MOTOROLA TIP110, TIP111, TIP112, TIP115, TIP116 Technical data

MOTOROLATIP127

SEMICONDUCTOR TECHNICAL DATA

Order this document by TIP120/D

Plastic Medium-Power

Complementary Silicon Transistors

. . . designed for general±purpose amplifier and low±speed switching applications.

• High DC Current Gain Ð

hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector±Emitter Sustaining Voltage Ð @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) Ð TIP120, TIP125

VCEO(sus) = 80 Vdc (Min) Ð TIP121, TIP126

VCEO(sus) = 100 Vdc (Min) Ð TIP122, TIP127

• Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

•Monolithic Construction with Built±In Base±Emitter Shunt Resistors

•TO±220AB Compact Package

*MAXIMUM RATINGS

NPN

TIP120* TIP121*

TIP122*

PNP

TIP125* TIP126* TIP127*

*Motorola Preferred Device

		TIP120,	TIP121,	TIP122,
Rating	Symbol	TIP125	TIP126	TIP127	Unit
Collector±Emitter Voltage	VCEO	60	80	100	Vdc
Collector±Base Voltage	VCB	60	80	100	Vdc
Emitter±Base Voltage	VEB		5.0		Vdc
Collector Current Ð Continuous	IC		5.0		Adc
Peak			8.0
Base Current	IB		120		mAdc
Total Power Dissipation @ TC = 25_C	PD		65		Watts
Derate above 25_C			0.52		W/_C
Total Power Dissipation @ TA = 25_C	PD		2.0		Watts
Derate above 25_C			0.016		W/_C
Unclamped Inductive Load Energy (1)	E		50		mJ
Operating and Storage Junction,	TJ, Tstg		± 65 to +150		_C
Temperature Range

THERMAL CHARACTERISTICS

	Characteristic						Symbol		Max	Unit
Thermal Resistance, Junction to Case							RθJC		1.92	_C/W
Thermal Resistance, Junction to Ambient							RθJA		62.5	_C/W
(1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω.
	TA	TC
	4.0	80
(WATTS)	3.0	60
DISSIPATION						TC
	2.0	40
, POWER	1.0	20				TA
D
P
	0	0	20	40	60	80	100	120	140	160
		0
					T, TEMPERATURE (°C)

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON POWER TRANSISTORS

60 ± 80 ± 100 VOLTS

65 WATTS

CASE 221A±06

TO±220AB

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1995

TIP120		TIP121	TIP122	TIP125	TIP126	TIP127
	ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
			Characteristic				Symbol	Min	Max	Unit
	OFF CHARACTERISTICS
	Collector±Emitter Sustaining Voltage (1)						VCEO(sus)			Vdc
	(IC = 100 mAdc, IB = 0)				TIP120, TIP125			60	Ð
					TIP121, TIP126			80	Ð
					TIP122, TIP127			100	Ð
	Collector Cutoff Current						ICEO			mAdc
	(VCE = 30 Vdc, IB = 0)				TIP120, TIP125			Ð	0.5
	(VCE = 40 Vdc, IB = 0)				TIP121, TIP126			Ð	0.5
	(VCE = 50 Vdc, IB = 0)				TIP122, TIP127			Ð	0.5
	Collector Cutoff Current						ICBO			mAdc
	(VCB = 60 Vdc, IE = 0)				TIP120, TIP125			Ð	0.2
	(VCB = 80 Vdc, IE = 0)				TIP121, TIP126			Ð	0.2
	(VCB = 100 Vdc, IE = 0)				TIP122, TIP127			Ð	0.2
	Emitter Cutoff Current						IEBO	Ð	2.0	mAdc
	(VBE = 5.0 Vdc, IC = 0)
	ON CHARACTERISTICS (1)
	DC Current Gain						hFE			Ð
	(IC = 0.5 Adc, VCE = 3.0 Vdc)							1000	Ð
	(IC = 3.0 Adc, VCE = 3.0 Vdc)							1000	Ð
	Collector±Emitter Saturation Voltage						VCE(sat)			Vdc
	(IC = 3.0 Adc, IB = 12 mAdc)							Ð	2.0
	(IC = 5.0 Adc, IB = 20 mAdc)							Ð	4.0
	Base±Emitter On Voltage						VBE(on)	Ð	2.5	Vdc
	(IC = 3.0 Adc, VCE = 3.0 Vdc)
	DYNAMIC CHARACTERISTICS
	Small±Signal Current Gain						hfe	4.0	Ð	Ð
	(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
	Output Capacitance						Cob			pF
	(VCB = 10 Vdc, IE = 0, f = 0.1 MHz				TIP125, TIP126, TIP127			Ð	300
					TIP120, TIP121, TIP122			Ð	200

