Mitsubishi Electric Corporation Semiconductor Group FX50KMJ-06 Datasheet

PRELIMINARYlimits
				. .
			specification		change
				to
		afinal		subject
is	not	are
This
Notice:parametric
Some

MITSUBISHI Pch POWER MOSFET

FX50KMJ-06

HIGH-SPEED SWITCHING USE

FX50KMJ-06
• 4V DRIVE
• VDSS ...............................................................	–60V
• rDS (ON) (MAX) .............................................	18.9mΩ
• ID ....................................................................	–50A
• Integrated Fast Recovery Diode (TYP.) ...........	70ns
• Viso ................................................................................	2000V

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

OUTLINE DRAWING					Dimensions in mm
	10 ± 0.3				2.8 ± 0.2
	0.3			± 0.3
± 0.3	3 ±			φ 3.26.5	± 0.2
15
14 ± 0.5	0.3
	3.6 ±		1.1 ± 0.2
			1.1 ± 0.2		E
			0.75 ± 0.15
					0.75 ± 0.15
2.54 ± 0.25			2.54 ± 0.25
	1	2	3		± 0.2
					4.5
			0.2
		3	±
			2.6
				1 GATE
1				2 DRAIN
				3 SOURCE
		2
			TO-220FN

MAXIMUM RATINGS (Tc = 25°C)

Symbol	Parameter	Conditions	Ratings	Unit
VDSS	Drain-source voltage	VGS = 0V	–60	V
VGSS	Gate-source voltage	VDS = 0V	±20	V
ID	Drain current		–50	A
IDM	Drain current (Pulsed)		–200	A
IDA	Avalanche drain current (Pulsed)	L = 50μH	–50	A
IS	Source current		–50	A
ISM	Source current (Pulsed)		–200	A
PD	Maximum power dissipation		35	W
Tch	Channel temperature		–55 ~ +150	°C
Tstg	Storage temperature		–55 ~ +150	°C
Viso	Isolation voltage	AC for 1minute, Terminal to case	2000	V
—	Weight	Typical value	2.0	g

Jan.1999

PRELIMINARYlimits
				. .
			specification		change
				to
		afinal		subject
is	not	are
This
Notice:parametric
Some

MITSUBISHI Pch POWER MOSFET

FX50KMJ-06

HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

	Symbol	Parameter	Test conditions		Limits		Unit
				Min.	Typ.	Max.
	V (BR) DSS	Drain-source breakdown voltage	ID = –1mA, VGS = 0V	–60	—	—	V
	IGSS	Gate-source leakage current	VGS = ±20V, VDS = 0V	—	—	±0.1	mA
	IDSS	Drain-source leakage current	VDS = –60V, VGS = 0V	—	—	–0.1	mA
	VGS (th)	Gate-source threshold voltage	ID = –1mA, VDS = –10V	–1.3	–1.8	–2.3	V
	rDS (ON)	Drain-source on-state resistance	ID = –25A, VGS = –10V	—	15.0	18.9	mW
	rDS (ON)	Drain-source on-state resistance	ID = –25A, VGS = –4V	—	23	32	mW
	VDS (ON)	Drain-source on-state voltage	ID = –25A, VGS = –10V	—	–0.38	–0.47	V
	½yfs½	Forward transfer admittance	ID = –25A, VDS = –10V	—	49	—	S
	Ciss	Input capacitance		—	11610	—	pF
	Coss	Output capacitance	VDS = –10V, VGS = 0V, f = 1MHz	—	1355	—	pF
	Crss	Reverse transfer capacitance		—	687	—	pF
	td (on)	Turn-on delay time		—	73	—	ns
	tr	Rise time	VDD = –30V, ID = –25A, VGS = –10V, RGEN = RGS = 50W	—	137	—	ns
	td (off)	Turn-off delay time		—	822	—	ns
	tf	Fall time		—	320	—	ns
	VSD	Source-drain voltage	IS = –25A, VGS = 0V	—	–1.0	–1.5	V
	Rth (ch-c)	Thermal resistance	Channel to case	—	—	3.57	°C/W
	trr	Reverse recovery time	IS = –50A, dis/dt = 100A/ms	—	70	—	ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

		50
	D (W)	40
	P
	DISSIPATION	30
	POWER	20
		10

	0	0	50	100		150	200
			CASE TEMPERATURE			TC (°C)
			OUTPUT CHARACTERISTICS
				(TYPICAL)
	–100		VGS =
			–10V			–5V
ID (A)
	–80
CURRENT	–60			–6V
				–8V
						–4V
	–40					Tc = 25°C
DRAIN
						Pulse Test
	–20					–3V
	0			PD = 35W
		0	–1.0	–2.0	–3.0	–4.0	–5.0

MAXIMUM SAFE OPERATING AREA

	–3			tw =
	–2
				10μs
	–102
(A)
	–7			100μs
	–5
ID
	–3
CURRENT
	–2			1ms
	–101
	–7			10ms
	–5	TC = 25°C
DRAIN	–3	Single Pulse		100ms
	–2
	–100
	–7			DC
	–5
	–3		–2 –3 –5–7–101	–2 –3 –5–7–102	–2
	–2 –3 –5–7–100

DRAIN-SOURCE VOLTAGE VDS (V)

		OUTPUT CHARACTERISTICS
			(TYPICAL)
	–50	VGS =
(A)	–40	–10V	–4V
		–8V
ID
		–6V
CURRENT
	–30	–5V
			PD = 35W
	–20
DRAIN			–3V
	–10

Tc = 25°C

Pulse Test

00

–0.4

–0.8

–1.2

–1.6

–2.0

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN-SOURCE VOLTAGE VDS (V)

Jan.1999