Fairchild HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 service manual

		HUF75639S3		HUF75639G3, HUF75639P3, HUF75639S3S,
					HUF75639S3
				Data Sheet	December 2001

56A, 100V, 0.025 Ohm, N-Channel

UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology

achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75639.

Ordering Information

PART NUMBER	PACKAGE	BRAND
HUF75639G3	TO-247	75639G
HUF75639P3	TO-220AB	75639P
HUF75639S3S	TO-263AB	75639S
HUF75639S3	TO-262AA	75639S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.

Features

•56A, 100V

•Simulation Models

-Temperature Compensated PSPICE® and SABER™ Electrical Models

-Spice and Saber Thermal Impedance Models

-www.fairchildsemi.com

•Peak Current vs Pulse Width Curve

•UIS Rating Curve

•Related Literature

-TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

D

G

S

Packaging

	JEDEC STYLE TO-247	JEDEC TO-220AB
	SOURCE	SOURCE
	DRAIN	DRAIN
		GATE
	GATE
		DRAIN
		(FLANGE)

DRAIN (TAB)

JEDEC TO-263AB					TO-262AA
					SOURCE
					DRAIN
					GATE
GATE			DRAIN
			(FLANGE)
SOURCE			DRAIN
			(TAB)

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corporation

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3

Absolute Maximum Ratings T = 25oC, Unless Otherwise Specified
C
			UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDSS	100	V
Drain to Gate Voltage (RGS = 20kΩ ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDGR	100	V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VGS	±20	V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . ID	56	A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . IDM	Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . EAS	Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . PD	200	W
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . .	1.35	W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	TJ, TSTG	-55 to 175	oC
Maximum Temperature for Soldering			oC
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . TL	300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . Tpkg	260	oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

100

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 95V, VGS = 0V

-

-

1

µA

V

DS

= 90V, V

GS

= 0V, T = 150oC

-

-

250

µA

C

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

-

±100

nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

2

-

4

V

Drain to Source On Resistance

rDS(ON)

ID = 56A, VGS = 10V (Figure 9)

-

0.021

0.025

Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

Rθ JC

(Figure 3)

-

-

0.74

oC/W

Thermal Resistance Junction to Ambient

Rθ JA

TO-247

-

-

30

oC/W

TO-220, TO-263

-

-

62

oC/W

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

VDD = 50V, ID 56A,

-

-

110

ns

RL = 0.89Ω , VGS = 10V,

Turn-On Delay Time

td(ON)

-

15

-

ns

RGS = 5.1Ω

Rise Time

tr

-

60

-

ns

Turn-Off Delay Time

td(OFF)

-

20

-

ns

Fall Time

tf

-

25

-

ns

Turn-Off Time

tOFF

-

-

70

ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 50V,

-

110

130

nC

ID 56A,

Gate Charge at 10V

Qg(10)

VGS = 0V to 10V

-

57

75

nC

RL = 0.89Ω

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

Ig(REF) = 1.0mA

-

3.7

4.5

nC

(Figure 13)

Gate to Source Gate Charge

Qgs

-

9.8

-

nC

Gate to Drain “Miller” Charge

Q

-

24

-

nC

gd

©2001 Fairchild Semiconductor Corporation

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3

Electrical Specifications TC = 25oC, Unless Otherwise Specified

	PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS
	CAPACITANCE SPECIFICATIONS
	Input Capacitance	CISS	VDS = 25V, VGS = 0V,	-	2000	-	pF
			f = 1MHz
	Output Capacitance	COSS		-	500	-	pF
			(Figure 12)
	Reverse Transfer Capacitance	CRSS		-	65	-	pF

Source to Drain Diode Specifications

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS
Source to Drain Diode Voltage	VSD	ISD = 56A	-	-	1.25	V
Reverse Recovery Time	trr	ISD = 56A, dISD/dt = 100A/ s	-	-	110	ns
Reverse Recovered Charge	QRR	ISD = 56A, dISD/dt = 100A/ s	-	-	320	nC

Typical Performance Curves

	1.2
MULTIPLIER	1.0
	0.8
DISSIPATION	0.6
	0.4
POWER	0.2
	0							175
	0	25	50	75	100	125	150
			TC, CASE TEMPERATURE (oC)

	60
(A)	50
CURRENT	40
	30
, DRAIN	20
D
I	10
	0
	25	50	75	100	125	150	175
			TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

			TEMPERATURE			CASE TEMPERATURE
		2
			DUTY CYCLE - DESCENDING ORDER
		1	0.5
			0.2
	IMPEDANCE		0.1
NORMALIZED			0.05
			0.02
			0.01
		0.1					PDM
,	THERMAL
Zθ JC							t1
							t2
							NOTES:
				SINGLE PULSE			DUTY FACTOR: D = t1/t2
							PEAK TJ = PDM x Zθ JC x Rθ JC + TC
		0.01	10-4	10-3	10-2	10-1	100	101
		10-5

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2001 Fairchild Semiconductor Corporation

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B