Fairchild MCT2, MCT2E, MCT210, MCT271, MCT2200 service manual

PHOTOTRANSISTOR OPTOCOUPLERS

MCT2	MCT2E	MCT210	MCT271
MCT2200	MCT2201	MCT2202

WHITE PACKAGE (-M SUFFIX)

6

6 1

1

6

1

BLACK PACKAGE (NO -M SUFFIX)

6

6 1

1

6

1

DESCRIPTION

The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

FEATURES

•UL recognized (File # E90700)

•VDE recognized (File # 94766)

–Add option V for white package (e.g., MCT2V-M)

–Add option 300 for black package (e.g., MCT2.300)

•MCT2 and MCT2E are also available in white package by specifying -M suffix, eg. MCT2-M

APPLICATIONS

•Power supply regulators

•Digital logic inputs

•Microprocessor inputs

SCHEMATIC

1		6
2		5
3	NC	4

PIN 1. ANODE 2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. BASE

© 2005 Fairchild Semiconductor Corporation

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PHOTOTRANSISTOR OPTOCOUPLERS

MCT2	MCT2E			MCT210	MCT271
MCT2200	MCT2201		MCT2202
ABSOLUTE MAXIMUM RATINGS
Parameter		Symbol		Device	Value	Units
TOTAL DEVICE		TSTG		ALL	-55 to +150	°C
Storage Temperature
Operating Temperature		TOPR		ALL	-55 to +100	°C
Lead Solder Temperature		TSOL		ALL	260 for 10 sec	°C
Total Device Power Dissipation @ TA = 25°C				-M	250	mW
		PD		Non-M	260
Derate above 25°C				-M	2.94	mW/°C
				Non-M	3.3
EMITTER		IF		-M	60	mA
DC/Average Forward Input Current				Non-M	100
Reverse Input Voltage		VR		ALL	3	V
Forward Current - Peak (300µs, 2% Duty Cycle)		IF(pk)		ALL	3	A
LED Power Dissipation @ TA = 25°C		PD		-M	120	mW
				Non-M	150
Derate above 25°C				-M	1.41	mW/°C
				Non-M	2.0
DETECTOR		IC		ALL	50	mA
Collector Current
Collector-Emitter Voltage		VCEO		ALL	30	V
Detector Power Dissipation @ TA = 25°C				ALL	150	mW
Derate above 25°C		PD		-M	1.76	mW/°C
				Non-M	2.0

© 2005 Fairchild Semiconductor Corporation

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6/15/05

PHOTOTRANSISTOR OPTOCOUPLERS

MCT2	MCT2E	MCT210	MCT271
MCT2200	MCT2201	MCT2202

ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

Individual Component Characteristics
Parameter	Test Conditions	Symbol	Device	Min	Typ**	Max	Unit
EMITTER
			MCT2/-M
			MCT2E/-M
	(IF = 20 mA)	V	MCT271		1.25	1.50	V
Input Forward Voltage			MCT2200
		F
			MCT2201
			MCT2202
	(TA = 0-70°C, IF = 40 mA)		MCT210		1.33
			MCT2/-M
			MCT2E/-M
	(VR = 3.0 V)	IR	MCT271		0.001	10	µA
Reverse Leakage Current			MCT2200
			MCT2201
			MCT2202
	(TA = 0-70°C, VR = 6.0 V)		MCT210
DETECTOR	(IC = 1.0 mA, IF = 0)	BVCEO	ALL	30	100		V
Collector-EmitterBreakdownVoltage	(TA = 0-70°C)		MCT210
			MCT2/-M
			MCT2E/-M
	(IC = 10 µA, IF = 0)	BVCBO	MCT271	70	120		V
Collector-Base Breakdown Voltage			MCT2200
			MCT2201
			MCT2202
	(TA = 0-70°C)		MCT210	30
			MCT2/-M
			MCT2E/-M
	(IE = 100 µA, IF = 0)	BVECO	MCT271	7	10		V
Emitter-Collector Breakdown Voltage			MCT2200
			MCT2201
			MCT2202
	(TA = 0-70°C)		MCT210	6	10
Collector-Emitter Dark Current	(VCE = 10 V, IF = 0)	ICEO	ALL		1	50	nA
	(VCE = 5 V, TA = 0-70°C)					30	µA
Collector-Base Dark Current	(VCB = 10 V, IF = 0)	ICBO	ALL			20	nA
Capacitance	(VCE = 0 V, f = 1 MHz)	CCE	ALL		8		pF

** Typical values at TA = 25°C

© 2005 Fairchild Semiconductor Corporation

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PHOTOTRANSISTOR OPTOCOUPLERS

