APPLICATION NOTE Silicon RF Power Semiconductors
Document NO. AN-VHF-048
Date |
: 27th May 2011 |
Prepared |
: Y.Koashi |
|
K.Mori |
Confirmed |
: T.Okawa |
(Taking charge of Silicon RF by MIYOSHI Electronics)
SUBJECT: RD35HUF2 single-stage amplifier with f=135-175MHz evaluation board
Features:
-The evaluation board for RD35HUF2
-Frequency: 135-175MHz
-Typical input power: 3W
-Typical output power: 40W
-Quiescent current: 500mA
-Operating current: approx. 5A
-Surface-mounted RF power amplifier structure
Gate Bias |
|
Drain Bias |
RF IN |
|
RF OUT |
|
|
|
PCB L=75mm W=46mm
Application Note for Silicon RF Power Semiconductors
1/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
Contents
|
|
|
Page |
1. |
Equivalent Circuitry ------------------------------------------------------------ |
3 |
|
2. |
PCB Layout ----------------------------------------------------------------------- |
4 |
|
3. |
Standard Land Pattern Dimensions -------------------------------------- |
6 |
|
4. |
Component List and Standard Deliverable --------------------------------------- |
7 |
|
5. |
Thermal Design of Heat Sink ------------------------------------------------ |
8 |
|
6. |
Typical RF Characteristics ---------------------------------------------------- |
9 |
|
|
6-1. |
Frequency vs. ------------------------------------------------------------ |
9 |
|
6-2. |
RF Power vs. ------------------------------------------------------------- |
10 |
|
6-3. |
Drain Quiescent Current vs. ---------------------------------------- |
14 |
|
6-4. |
DC Power Supply vs. ------------------------------------------------- |
15 |
Application Note for Silicon RF Power Semiconductors
2/16
3/16 |
Semiconductors Power RF Silicon for Note Application |
Gate Bias 
|
|
|
C9 |
C8 |
|
|
|
|
|
|
|
|
|
|
|
|
|
R1 |
|
|
|
RF IN |
W=2.0 |
|
W=2.0 |
|
W=2.0 |
L2 |
|
W=2.2 |
W=4.0 |
|
L=4.0 |
L1 |
L=10.0 |
|
L=18.0 |
VIA |
L=3.0 |
L=3.0 |
|||
C1 |
|
|
||||||||
ML2 |
ML2 |
|
ML2 |
|
ML2 |
|
|
ML1 |
ML1 |
|
W=2.0 |
|
|
|
|
|
|
L3 |
VIA |
|
|
L=11.0 |
|
|
|
|
|
|
|
|
|
|
C2 |
C3 C4 |
|
|
C5 |
C6 |
C7 |
|
|
|
|
|
RD35HUF2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain Bias |
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
Source |
Source |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Electrode3 |
Electrode1 |
|
|
|
|
|
|
|
L6 |
|
C30 |
C31 |
C32 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
RFOUT |
|
|
|
|
|
|
|
|
|
|
W=1.2 |
|
|
|
|
|
|
|
||
C10 |
|
W=4.6 |
W=3.6 |
W=1.8 |
W=1.2 |
|
|
|
|
W=2.0 |
|
W=2.0 |
|
W=2.0 |
||||
|
W=4.0 |
VIA |
|
L=20.0 |
|
L4 |
L=5.0 |
L5 |
L=9.0 |
C29 |
L=16.0 |
|||||||
R2 |
L=5.3 |
L=2.9 |
L=15.0 |
L=15.0 |
|
|
||||||||||||
L=5.0 |
ML1 |
ML1 |
ML1 |
|
ML1 |
VIA |
|
ML2 |
|
|
ML2 |
|
ML2 |
|
ML2 |
|||
|
|
|
|
|
|
|
||||||||||||
R3 |
ML1 |
|
|
|
|
|
VIA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
C11 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
C12 |
C14 |
C16 |
C18 |
C19 |
C21 |
C23 |
C25 |
|
C26 |
C27 |
|
C28 |
|
|
Source |
|
|
C13 |
|
C15 |
C17 |
C20 |
C22 |
C24 |
|
|
|
|
|
|
|
||
Source |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Electrode4 |
Electrode2 |
Board material: Glass Epoxy Substrate-- er=4.8, TanD=0.018 @1GHz
Micro Strip Line Substrate Thickness: ML1, T=0.2
ML2, T=1.1
VIA Hole Dimensions, Diameter=0.8 Length=1.6
UNIT: W/L/T, mm
.1 |
|
Circuitry Equivalent |
RD35HUF2 |
|
stage-single |
|
amplifier |
|
with |
|
175MHz-to-f=135 |
-048-VHF-AN - |
board evaluation |
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
2.PCB Layout
BOARD OUTLINE: 75.0*46.0(mm)
TOP VIEW (Layer 1)
470p
22p
22p
12p 4004C
0ohm
1000p
1000p
2..2K
68p |
10n |
10n |
68p |
||
68p |
|
|
47p |
|
47p |
|
|
|
22p
22p
22p
22p
22p
1000p
1000p
8005C
8002C |
18p |
15p |
470p
24p
8003C
BOTTOM VIEW (Layer 4), Perspective through Top View
100p 16ohm
16ohm |
|
100p |
15p |
|
|
15p |
|
|
15p |
47p |
|
15p |
47p |
15p |
Application Note for Silicon RF Power Semiconductors
4/16
RD35HUF2 single-stage amplifier with f=135-to-175MHz evaluation board
- AN-VHF-048-
BOARD OUTLINE: 75.0*46.0(mm)
Internal Layer (Layer 2) , Perspective Through Top View
Internal Layer (Layer 3) , Perspective Through Top View
Substrate Condition
Nomial Total Completed Thickness (included resist coating): 1.6mm
Layer1 ( Copper T: 43um with Gold Plating)
200um |
|
Prepreg |
|
Layer2 (Copper T:35um) |
||||
|
|
|
|
|
|
|
|
|
930um Core
Layer3 (Copper T:35um)
200um Prepreg
Layer4 ( Copper T: 43um with Gold Plating)
Er: 4.7 @ 1GHz
TanD: 0.018 @ 1GHz
Material: MCL-E-679G(R), Hitachi Chemical Co.
Application Note for Silicon RF Power Semiconductors
5/16
Loading...