MITSUBISHI <MOSFET MODULE>
FM600TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
FM600TU-07A
● ID(rms) .......................................................... |
300A |
● VDSS ............................................................... |
75V |
● Insulated Type
● 6-elements in a pack
● Thermistor inside
● UL Recognized
Yellow Card No.E80276
File No.E80271
APPLICATION
AC motor control of forklift (battery power source), UPS
OUTLINE DRAWING & CIRCUIT DIAGRAM |
Dimensions in mm |
6.5
(17.5) |
(6) |
|
22.75 |
4-φ6.5 MOUNTING HOLES
(14.5) |
(6) |
7-M6NUTS
110
97±0.25
15.270.9
16.5 |
16 |
32 |
|
16 |
|
36 |
|
|
36 |
10 |
|
|
10 |
|
|
30 |
|
|
30 |
7 |
|
|
7 |
|
|
|
P |
N |
|
(15.8) |
|
|
|
|
3 6.5 |
|
|
|
|
7 |
1 |
|
|
13 |
|
6.5 |
|
|
14 |
|
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|
3 |
|
|
9.2 5- |
38 |
|
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|
(8.7) |
||
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12 |
6 |
|
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|
U |
|
V |
W |
14 |
|
14 |
|
14 |
20 |
|
20 |
|
20 |
16.5 |
32 |
|
32 |
|
|
|
|
|
|
|
35 ±1.0 |
|
|
|
|
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|
26 0.51.0 |
|
|
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|
6.5 |
|
|
(6) |
(14.5) |
4 |
|
|
11.5 |
|
|
|
22.57 |
|
|
|
|
3.96 |
9.1 |
67 ±0.25 |
75 |
80 |
90 |
A B E L |
|
|
|
|
|
|
L |
14
(SCREWING DEPTH)
A 
B 
25
4
CIRCUIT DIAGRAM
P |
|
|
(7)GUP |
(8)GVP |
(9)GWP |
(1)SUP |
(2)SVP |
(3)SWP |
Tc measured point
Housing Type of A and B
(Tyco Electronics P/N:)
A:917353-1
B:179838-1
U |
V |
W |
(13) |
(1)SUP |
(2)SVP |
(3)SWP |
(4)SUN |
(5)SVN |
(6)SWN |
|
|
|
|
(7)GUP |
(8)GVP |
(9)GWP |
(10)GUN |
(11)GVN |
A |
(10)GUN |
(11)GVN |
(12)GWN |
|
(12)GWN |
|||||
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(4)SUN |
(5)SVN |
(6)SWN |
(14) |
(13)TH1 |
(14)TH2 |
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B |
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|
N
May 2006
MITSUBISHI <MOSFET MODULE>
FM600TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
VDSS |
Drain-source voltage |
G-S Short |
75 |
V |
|
VGSS |
Gate-source voltage |
D-S Short |
±20 |
V |
|
ID |
Drain current |
TC’ = 139°C*3 |
300 |
A |
|
IDM |
Pulse*2 |
600 |
A |
||
|
|||||
IDA |
Avalanche current |
L = 10 H Pulse*2 |
300 |
A |
|
IS*1 |
Source current |
|
300 |
A |
|
ISM*1 |
Pulse*2 |
600 |
A |
||
|
|||||
PD*4 |
Maximum power dissipation |
TC = 25°C |
960 |
W |
|
PD*4 |
TC’ = 25°C*3 |
1300 |
W |
||
|
|||||
Tch |
Channel temperature |
|
–40 ~ +150 |
°C |
|
Tstg |
Storage temperature |
|
–40 ~ +125 |
°C |
|
Viso |
Isolation voltage |
Main terminal to base plate, AC 1 min. |
2500 |
V |
|
— |
Mounting torque |
Main Terminal M6 |
3.5 ~ 4.5 |
N • m |
|
Mounting M6 |
3.5 ~ 4.5 |
N • m |
|||
|
|
||||
— |
Weight |