	MCT2		MCT2E		MCT210			MCT271
	MCT2200		MCT2201		MCT2202
	TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
	DC Characteristic		Test Conditions		Symbol	Device	Min	Typ**	Max	Unit
			(TA = 0-70°C)			MCT210	150
						MCT2200	20
			(IF = 10 mA, VCE = 5 V)			MCT2201	100
						MCT2202	63		125
	Output Collector				CTR	MCT2				%
						MCT2-M	20
	Current
			(IF = 10 mA, VCE = 10 V)			MCT2E
						MCT2E-M
						MCT271	45		90
			(IF = 3.2 mA to 32 mA, VCE = 0.4 V)			MCT210	50
			(TA = 0-70°C)
						MCT2
						MCT2-M
			(IC = 2 mA, IF = 16 mA)			MCT2E
	Collector-Emitter					MCT2E-M
					VCE (SAT)	MCT271			0.4	V
	Saturation Voltage
			(IC = 16 mA, IF = 32 mA, TA = 0-70°C)			MCT210
						MCT2200
			(IC = 2.5 mA, IF = 10 mA)			MCT2201
						MCT2202
	AC Characteristic		(IF = 15 mA, VCC = 5 V, RL = 2 kΩ)			MCT2		1.1
	Saturated Turn-on		(RB = Open) (Fig. 20)			MCT2E		1.1
	Time from 5 V to				ton
			(IF = 20 mA, VCC	= 5 V, RL = 2 kΩ)		MCT2		1.3
	0.8 V
			(RB = 100 kΩ) (Fig. 20)			MCT2E		1.3
	Saturated Turn-off		(IF = 15 mA, VCC = 5 V, RL = 2 kΩ)			MCT2		50
			(RB = Open) (Fig. 20)			MCT2E		50
	Time from SAT to				toff
			(IF = 20 mA, VCC	= 5 V, RL = 2 kΩ)		MCT2		20
	2.0 V
			(RB = 100 kΩ) (Fig. 20)			MCT2E		20		µs
	Turn-on Time		(IF = 10 mA, VCC = 10 V, RL = 100 Ω)		ton	MCT2-M		2
						MCT2E-M
	Turn-off Time		(IF = 10 mA, VCC = 10 V, RL = 100 Ω)		toff	MCT2-M		2
						MCT2E-M
	Rise Time		(IF = 10 mA, VCC = 10 V, RL = 100 Ω)		tr	MCT2-M		2
						MCT2E-M
	Fall Time		(IF = 10 mA, VCC = 10 V, RL = 100 Ω)		tf	MCT2-M		1.5
						MCT2E-M
	** Typical values at TA = 25°C
© 2005 Fairchild Semiconductor Corporation				Page 4 of 15						6/15/05

PHOTOTRANSISTOR OPTOCOUPLERS

MCT2

MCT2E

MCT210

MCT271

MCT2200

MCT2201

MCT2202

TRANSFER CHARACTERISTICS (Cont.)

AC Characteristic

Test Conditions

Symbol

Device

Min

Typ**

Max

Unit

Saturated turn-on time

ton

1.0

Saturated turn-off time

(IF = 16 mA, RL = 1.9kΩ, VCC = 5 V)

(Approximates a typical

(Fig. 20)

toff

48

TTL interface)

MCT271

Saturated turn-on time

ton

1.0

Saturated turn-off time

(IF = 16 mA, RL = 4.7kΩ, VCC = 5 V)

(Approximates a typical

(Fig. 20)

toff

98

low power TTL interface)

Saturated rise time

(I = 16 mA, R = 560Ω, V

= 5 V)

tr

1.0

F

L

CC

Saturated fall time

(Fig. 20, 21)

tf

11

Saturated propagation

TPD (HL)

MCT210

1.0

delay - high to low

(IF = 16 mA, RL = 2.7kΩ) (Fig. 20, 21)

µs

Saturated propagation

TPD (LH)

50

delay - low to high

Non-saturated

TON

MCT2200

2

10

turn on time

(IC

= 2 mA, VCC = 10 V, RL = 100Ω

MCT2201

Non-saturated

(Fig. 20)

TOFF

MCT2202

2

10

turn off time

Non-saturated rise time

(I

= 2 mA, V

= 5 V, R

= 100Ω)

tr

2

C

CC

L

MCT210

tf

Non-saturated fall time

(Fig. 20)

2

Non-saturated

ton

2

7

turn-on time

(IC

= 2 mA, VCC = 5 V, RL = 100Ω)

MCT271

Non-saturated

(Fig. 20)

toff

2

7

turn-off time

** Typical values at TA = 25°C

ISOLATION CHARACTERISTICS

Characteristic

Test Conditions

Symbol

Min

Typ*

Max

Units

Input-Output Isolation Voltage

(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)

VISO

5300

Vac(rms)

(‘-M’, White Package) (f = 60 Hz, t = 1 sec)

7500

Vac(pk)

Isolation Resistance

(V

= 500 VDC)

R

1011

Ω

I-O

ISO

Isolation Capacitance

(VI-O = &, f = 1 MHz)

CISO

0.5

pF

(‘-M’ White Package)

0.2

2

pF

Note

* Typical values at TA = 25°C

© 2005 Fairchild Semiconductor Corporation

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