MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
INSULATED TYPE |
CM1600HC-34H
● IC ................................................................ |
1600A |
● VCES ....................................................... |
1700V |
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM |
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Dimensions in mm |
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130 |
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114 |
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57± 0.25 |
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57± 0.25 |
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4 - M8 NUTS |
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C |
C |
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C |
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20 |
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C |
C |
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124± 0.25 |
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G |
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140 |
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30 |
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E |
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CM |
E |
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E |
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E |
E |
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E |
G |
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CIRCUIT DIAGRAM |
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C |
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16.5 |
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6 - φ |
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3 - M4 NUTS |
2.5 |
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7 MOUNTING HOLES |
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18.5 |
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5 |
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61.5 |
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screwing depth |
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35 |
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min. 11.7 |
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11 |
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screwing depth |
18 |
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14.5 |
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min. 7.7 |
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+1 |
0 |
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+1 |
0 |
LABEL |
31.5 |
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5 |
38 |
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28 |
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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
HIGH POWER SWITCHING USE |
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INSULATED TYPE |
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MAXIMUM RATINGS |
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Symbol |
Item |
Conditions |
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Ratings |
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Unit |
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VCES |
Collector-emitter voltage |
VGE = 0V, Tj = 25° C |
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1700 |
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V |
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VGES |
Gate-emitter voltage |
VCE = 0V, Tj = 25° C |
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± 20 |
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V |
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IC |
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Collector current |
TC = 80° C |
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1600 |
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A |
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ICM |
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Pulse |
(Note 1) |
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3200 |
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A |
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IE |
(Note 2) |
Emitter current |
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1600 |
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A |
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IEM (Note 2) |
Pulse |
(Note 1) |
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3200 |
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A |
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PC (Note 3) |
Maximum power dissipation |
TC = 25° C, IGBT part |
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12500 |
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W |
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Tj |
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Junction temperature |
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–40 ~ +150 |
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° C |
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Top |
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Operating temperature |
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–40 ~ +125 |
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° C |
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Tstg |
Storage temperature |
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–40 ~ +125 |
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° C |
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Viso |
Isolation voltage |
RMS, sinusoidal, f = 60Hz, t = 1min. |
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4000 |
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V |
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tpsc |
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Maximum short circuit pulse |
VCC = 1150V, VCES ≤ 1700V, VGE = 15V |
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10 |
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µ s |
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width |
Tj = 125° C |
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ELECTRICAL CHARACTERISTICS |
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Symbol |
Item |
Conditions |
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Limits |
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Unit |
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Min |
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Typ |
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Max |
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ICES |
Collector cut-off current |
VCE = VCES, VGE = 0V, Tj = 25° C |
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— |
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— |
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24 |
mA |
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VGE(th) |
Gate-emitter |
IC = 160mA, VCE = 10V, Tj = 25° C |
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4.5 |
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5.5 |
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6.5 |
V |
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threshold voltage |
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IGES |
Gate leakage current |
VGE = VGES, VCE = 0V, Tj = 25° C |
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— |
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— |
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0.5 |
µ A |
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VCE(sat) |
Collector-emitter |
IC = 1600A, VGE = 15V, Tj = 25° C |
(Note 4) |
— |
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2.60 |
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3.30 |
V |
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saturation voltage |
IC = 1600A, VGE = 15V, Tj = 125° C |
(Note 4) |
— |
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3.10 |
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— |
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Cies |
Input capacitance |
VCE = 10V, f = 100kHz |
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— |
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140 |
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nF |
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Coes |
Output capacitance |
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— |
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20.0 |
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— |
nF |
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VGE = 0V, Tj = 25° C |
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Cres |
Reverse transfer capacitance |
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— |
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7.6 |
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— |
nF |
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Qg |
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Total gate charge |
VCC = 850V, IC = 1600A, VGE = 15V, Tj = 25° C |
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— |
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13.2 |
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— |
µ C |
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VEC (Note 2) |
Emitter-collector voltage |
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IE = 1600A, VGE = 0V, Tj = 25° C |
(Note 4) |
— |
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2.30 |
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3.00 |
V |
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IE = 1600A, VGE = 0V, Tj = 125° C |
(Note 4) |
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1.85 |
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— |
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td(on) |
Turn-on delay time |
VCC = 850V, IC = 1600A, VGE = ± 15V |
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— |
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1.60 |
µ s |
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tr |
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Turn-on rise time |
RG(on) = 1.6Ω , Tj = 125° C, Ls = 100nH |
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— |
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— |
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1.30 |
µ s |
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Eon |
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Turn-on switching energy |
Inductive load |
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— |
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540 |
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— |
mJ/pulse |
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td(off) |
Turn-off delay time |
VCC = 850V, IC = 1600A, VGE = ± 15V |
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— |
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— |
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2.70 |
µ s |
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tf |
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Turn-off fall time |
RG(off) = 1.6Ω , Tj = 125° C, Ls = 100nH |
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— |
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— |
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0.80 |
µ s |
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Eoff |
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Turn-off switching energy |
Inductive load |
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— |
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580 |
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mJ/pulse |
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trr |
(Note 2) |
Reverse recovery time |
VCC = 850V, IC = 1600A, VGE = ± 15V |
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— |
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— |
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2.70 |
µ s |
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Qrr |
(Note 2) |
Reverse recovery charge |
RG(on) = 1.6Ω , Tj = 125° C, Ls = 100nH |
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— |
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420 |
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µ C |
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Erec(Note 2) |
Reverse recovery energy |
Inductive load |
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— |
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220 |
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mJ/pulse |
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Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125° C).
2.The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3.Junction temperature (Tj) should not exceed Tjmax rating (150° C).
4.Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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