MITSUBISHI IGBT MODULES
CM300DY-24H
HIGH POWER SWITCHING USE INSULATED TYPE
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A |
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B |
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P - DIA. |
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M |
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(4 TYP.) |
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C2E1 |
E2 |
C1 |
C2 |
R |
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E2 |
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C |
F |
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L |
D |
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E1 |
R |
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C1 |
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G |
G |
H |
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S - M6 THD. |
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(3 TYP) |
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TAB#110 t=0.5 |
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N |
K |
N |
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Q |
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K |
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K |
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E |
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J |
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N |
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C2 |
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E2 |
C2E1 |
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E2 |
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C1 |
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E1 |
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C1 |
Outline Drawing and Circuit Diagram
Dimensions |
Inches |
Millimeters |
A |
4.33 |
110.0 |
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B |
3.661±0.01 |
93.0±0.25 |
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C |
3.15 |
80.0 |
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D |
2.441±0.01 |
62.0±0.25 |
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E |
1.18 Max. |
30.0 Max. |
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F |
1.18 |
30.0 |
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G |
0.98 |
25.0 |
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H |
0.85 |
21.5 |
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J |
0.83 |
21.2 |
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Dimensions |
Inches |
Millimeters |
K |
0.71 |
18.0 |
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L |
0.59 |
15.0 |
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M |
0.55 |
14.0 |
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N |
0.28 |
7.0 |
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P |
0.26 Dia. |
Dia. 6.5 |
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Q |
0.33 |
8.5 |
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R |
0.24 |
6.0 |
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S |
M6 Metric |
M6 |
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Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy Heat Sinking
Applications:
uAC Motor Control
uMotion/Servo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM300DY-
24H is a 1200V (VCES), 300 Ampere Dual IGBT Module.
Type |
Current Rating |
VCES |
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Amperes |
Volts (x 50) |
CM |
300 |
24 |
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Sep.1998
MITSUBISHI IGBT MODULES
CM300DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings |
Symbol |
CM300DY-24H |
Units |
Junction Temperature |
Tj |
–40 to 150 |
°C |
Storage Temperature |
Tstg |
–40 to 125 |
°C |
Collector-Emitter Voltage (G-E SHORT) |
VCES |
1200 |
Volts |
Gate-Emitter Voltage (C-E SHORT) |
VGES |
±20 |
Volts |
Collector Current (TC = 25°C) |
IC |
300 |
Amperes |
Peak Collector Current |
ICM |
600* |
Amperes |
Emitter Current** (TC = 25°C) |
IE |
300 |
Amperes |
Peak Emitter Current** |
IEM |
600* |
Amperes |
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) |
Pc |
2100 |
Watts |
Mounting Torque, M6 Main Terminal |
– |
1.96 ~ 2.94 |
N · m |
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Mounting Torque, M6 Mounting |
– |
1.96 ~ 2.94 |
N · m |
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Weight |
– |
500 |
Grams |
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Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) |
Viso |
2500 |
Vrms |
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics |
Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
Collector-Cutoff Current |
ICES |
VCE = VCES, VGE = 0V |
– |
– |
1.0 |
mA |
Gate Leakage Current |
IGES |
VGE = VGES, VCE = 0V |
– |
– |
0.5 |
μA |
Gate-Emitter Threshold Voltage |
VGE(th) |
IC = 30mA, VCE = 10V |
4.5 |
6.0 |
7.5 |
Volts |
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 300A, VGE = 15V |
– |
2.5 |
3.4** |
Volts |
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IC = 300A, VGE = 15V, Tj = 150°C |
– |
2.25 |
– |
Volts |
Total Gate Charge |
QG |
VCC = 600V, IC = 300A, VGE = 15V |
– |
1500 |
– |
nC |
Emitter-Collector Voltage |
VEC |
IE = 300A, VGE = 0V |
– |
– |
3.5 |
Volts |
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics |
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Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
Input Capacitance |
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Cies |
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– |
– |
60 |
nF |
Output Capacitance |
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Coes |
VGE = 0V, VCE = 10V |
– |
– |
21 |
nF |
Reverse Transfer Capacitance |
Cres |
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– |
– |
12 |
nF |
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Resistive |
Turn-on Delay Time |
td(on) |
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– |
– |
250 |
ns |
Load |
Rise Time |
tr |
VCC = 600V, IC = 300A, |
– |
– |
500 |
ns |
Switching |
Turn-off Delay Time |
td(off) |
VGE1 = VGE2 = 15V, RG = 1.0Ω |
– |
– |
350 |
ns |
Times |
Fall Time |
tf |
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– |
– |
350 |
ns |
Diode Reverse Recovery Time |
trr |
IE = 300A, diE/dt = –600A/μs |
– |
– |
250 |
ns |
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Diode Reverse Recovery Charge |
Qrr |
IE = 300A, diE/dt = –600A/μs |
– |
2.23 |
– |
μC |
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Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics |
Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
Thermal Resistance, Junction to Case |
Rth(j-c) |
Per IGBT |
– |
– |
0.06 |
°C/W |
Thermal Resistance, Junction to Case |
Rth(j-c) |
Per FWDi |
– |
– |
0.12 |
°C/W |
Contact Thermal Resistance |
Rth(c-f) |
Per Module, Thermal Grease Applied |
– |
– |
0.035 |
°C/W |
Sep.1998
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