Mitsubishi Electric Corporation Semiconductor Group FU-68SDF-810M9B, FU-68SDF-810M95B, FU-68SDF-810M93B, FU-68SDF-810M91B, FU-68SDF-810M89B Datasheet

MITSUBISHI (OPTICAL DEVICES)

FU-68SDF-V810MxxB

1.55 μm DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL

(WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)

DESCRIPTION

Module type FU-68SDF-V810MxxB is a 1.55μm DFBLD module with single-mode optical fiber.

This module is suitable to a directly modulated light source for use in 2.5Gb/s digital optical communication systems.

This module is prepared in accordance with ITU-T recommendation wavelength channel plan for DenseWDM transmission.

FEATURES

Multi quantum wells (MQW) DFB Laser Diode module

Input impedance is 25Ω

Emission wavelength is in 1.55μm band High-speed response

Built-in optical isolator Built-in thermal electric cooler Butterfly package

With photodiode for optical output monitor

APPLICATION

High speed transmission systems (~2.5Gb/s)

Dense-WDM systems

ABSOLUTE MAXIMUM RATINGS (Tld=Tset)

Parameter		Symbol	Conditions	Rating	Unit
Laser diode	Optical output	Pf	CW	15	mW
	power
	Forward current	If	CW	150	mA
	Reverse voltage	Vrl		2	V
Photodiode	Reverse voltage	Vrd		20	V
	Forward current	Ifd		2	mA
Thermo-	Cooler current	Ipe		1.3	A
electric cooler	Cooler voltage	Vpe		3.1	V
(Note)
Operating case temperature		Tc		-20 ~ 70	°C
Storage temperature		Tstg		-40 ~ 85	°C

Note) Even if the thermo-electric cooler (TEC) is operated within the rated conditions, uncontrolled current loading or operation without heatsink may easily damage the module by exceeding the storage temperature range. Thermistor resistance should be properly monitored by the feedback circuit during TEC operation to avoid the catastrophic damage.

MITSUBISHI (OPTICAL DEVICES)

FU-68SDF-V810MxxB

1.55 μm DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL

(WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)

ELECTRICAL/OPTICAL CHARACTERISTICS (Tld=Tset, Tc=25°C unless otherwise noted)

Parameter	Symbol		Test Conditions						Limits		Unit
								Min.	Typ.	Max.
Threshold current		Ith	CW					-	10	25	mA
Optical output power	Pth		CW, If=Ith					-	-	150	μ
at threshold current											W
Operating current	Iop		CW, Pf=10mW					-	50	95	mA
Operating voltage	Vop		CW, Pf=10mW					-	1.3	1.8	V
Input impedance		Zin	Pf=10mW					-	25	-	Ω
Light-emission central		λc	(Note 1)						(Note 2)		nm
wavelength
Central wavelength drift with	Δλ	c/ Tc	Tc=-20~70	°	C			-1	-	0	°
case temp.											pm/ C
Laser operating temperature	Tset		-					20	-	35	°C
Spectral width		Δλ	(Note 1), -20dB					-	0.2	0.4	nm
Side mode suppression ratio		Sr	(Note 1)					33	40	-	dB
Dispersion penalty		Pp	(Note 1), at 10-10 BER,					-	-	2	dB
			+1800ps/nm
Cutoff frequency		fc	Pf=10mW					3.5	-	-	GHz
(-1.5dB optical)
Rise and fall time	tr, tf		(Note 1)					-	-	150	psec
(10~90%)
Relative intensity noise		Nr	CW, Pf=10mW,					-	-155	-145	dB/Hz
			0.5~3GHz
Tracking error		Er	Tc=-20~70°C,					-	-	0.5	dB
(Note 3)			APC, ATC
Differential efficiency		η	CW, Pf=10mW					0.15	0.25	0.35	mW/
											mA
Linearity		Δη	CW, Pf=1~12mW,					-20	-	20	%
			(Note 4)
Monitor current	Imon		CW, Pf=10mW, Vrd=5V					0.2	-	3	mA
Optical isolation		Iso	Tc=25°C					35	-	-	dB
			Tc=-20~70°C					23	-	-
Dark current (PD)		Id	Vrd=5V, Tc=-20~70			°	C	-	-	0.1	μ
											A
Capacitance (PD)		Ct	Vrd=5V, f=1MHz					-	-	10	pF

Note 1) 2.48832Gb/s NRZ, 223-1, Pf_ave=5mW, Extinction ratio 10dB, optical return loss of the connectors should be greater than 40dB in order to ensure the specified performance.

Note 2) See Table 1.

Note 3) Er=max|10×log(Pf / Pf@25°C)|

Note 4) Variation of the differential efficiency from the straight line between 1mW and 10mW.