MITSUBISHI HVIGBT MODULES
CM800DZB-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800DZB-34N
● IC ................................................................... |
800A |
● VCES ....................................................... |
1700V |
● Insulated Type
● 2-element in a Pack
● AISiC Baseplate
● Trench Gate IGBT : CSTBTTM
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM |
|
|
|
|
|
|
|
|
Dimensions in mm |
|||
|
|
130 |
|
|
|
|
|
|
|
|
|
|
|
|
114 |
|
|
|
|
|
|
|
|
|
|
|
|
57±0.25 |
57±0.25 |
|
4 - M8 NUTS |
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
4(E1) |
2(C2) |
|
|
|
|
|
|
20 |
|
|
|
E1 |
|
|
C2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
E1 |
C2 |
|
|
|
|
|
G1 |
|
|
G2 |
|
|
|
|
|
124±0.25 140 |
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
||
|
C1 |
E2 |
|
30 |
|
|
C1 |
|
|
E2 |
||
CM |
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
3(C1) |
1(E2) |
|
E1 |
|
|
|
|
E2 |
|
|
|
|
CIRCUIT DIAGRAM |
|
|
|
G1 |
C1 |
C2 |
G2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
16 |
18 |
|
6 - φ 7 MOUNTING HOLES |
|
|
|
||||
|
|
40 |
44 |
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
||
6 - M4 NUTS |
|
53 |
57 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
55.2 |
|
screwing depth |
35 |
5 |
|
||||
|
|
11.85 |
|
|
min. 16.5 |
|
11.5 |
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
||
screwing depth |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
min. 7.7 |
|
|
|
|
|
|
|
|
14 |
|
|
|
|
|
|
|
|
|
+2 |
0 |
+2 |
0 |
|
LABEL |
31.5 |
|
|
|
|
|
5 |
38 |
28 |
|
||||
|
|
|
|
|
|
|
||||||
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009
MITSUBISHI HVIGBT MODULES
CM800DZB-34N
|
|
|
|
|
HIGH POWER SWITCHING USE |
|||||
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
|
INSULATED TYPE |
||||||||
|
|
|
|
|
|
|
|
|
|
|
MAXIMUM RATINGS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Symbol |
Item |
|
|
Conditions |
|
|
Ratings |
|
Unit |
|
VCES |
Collector-emitter voltage |
VGE = 0V, Tj = 25°C |
|
|
|
1700 |
|
|
V |
|
VGES |
Gate-emitter voltage |
|
VCE = 0V, Tj = 25°C |
|
|
|
± 20 |
|
|
V |
IC |
Collector current |
|
DC, Tc = 80°C |
|
|
|
800 |
|
|
A |
ICM |
|
Pulse |
|
(Note 1) |
|
1600 |
|
|
A |
|
|
|
|
|
|
|
|||||
IE |
Emitter current |
(Note 2) |
DC |
|
|
|
800 |
|
|
A |
IEM |
Pulse |
|
(Note 1) |
|
1600 |
|
|
A |
||
|
|
|
|
|
|
|||||
Pc |
Maximum power dissipation (Note 3) |
Tc = 25°C, IGBT part |
|
|
|
5200 |
|
|
W |
|
Viso |
Isolation voltage |
|
RMS, sinusoidal, f = 60Hz, t = 1 min. |
|
|
4000 |
|
|
V |
|
Tj |
Junction temperature |
|
|
|
|
|
–40 ~ +150 |
|
°C |
|
Top |
Operating temperature |
|
|
|
|
–40 ~ +125 |
|
°C |
||
Tstg |
Storage temperature |
|
|
|
|
|
–40 ~ +125 |
|
°C |
|
tpsc |
Maximum short circuit pulse width |
VCC = 1000V, VCE ≤ VCES, VGE = 15V, Tj = 125°C |
|
10 |
|
|
µs |
|||
ELECTRICAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
Symbol |
Item |
|
|
Conditions |
|
|
Limits |
|
Unit |
|
|
|
|
Min |
Typ |
|
Max |
||||
|
|
|
|
|
|
|
|
|||
ICES |
Collector cutoff current |
VCE = VCES, VGE = 0V |
|
Tj = 25°C |
— |
— |
|
3 |
mA |
|
|
Tj = 125°C |
— |
2.5 |
|
6 |
|||||
|
|
|
|
|
|
|
||||
VGE(th) |
Gate-emitter threshold voltage |
VCE = 10 V, IC = 80 mA, Tj = 25°C |
|
5.5 |
6.5 |
|
7.5 |
V |
||
IGES |
Gate leakage current |
|
VGE = VGES, VCE = 0V, Tj = 25°C |
|
— |
— |
|
0.5 |
µA |
|
Cies |
Input capacitance |
|
|
|
|
— |
132 |
|
— |
nF |
Coes |
Output capacitance |
|
VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C |
— |
7.2 |
|
— |
nF |
||
Cres |
Reverse transfer capacitance |
|
|
|
— |
2.1 |
|
— |
nF |
|
Qg |
Total gate charge |
|
VCC = 900 V, IC = 800 A, VGE = ±15 V, Tj = 25°C |
— |
9.1 |
|
— |
µC |
||
VCE(sat) |
Collector-emitter saturation |
IC = 800 A |
(Note 4) |
Tj = 25°C |
— |
2.10 |
|
2.70 |
V |
|
voltage |
|
VGE = 15 V |
|
Tj = 125°C |
— |
2.35 |
|
— |
||
|
|
|
|
|
||||||
td(on) |
Turn-on delay time |
|
VCC = 900 V, IC = 800 A, VGE = ±15 V |
|
— |
— |
|
1.50 |
µs |
|
tr |
Turn-on rise time |
|
|
— |
— |
|
0.60 |
µs |
||
|
RG(on) = 1.6 Ω, Tj = 125°C, Ls = 150 nH |
|
|
|||||||
|
Turn-on switching energy |
|
|
|
|
— |
|
|||
Eon(10%) |
Inductive load |
|
|
— |
0.30 |
|
J/P |
|||
|
(Note 5) |
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
td(off) |
Turn-off delay time |
|
VCC = 900 V, IC = 800 A, VGE = ±15 V |
|
— |
— |
|
3.00 |
µs |
|
tf |
Turn-off fall time |
|
|
— |
— |
|
0.60 |
µs |
||
|
RG(off) = 3.9 Ω, Tj = 125°C, Ls = 150 nH |
|
|
|||||||
|
Turn-off switching energy |
|
|
|
|
— |
|
|||
Eoff(10%) |
Inductive load |
|
|
— |
0.20 |
|
J/P |
|||
|
(Note 5) |
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
VEC |
Emitter-collector voltage |
IE = 800 A |
(Note 4) |
Tj = 25°C |
— |
2.20 |
|
3.00 |
V |
|
|
(Note 2) |
VGE = 0 V |
|
Tj = 125°C |
— |
1.85 |
|
— |
||
|
|
|
|
|
||||||
trr |
Reverse recovery time |
|
|
|
— |
— |
|
1.50 |
µs |
|
|
(Note 2) |
|
|
|
|
|||||
|
|
VCC = 900 V, IE = 800 A, VGE = ±15 V |
|
|
|
|
|
|
||
|
Reverse recovery charge |
|
|
|
|
|
|
|||
Qrr |
RG(on) = 1.6 Ω, Tj = 125°C, Ls = 150 nH |
|
— |
260 |
|
— |
µC |
|||
|
(Note 2) |
|
|
|||||||
|
|
Inductive load |
|
|
|
|
|
|
|
|
Erec(10%) |
Reverse recovery energy |
|
|
— |
0.18 |
|
— |
J/P |
||
|
|
|
|
|||||||
(Note 2), (Note 5) |
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
||
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009
2
|
MITSUBISHI HVIGBT MODULES |
|
CM800DZB-34N |
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
HIGH POWER SWITCHING USE |
INSULATED TYPE |
|
|
|
THERMAL CHARACTERISTICS
Symbol |
Item |
Conditions |
|
Limits |
|
Unit |
|
Min |
Typ |
Max |
|||||
|
|
|
|
||||
Rth(j-c)Q |
Thermal resistance: IGBT part |
Junction to Case, 1/2 module |
— |
— |
24.0 |
K/kW |
|
Rth(j-c)R |
Thermal resistance: FWDi part |
Junction to Case, 1/2 module |
— |
— |
36.0 |
K/kW |
|
Rth(c-f) |
Contact thermal resistance |
Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm, |
— |
18.0 |
— |
K/kW |
|
1/2 module |
|||||||
|
|
|
|
|
|
MECHANICAL CHARACTERISTICS
Symbol |
Item |
Conditions |
|
Limits |
|
Unit |
|
Min |
Typ |
Max |
|||||
|
|
|
|
||||
Mt |
|
M8: Main terminals screw |
7.0 |
— |
13.0 |
N·m |
|
Ms |
Mounting torque |
M6: Mounting screw |
3.0 |
— |
6.0 |
N·m |
|
Mt |
|
M4: Auxiliary terminals screw |
1.0 |
— |
2.0 |
N·m |
|
m |
Mass |
|
— |
1.0 |
— |
kg |
|
CTI |
Comparative tracking index |
|
600 |
— |
— |
— |
|
da |
Clearance |
|
19.5 |
— |
— |
mm |
|
ds |
Creepage distance |
|
32.0 |
— |
— |
mm |
|
LP CE |
Parasitic stray inductance |
|
— |
18 |
— |
nH |
|
RCC’+EE’ |
Internal lead resistance |
Tc = 25°C |
— |
0.30 |
— |
mΩ |
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2.The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3.Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4.Pulse width and repetition rate should be such as to cause negligible temperature rise.
5.Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009
3
Loading...