BCR20E
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
APPLICATION
Contactless AC switches, light dimmer,
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,
solid state relay
BCR20A, BCR20B, BCR20C, BCR20E
✽1. Gate open.
Symbol
I
T (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Conditions Unit
A
A
A
2
s
W
W
V
A
°C
°C
Ratings
20
220
203
5.0
0.5
10
2.0
–20 ~ +125
–20 ~ +125
Commercial frequency, sine full
wave, 360° conduction
BCR20A, B, C
BCR20E
T
c=98°C
T
b=64°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
•IT (RMS) ......................................................................20A
•V
DRM ..............................................................400V/500V
•I
FGT !, IRGT !, IRGT # ...........................................30mA
Symbol
V
DRM
VDSM
Parameter
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
600
12
500
700
2
1
3
φ2.0 MIN
1
3
3 MAX
φ8.7 MAX
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
OUTLINE DRAWING
Dimensions
in mm
BCR20A
φ11 MAX
9 MAX
24 MAX
17.5 MAX
2
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Conditions
BCR20A
BCR20B
BCR20C
BCR20E
BCR20A only, 10 sec.
BCR20C only
BCR20E only, T
a=25°C, AC 1 minute, T2 terminal to base
Symbol
—
—
—
V
iso
Parameter
Weight (Typical value)
Soldering temperature
Mounting torque
Isolated voltage
Ratings
3.5
9.0
9.0
11
230
30
2.94
1500
Unit
g
°C
kg·cm
N·m
V
Symbol
I
DRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Rth (j-b)
(dv/dt)c
Test conditions
T
j=125°C, VDRM applied
T
c=25°C, Tb=25°C (BCR20E only), ITM=30A, Instantaneous
measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
Junction to case (BCR20A, BCR20B, BCR20C)
Junction to base (BCR20E)
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
✽2
Gate trigger current
✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
—
✽3
Max.
3.0
1.5
1.5
1.5
1.5
30
30
30
—
1.1
2.4
—
Test conditions
Voltage
class
8
10
V
DRM
(V)
400
600
Min.
—
10
—
10
Commutating voltage and current waveforms
(inductive load)
(dv/dt) c
Symbol
R
L
R
L
Unit
V/µs
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c=–10A/ms
3. Peak off-state voltage
V
D=400V
ELECTRICAL CHARACTERISTICS
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
Loading...