Fairchild MCT6, MCT61, MCT62 service manual

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Fairchild MCT6, MCT61, MCT62 service manual

February 2010

MCT6, MCT61, MCT62

Dual Phototransistor Optocouplers

Features

Two isolated channels per package

Two packages fit into a 16 lead DIP socket

Choice of three current transfer ratios

Underwriters Laboratory (U.L.) recognized File E90700

VDE approved for IEC60747-5-2

Description

The MCT6X Optocouplers have two channels for density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.

Applications

AC line/digital logic – isolate high voltage transients

Digital logic/digital logic – eliminate spurious grounds

Digital logic/AC triac control – isolate high voltage transients

Twisted pair line receiver – eliminate ground loop feedthrough

Telephone/telegraph line receiver – isolate high voltage transients

High frequency power supply feedback control – maintain floating grounds and transients

Relay contact monitor – isolate floating grounds and transients

Power supply monitor – isolate transients

Schematic

 

Package Outlines

ANODE

1

8

EMITTER

 

 

 

8

 

 

 

1

CATHODE

2

7

COLLECTOR

CATHODE

3

6

COLLECTOR

 

 

 

8

 

 

 

8

 

 

 

1

ANODE

4

5

1

EMITTER

Equivalent Circuit

Optocouplers Phototransistor Dual — MCT62 MCT61, MCT6,

©2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MCT6, MCT61, MCT62 Rev. 1.0.5

 

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol

Rating

Value

Unit

 

 

 

 

TOTAL DEVICE

 

 

 

 

 

 

 

TSTG

Storage Temperature

-55 to +150

°C

TOPR

Operating Temperature

-55 to +100

°C

TSOL

Lead Solder Temperature

260 for 10 sec

°C

(Refer to Reflow Temperature Profile)

PD

Total Device Power Dissipation @ TA = 25°C

400

mW

Derate above 25°C

5.33

mW/°C

 

 

 

 

 

EMITTER (Each channel)

 

 

 

 

 

 

IF

Forward Current – Continuous

60

mA

IF(pk)

Forward Current – Peak (PW = 1µs, 300pps)

3

A

VR

Reverse Voltage

3.0

V

PD

LED Power Dissipation @ TA = 25°C

100

mW

Derate above 25°C (Total Input)

1.3

mW/°C

 

 

 

 

 

DETECTOR (Each channel)

 

 

 

 

 

 

IC

Collector Current – Continuous

30

mA

PD

Detector Power Dissipation @ TA = 25°C

150

mW

Derate above 25°C

2.0

mW/°C

 

 

 

 

 

Optocouplers Phototransistor Dual — MCT62 MCT61, MCT6,

©2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MCT6, MCT61, MCT62 Rev. 1.0.5

2

Electrical Characteristics (TA = 25°C unless otherwise specified)

Individual Component Characteristics

Symbol

Parameter

 

 

 

 

Test Conditions

 

 

Min.

 

Typ.*

 

Max.

 

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

EMITTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VF

Input Forward Voltage

 

 

 

 

IF = 20mA

 

 

 

 

 

1.2

 

1.5

 

V

VR

Reverse Voltage

 

 

 

 

IR = 10µA

 

 

3.0

 

25

 

 

 

 

V

IR

Reverse Current

 

 

 

 

VR = 5V

 

 

 

 

 

0.001

 

10

 

 

µA

CJ

Junction Capacitance

 

 

 

 

VF = 0V, f = 1MHz

 

 

 

 

 

50

 

 

 

 

pF

DETECTOR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BVCEO

Collector-Emitter Breakdown Voltage

 

 

IC = 1.0mA, IF = 0

 

 

30

 

85

 

 

 

 

V

BVECO

Emitter-Collector Breakdown Voltage

 

 

IE = 100µA, IF = 0

 

 

6

 

13

 

 

 

 

V

ICEO

Collector-Emitter Dark Current

 

 

 

 

VCE = 10V, IF = 0

 

 

 

 

 

5

 

 

100

 

nA

CCE

Capacitance

 

 

 

 

VCE = 0V, f = 1MHz

 

 

 

 

 

8

 

 

 

 

 

pF

Transfer Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Characteristic

 

 

 

 

Test Conditions

 

 

Min.

 

Typ.*

 

Max.

 

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SWITCHING CHARACTERISTICS (AC)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ton

Non-Saturated Turn-on Time

 

RL = 100Ω, IC = 2mA, VCC = 10V

 

 

 

 

2.4

 

 

 

 

µs

toff

Non-Saturated Turn-off Time

 

 

 

 

 

 

 

 

 

 

 

 

2.4

 

 

 

 

µs

CURRENT TRANSFER RATIO, COLLECTOR-EMITTER (DC)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CTR

MCT6

 

IF = 10mA, VCE = 10V

 

 

20

 

 

 

 

 

 

 

%

 

 

MCT61

 

IF = 5mA, VCE = 5V

 

 

50

 

 

 

 

 

 

 

 

 

 

MCT62

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE(sat)

Saturation Voltage

 

IF = 16mA, IC = 2mA

 

 

 

 

 

0.15

 

0.40

 

V

Isolation Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Characteristic

 

 

Test Conditions

 

Min.

 

Typ.*

 

Max.

 

 

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VISO

Input-Output Isolation Voltage

 

II-O ≤ 10µA, t = 1min.

 

5000

 

 

 

 

 

 

 

 

Vac(rms)

R

ISO

Isolation Resistance

 

V

 

= 500VDC

 

1011

 

 

 

 

 

 

 

 

 

 

 

 

 

I-O

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CISO

Isolation Capacitance

 

f = 1MHz

 

 

 

 

 

0.5

 

 

 

 

 

pF

*All typicals at TA = 25°C

Optocouplers Phototransistor Dual — MCT62 MCT61, MCT6,

©2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MCT6, MCT61, MCT62 Rev. 1.0.5

3

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