MITSUBISHI IGBT MODULES
CM600HU-24H
HIGH POWER SWITCHING USE INSULATED TYPE
2 - M4 NUTS |
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A |
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2 - M8 NUTS |
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B |
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E |
H |
K |
L |
N(4 - Mounting |
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Holes) |
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J |
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F |
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C |
G |
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G |
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D |
E |
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E |
C |
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CM |
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TC Measured Point |
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M
P
E |
C |
E
G
Outline Drawing and Circuit Diagram
Dimensions |
Inches |
Millimeters |
A |
4.33 |
110.0 |
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B |
3.66±0.01 |
93.0±0.25 |
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C |
3.15 |
80.0 |
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D |
2.44±0.01 |
62.0±0.25 |
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E |
0.53 |
13.5 |
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F |
0.37 |
9.5 |
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G |
0.57 |
14.5 |
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Dimensions |
Inches |
Millimeters |
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H |
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0.96 |
24.5 |
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J |
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0.22 |
5.5 |
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K |
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1.14 |
29.0 |
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L |
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0.85 |
21.5 |
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M |
1.34 +0.04/-0.02 |
34 +1.0/-0.5 |
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N |
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0.26 Dia. |
6.5 Dia. |
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P |
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1.02 +0.04/-0.02 26 +1.0/-0.5 |
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Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy Heat Sinking
Applications:
uAC Motor Control
uMotion/Servo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM600HU-24H is a
1200V (VCES), 600 Ampere Single IGBT Module.
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Current Rating |
VCES |
Type |
Amperes |
Volts (x 50) |
CM |
600 |
24 |
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Sep.1998
MITSUBISHI IGBT MODULES
CM600HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings |
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Symbol |
CM600HU-24H |
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Units |
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Junction Temperature |
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Tj |
-40 to 150 |
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°C |
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Storage Temperature |
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Tstg |
-40 to 125 |
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°C |
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Collector-Emitter Voltage (G-E SHORT) |
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VCES |
1200 |
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Volts |
Gate-Emitter Voltage (C-E SHORT) |
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VGES |
±20 |
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Volts |
Collector Current (Tc = 25°C) |
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IC |
600 |
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Amperes |
Peak Collector Current (Tj ≤ 150°C) |
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ICM |
1200* |
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Amperes |
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Emitter Current** (Tc = 25°C) |
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IE |
600 |
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Amperes |
Peak Emitter Current** |
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IEM |
1200* |
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Amperes |
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Maximum Collector Dissipation (Tc = 25°C) |
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Pc |
3100 |
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Watts |
Mounting Torque, M8 Main Terminal |
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– |
8.8~10.8 |
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N · m |
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Mounting Torque, M6 Mounting |
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– |
3.5~4.5 |
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N · m |
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Mounting Torque, M4 Terminal |
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– |
1.3~1.7 |
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N · m |
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Weight |
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– |
600 |
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Grams |
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Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) |
Viso |
2500 |
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Vrms |
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* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. |
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**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). |
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Static Electrical Characteristics, Tj = 25 °C unless otherwise specified |
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Characteristics |
Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
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Collector-Cutoff Current |
ICES |
VCE = VCES, VGE = 0V |
– |
– |
2 |
mA |
Gate Leakage Voltage |
IGES |
VGE = VGES, VCE = 0V |
– |
– |
0.5 |
μA |
Gate-Emitter Threshold Voltage |
VGE(th) |
IC = 60mA, VCE = 10V |
4.5 |
6 |
7.5 |
Volts |
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 600A, VGE = 15V, Tj = 25°C |
– |
2.9 |
3.7 |
Volts |
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IC = 600A, VGE = 15V, Tj = 125°C |
– |
2.85 |
– |
Volts |
Total Gate Charge |
QG |
VCC = 600V, IC = 600A, VGE = 15V |
– |
2250 |
– |
nC |
Emitter-Collector Voltage* |
VEC |
IE = 600A, VGE = 0V |
– |
– |
3.2 |
Volts |
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics |
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Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
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Input Capacitance |
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Cies |
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– |
– |
90 |
nF |
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Output Capacitance |
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Coes |
VCE = 10V, VGE = 0V |
– |
– |
31.5 |
nF |
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Reverse Transfer Capacitance |
Cres |
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– |
– |
18 |
nF |
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Resistive |
Turn-on Delay Time |
td(on) |
VCC = 600V, IC = 600A, |
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– |
300 |
ns |
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Load |
Rise Time |
tr |
VGE1 = VGE2 = 15V, |
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– |
– |
700 |
ns |
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Switch |
Turn-off Delay Time |
td(off) |
RG = 2.1Ω, Resistive |
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– |
– |
450 |
ns |
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Times |
Fall Time |
tf |
Load Switching Operation |
– |
– |
350 |
ns |
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Diode Reverse Recovery Time |
trr |
IE = 600A, diE/dt = -1200A/μs |
– |
– |
300 |
ns |
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Diode Reverse Recovery Charge |
Qrr |
IE = 600A, diE/dt = -1200A/μs |
– |
3.3 |
– |
μC |
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Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified |
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Characteristics |
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Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
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Thermal Resistance, Junction to Case |
Rth(j-c)Q |
Per IGBT Module |
– |
– |
0.04 |
°C/W |
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Thermal Resistance, Junction to Case |
Rth(j-c)D |
Per FWDi Module |
– |
– |
0.06 |
°C/W |
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Contact Thermal Resistance |
Rth(c-f) |
Per Module, Thermal Grease Applied |
– |
0.015 |
– |
°C/W |
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Sep.1998
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