Mitsubishi Electric Corporation Semiconductor Group FK20SM-10 Datasheet

MITSUBISHI Nch POWER MOSFET

FK20SM-10

HIGH-SPEED SWITCHING USE

FK20SM-10		OUTLINE DRAWING		Dimensions in mm
		15.9MAX.		4.5
					1.5
			r
			5.0	20.0
		φ 3.2
			2
		2		4
					4.4
				19.5MIN.
		1.0
		q w	e
		5.45	5.45	0.6	2.8
		4
		w r
				q GATE
¡VDSS	500V	q		w DRAIN
				e SOURCE
	0.36Ω
¡rDS (ON) (MAX)				r DRAIN
¡ID .........................................................................................	20A	e
¡Integrated Fast Recovery Diode (MAX.) ........	150ns		TO-3P

APPLICATION

Servo motor drive, Robot, UPS, Inverter Fluorecent

lamp, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol	Parameter	Conditions	Ratings	Unit
VDSS	Drain-source voltage	VGS = 0V	500	V
VGSS	Gate-source voltage	VDS = 0V	±30	V
ID	Drain current		20	A
IDM	Drain current (Pulsed)		60	A
IS	Source current		20	A
ISM	Source current (Pulsed)		60	A
PD	Maximum power dissipation		275	W
Tch	Channel temperature		–55 ~ +150	°C
Tstg	Storage temperature		–55 ~ +150	°C
—	Weight	Typical value	4.8	g

Feb.1999

MITSUBISHI Nch POWER MOSFET

FK20SM-10

HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

	Symbol	Parameter	Test conditions		Limits		Unit
				Min.	Typ.	Max.
	V (BR) DSS	Drain-source breakdown voltage	ID = 1mA, VGS = 0V	500	—	—	V
	V (BR) GSS	Gate-source breakdown voltage	IG = ±100mA, VDS = 0V	±30	—	—	V
	IGSS	Gate-source leakage current	VGS = ±25V, VDS = 0V	—	—	±10	mA
	IDSS	Drain-source leakage current	VDS = 500V, VGS = 0V	—	—	1	mA
	VGS (th)	Gate-source threshold voltage	ID = 1mA, VDS = 10V	2	3	4	V
	rDS (ON)	Drain-source on-state resistance	ID = 10A, VGS = 10V	—	0.28	0.36	W
	VDS (ON)	Drain-source on-state voltage	ID = 10A, VGS = 10V	—	2.80	3.60	V
	½yfs½	Forward transfer admittance	ID = 10A, VDS = 10V	7.0	10.0	—	S
	Ciss	Input capacitance		—	2800	—	pF
	Coss	Output capacitance	VDS = 25V, VGS = 0V, f = 1MHz	—	350	—	pF
	Crss	Reverse transfer capacitance		—	55	—	pF
	td (on)	Turn-on delay time		—	60	—	ns
	tr	Rise time	VDD = 200V, ID = 10A, VGS = 10V, RGEN = RGS = 50W	—	80	—	ns
	td (off)	Turn-off delay time		—	270	—	ns
	tf	Fall time		—	80	—	ns
	VSD	Source-drain voltage	IS = 10A, VGS = 0V	—	1.5	2.0	V
	Rth (ch-c)	Thermal resistance	Channel to case	—	—	0.45	°C/W
	trr	Reverse recovery time	IS = 20A, dis/dt = –100A/ms	—	—	150	ns

PERFORMANCE CURVES

POWER DISSIPATION PD (W)

POWER DISSIPATION DERATING CURVE

300

250

200

150

100

50

0

0

50

100

150

200

MAXIMUM SAFE OPERATING AREA

	102
	7
	5
(A)	3						tw=100µs
	2
ID	101
CURRENT
	7						1ms
	5
	3
	2						10ms
	100
DRAIN							100ms
	7
	5	TC = 25°C					DC
	3
		Single Pulse
	2
	10–1	2 3	5 7 101	2 3	5 7 102	2 3	5 7 103
	100

CASE TEMPERATURE TC (°C)

DRAIN-SOURCE VOLTAGE VDS (V)

Feb.1999