(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%.

	RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS	VCC
		± 30 V
	D1 MUST BE FAST RECOVERY TYPE, eg:
	1N5825 USED ABOVE IB ≈ 100 mA	RC
	MSD6100 USED BELOW IB ≈ 100 mA			SCOPE
	TUT

V2			R
approx			B
+ 8.0	V
	0	51	D1	≈ 8.0 k	≈ 120

V1

+ 4.0 V

approx

±12 V

μ

s

25

for td and tr, D1 is disconnected

tr, tf ≤ 10 ns

and V2 = 0

For NPN test circuit reverse all polarities.

DUTY CYCLE = 1.0%

Figure 2. Switching Times Test Circuit

	5.0						PNP
	3.0	ts
							NPN
	2.0
μs)	1.0					tf
	0.7
(
t, TIME	0.5
	0.3
								tr
	0.2	VCC = 30 V
		IC/IB = 250
	0.1	IB1 = IB2
	0.07	TJ = 25°C			td @ VBE(off) = 0
	0.05
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

2	Motorola Bipolar Power Transistor Device Data

										TIP120		TIP121		TIP122	TIP125		TIP126	TIP127
		1.0
TRANSIENT THERMAL RESISTANCE		0.7		D = 0.5
		0.5
		0.3		0.2
	(NORMALIZED)	0.2
		0.1		0.1							ZθJC(t) = r(t) RθJC			P(pk)
		0.07		0.05							RθJC = 1.92°C/W MAX
											D CURVES APPLY FOR POWER
		0.05
				0.02							PULSE TRAIN SHOWN				t1
		0.03									READ TIME AT t1					t
											TJ(pk) ± TC = P(pk) ZθJC(t)					2
		0.02													DUTY CYCLE, D = t1/t2
r(t),			0.01
					SINGLE PULSE
		0.01
		0.01		0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1.0 k

t, TIME (ms)

Figure 4. Thermal Response

	20
	10									100 μs
(AMP)
	5.0						500 μs
CURRENT	2.0		TJ = 150°C				dc
	1.0		BONDING WIRE LIMITED
			THERMALLY LIMITED					1 ms
, COLLECTOR	0.5
			@ TC = 25°C (SINGLE PULSE)						5 ms
	0.2		SECOND BREAKDOWN LIMITED
			CURVES APPLY BELOW
	0.1		RATED VCEO
C	0.05						TIP120, TIP125
I
							TIP121, TIP126
	0.02						TIP122, TIP127
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Active±Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown

10,000											300
GAIN	5000																	TJ = 25°C
	3000										200
	2000
,SMALL±SIGNAL CURRENT	1000
	500		TC = 25°C								100					Cob
	300
			VCE = 4.0 Vdc
	200
	100		IC = 3.0 Adc								70				Cib
	50										50		PNP
	30
			PNP								(pF)CAPACITANCEC,		NPN
fe	20
			NPN
h	10
											30
	1.0	2.0	5.0	10	20	50	100	200	500	1000	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100

f, FREQUENCY (kHz)	VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Small±Signal Current Gain	Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

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