Open) |
|
|
|||||
|
TC = 100°C |
|
|
Ð |
Ð |
2 |
mA |
Peak On-State Voltage (Either Direction)* |
|
|
VTM |
Ð |
1.7 |
2 |
Volts |
(IT = 30 A Peak) |
|
|
|
|
|
|
|
Gate Trigger Current (Continuous dc) |
|
|
IGT |
|
|
|
mA |
(VD = 12 Vdc, RL = 12 Ohms) |
|
|
|
|
|
|
|
MT2(+), G(+) T2800 |
|
|
|
Ð |
10 |
25 |
|
MT2(+), G(±) T2800 |
|
|
|
Ð |
20 |
60 |
|
MT2(±), G(±) T2800 |
|
|
|
Ð |
15 |
25 |
|
MT2(±), G(+) T2800 |
|
|
|
Ð |
30 |
60 |
|
|
|
|
|
|
|
|
|
Gate Trigger Voltage (Continuous dc) (All Polarities) |
|
VGT |
Ð |
1.25 |
2.5 |
Volts |
|
(VD = 12 Vdc, RL = 100 Ohms) |
|
|
|
|
|||
(RL = 125 Ohms, VD = VDRM, TC = 100°C) |
|
|
0.2 |
Ð |
Ð |
|
|
Holding Current (Either Direction) |
|
|
IH |
Ð |
15 |
30 |
mA |
(VD = 12 Vdc, Gate Open) |
T2800 |
|
|
|
|||
|
|
|
|
|
|
|
|
Gate Controlled Turn-On Time |
|
|
tgt |
Ð |
1.6 |
Ð |
μs |
(VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 μs) |
|
|
|
|
|
||
Critical Rate-of-Rise of Commutation Voltage |
|
dv/dt(c) |
Ð |
10 |
Ð |
V/μs |
|
(VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms, |
|
|
|
|
|
||
Gate Unenergized, TC = 80°C) |
|
|
|
|
|
|
|
Critical Rate-of-Rise of Off-State Voltage |
|
|
dv/dt |
|
|
|
V/μs |
(VD = Rated VDRM, Exponential Voltage Rise, |
|
|
|
|
|
|
|
Gate Open, TC = 100°C) |
T2800 |
B |
|
100 |
Ð |
Ð |
|
|
|
|
|||||
|
|
D |
|
Ð |
Ð |
Ð |
|
|
|
M |
|
60 |
Ð |
Ð |
|
|
|
|
|
|
|
|
|
*Pulse Test: Pulse Width p 300 μs, Duty Cycle p 2%.
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
100
95
90
85
80
0
FIGURE 1 ± CURRENT DERATING
FULL CYCLE
SINUSOIDAL
WAVEFORM
2 |
4 |
6 |
8 |
IT(RMS), RMS ON-STATE CURRENT (AMP)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
FIGURE 2 ± POWER DISSIPATION
12
10
FULL CYCLE
8
SINUSOIDAL MAXIMUM
WAVEFORM
TYPICAL
6
4
2
0
0 |
2 |
4 |
6 |
8 |
10 |
12 |
|
|
IT(RMS), RMS ON-STATE CURRENT (AMP) |
|
|
||
2 |
Motorola Thyristor Device Data |
Loading...