Typical value |
600 |
g |
ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)
Symbol |
Item |
Conditions |
|
|
Limits |
|
Unit |
||
|
Min. |
Typ. |
Max. |
||||||
|
|
|
|
|
|
||||
IDSS |
Drain cutoff current |
VDS = VDSS, VGS = 0V |
|
— |
— |
1 |
mA |
||
VGS(th) |
Gate-source threshold voltage |
ID = 30mA, VDS = 10V |
|
4.7 |
6 |
7.3 |
V |
||
IGSS |
Gate leakage current |
VGS = VGSS, VDS = 0V |
|
— |
— |
1.5 |
A |
||
rDS(ON) |
Static drain-source |
ID = 300A |
|
Tch = 25°C |
— |
0.53 |
0.73 |
mΩ |
|
(chip) |
On-state resistance |
VGS = 15V |
|
Tch = 125°C |
— |
0.87 |
— |
||
|
|
||||||||
VDS(ON) |
Static drain-source |
ID = 300A |
|
Tch = 25°C |
— |
0.16 |
0.22 |
V |
|
(chip) |
On-state voltage |
VGS = 15V |
|
Tch = 125°C |
— |
0.26 |
— |
||
|
|
||||||||
R(lead) |
Lead resistance |
ID = 300A |
|
Tch = 25°C |
— |
0.7 |
— |
mΩ |
|
terminal-chip |
|
Tch = 125°C |
— |
1.0 |
— |
||||
|
|
|
|
||||||
Ciss |
Input capacitance |
VDS = 10V |
|
— |
— |
110 |
|
||
Coss |
Output capacitance |
|
— |
— |
15 |
nF |
|||
VGS = 0V |
|
||||||||
Crss |
Reverse transfer capacitance |
|
— |
— |
10 |
|
|||
|
|
|
|
||||||
QG |
Total gate charge |
VDD = 48V, ID = 300A, VGS = 15V |
|
— |
1650 |
— |
nC |
||
td(on) |
Turn-on delay time |
|
|
|
— |
— |
450 |
|
|
|
|
|
|
|
|
|
|
|
|
tr |
Turn-on rise time |
VDD = 48V, ID = 300A, VGS1 = VGS2 = 15V |
|
— |
— |
600 |
ns |
||
|
|
|
|
|
|
||||
td(off) |
Turn-off delay time |
|
— |
— |
600 |
||||
RG = 4.2Ω, Inductive load switching operation |
|
||||||||
|
|
|
|
|
|
||||
tf |
Turn-off fall time |
— |
— |
600 |
|
||||
IS = 300A |
|
|
|||||||
trr*1 |
Reverse recovery time |
|
— |
— |
200 |
ns |
|||
|
|
|
|||||||
Qrr*1 |
Reverse recovery charge |
|
|
|
— |
4.8 |
— |
C |
|
VSD*1 |
Source-drain voltage |
IS = 300A, VGS = 0V |
|
— |
— |
1.3 |
V |
||
Rth(ch-c) |
Thermal resistance |
MOSFET part (1/6 module)*7 |
|
— |
— |
0.13 |
|
||
Rth(ch-c’) |
MOSFET part (1/6 module)*3 |
|
— |
— |
0.096 |
°C/W |
|||
|
|
||||||||
Rth(c-f) |
Contact thermal resistance |
Case to fin, Thermal grease Applied*8 (1/6 module) |
— |
0.1 |
— |
||||
|
|||||||||
Rth(c’-f’) |
Case to fin, Thermal grease Applied*3, *8 (1/6 module) |
— |
0.09 |
— |
|
||||
|
|
||||||||
THERMISTOR PART
Symbol |
Parameter |
Conditions |
|
Limits |
|
Unit |
|
Min. |
Typ. |
Max. |
|||||
|
|
|
|
||||
RTH*6 |
Resistance |
TTH = 25°C*5 |
— |
100 |
— |
kΩ |
|
B*6 |
B Constant |
Resistance at TTH = 25°C, 50°C*5 |
— |
4000 |
— |
K |
*1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
*2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.
*4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTH is thermistor temperature.
*6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K) *7: TC measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”.
May 2006
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