MITSUBISHI SEMICONDUCTOR 
GaAs FET
FA01219A
GaAs FET HYBRID IC
DESCRIPTION
FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio.
FEATURES
• Low voltage |
3.5V |
• High gain |
22.5B |
• High efficiency |
50% |
• High power |
30.5dBm |
APPLICATION
PDC0.8GHz
|
|
|
Unit:mm |
|
|
GND |
|
|
|
1 |
8 |
|
|
|
2 |
7 |
|
|
|
3 |
6 |
|
|
|
4 |
5 |
|
|
|
|
GND |
|
|
|
|
10.0 |
|
|
|
|
0.8 |
|
|
|
|
2.0 |
|
|
|
|
6.0 |
|
|
|
|
1 |
RF INPUT |
5 |
RF OUTPUT |
|
2 |
VD1 |
6 |
GND |
|
3 |
GND |
7 |
GND |
|
4 |
VD2 |
8 |
VG1,2 |
|
tolerance:±0.2 |
|
|
|
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Condition |
Tc |
Ratings |
Unit |
|
|
|
|
|
|
VD |
Drain voltage |
Po≤30.5dBm |
25˚C |
4.5 |
V |
Pin |
Input power |
ZG=ZL=50Ω |
25˚C |
15 |
dBm |
TC(op) |
Operation case temperature |
|
– |
-20 to +85 |
˚C |
Tstg |
Storage temperature |
|
– |
-30 to +90 |
˚C |
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
ELECTRICAL CHARACTERISTICS(Ta=25˚C)
Symbol |
Parameter |
|
Test conditions |
|
|
Limits |
|
Unit |
|
|
Min |
Typ |
Max |
||||
|
|
|
|
|
|
|||
f |
Frequency |
|
|
925 |
– |
958 |
MHz |
|
Pin |
Input power |
Po=30.5dBm |
|
|
– |
5 |
8 |
dBm |
IDt |
Total drain current |
|
|
– |
640 |
720 |
mA |
|
VD1=VD2=3.5V |
|
|
||||||
ρin |
Return loss |
VG1,2=-2.5V |
|
|
– |
– |
-6 |
dB |
|
|
ZG=ZL=50Ω |
|
|
|
|
|
|
ACP50 |
±50kHz adjacent channel power |
|
|
– |
– |
-47 |
dBc |
|
|
|
(π/4DQPSK) |
|
|
|
|
|
|
ACP100 |
±100kHz adjacent channel power |
|
|
– |
– |
-62 |
dBc |
|
2fo |
2nd harmonics |
Ditto |
|
|
– |
– |
-30 |
dBc |
3fo |
3rd harmonics |
(CW) |
|
|
– |
– |
-30 |
dBc |
Nov. ´97
MITSUBISHI SEMICONDUCTOR 
GaAs FET
FA01219A
GaAs FET HYBRID IC
TYPICAL CHARACTERISTICS 1
VD1=3.5V,VD2=3.5V,VG=-2.5V
Frequency |
Pin |
Po |
Id1 |
Id2 |
Idt |
Ig1,2 |
-50k |
+50k |
-100k |
+100k |
2SP |
3SP |
RL |
(MHz) |
(dBm) |
(dBm) |
(mA) |
(mA) |
(mA) |
(mA) |
(dBc) |
(dBc) |
(dBc) |
(dBc) |
(dBc) |
(dBc) |
(dB) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
925.0 |
5.78 |
30.5 |
93 |
552 |
644 |
-1.86 |
-49.9 |
-49.2 |
-62.5 |
-62.6 |
-37.5 |
-49.2 |
-10.7 |
941.5 |
6.05 |
30.5 |
90 |
547 |
637 |
-1.86 |
-51.7 |
-51.2 |
-63.6 |
-64.1 |
-37.4 |
-49.7 |
-9.4 |
958.0 |
6.52 |
30.5 |
91 |
543 |
634 |
-1.86 |
-51.6 |
-51.6 |
-64.4 |
-64.6 |
-37.2 |
-50.2 |
-8.5 |
PO,ACP vs Pin CHARACTERISTICS
35 |
f=925MHz |
|
|
-30 |
|
|
|
|
|
|
VD1=3.5V |
|
|
|
30 |
VD2=3.5V |
|
|
-40 |
VG=-2.5V |
|
|
||
|
|
PO |
|
|
|
|
|
|
|
25 |
|
|
ACP+50k |
-50 |
|
|
|
||
|
|
|
ACP-50k |
|
20 |
|
|
ACP+100k |
-60 |
|
|
|
|
|
15 |
|
|
ACP-100k |
-70 |
10 |
|
0.0 |
5.0 |
-80 |
-5.0 |
10.0 |
|||
|
|
|
Pin(dBm) |
|
PO,IDs vs Pin CHARACTERSTICS
35 |
|
|
1000 |
|
|
|
900 |
30 |
|
PO |
800 |
|
|
|
700 |
25 |
|
IDt |
600 |
|
|
|
500 |
|
|
|
ID2 |
20 |
|
|
400 |
|
|
|
300 |
15 |
|
|
200 |
|
|
ID1 |
100 |
|
|
|
|
10 |
|
|
0 |
-5 |
0 |
5 |
10 |
|
|
Pin(dBm) |
|
Nov. ´97
Loading...