Fairchild MMBF5484, MMBF5485, MMBF5486, 2N5484, 2N5485 Schematic

2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486

2N5484 2N5485 2N5486

G

S

D

TO-92

MMBF5484 MMBF5485 MMBF5486

G

SOT-23

Mark: 6B / 6M / 6H

NOTE: Source & Drain

are interchangeable

S

D

N-Channel RF Amplifier

This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

DG

V

GS

I

GF

TJ ,T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Drain-Gate Voltage 25 V Gate-Source Voltage - 25 V Forward Gate Current 10 mA Operating and Stora ge Junction Temperature Range -55 to +150

°

C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5484-5486 *MMBF5484-5486

P

D

R

JC

θ

R

JA

θ

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case 125 Thermal Resistance, Junction to Ambient 357 556

350

2.8

225

1.8

mW

mW/°C

C/W

°

C/W

°

µ

N-Channel RF Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS

V

(BR)GSS

I

GSS

V

GS(off)

Gate-Source Breakdown Voltage Gate Reverse Current VGS = - 20 V, VDS = 0

Gate-Source Cutoff Voltage

ON CHARACTERISTICS

I

DSS

Zero-Gate Voltage Drain Current*

SMALL SIGNAL CHARACTERISTICS

g

fs

Re(y

is)

g

os

Re(y

os)

Re(y

fs)

C

iss

C

rss

C

oss

NF Noise Figure

Forward Transfer Conductance VDS = 15 V, V

Input Conductance VDS = 15 V, V

Output Conductance VDS = 15 V, V

Forward Transconductance VDS = 15 V, V

Input Capacitance VDS = 15 V, V Reverse Transfer Capacitance VDS = 15 V, V Output Capacitance VDS = 15 V, V

*Pulse T est: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%

= - 1.0 µA, VDS = 0

I

G

= - 20 V, VDS= 0, TA= 100°C

V

GS

= 15 V, ID = 10 nA

V

DS

V

= 15 V, VGS = 0

DS

= 0, f = 1.0 kHz

GS

= 0, f = 100 MHz

GS

= 15 V, V

V

DS

= 15 V, V

V

DS

= 15 V, V

V

DS

= 15 V, RG = 1.0 kΩ,

V

DS

= 0, f = 400 MHz

GS

= 0, f = 1.0 kHz

GS

= 0, f = 100 MHz

GS

= 0, f = 400 MHz

GS

= 0, f = 100 MHz

GS

= 0, f = 400 MHz

GS

= 0, f = 1.0 MHz 5.0 pF

GS

= 0, f = 1.0 MHz 1.0 pF

GS

= 0, f = 1.0 MHz 2.0 pF

GS

f = 100 MHz V

= 15 V, RG = 1.0 kΩ,

DS

f = 400 MHz V

= 15 V , RG = 1.0 kΩ,

DS

f = 100 MHz V

= 15 V, RG = 1.0 kΩ,

DS

f = 400 MHz

5484 5485 5486

5484

5485 / 5486

5484 5485 5486

5484

5485 / 5486

5484 5485

5486

5484

5485 / 5486

- 25 V

- 1.0

- 0.2

- 0.3

- 0.5

- 2.0

1.0

4.0

8.0

3000 3500 4000

- 3.0

- 4.0

- 6.0

5.0 10 20

6000 7000 8000

100

1000

50 60 75

75

100

2500 3000

3500

3.0

4.0

2.0

4.0

nA µA

mA mA mA

mhos mhos mhos

mhos mhos

mhos mhos mhos

mhos mhos

mhos

dB dB dB dB

2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486

V V V

5

T ypical Characteristics

2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486

N-Channel RF Amplifier

(continued)

20

V = -4.5V

16

12

8

4

D

I - DRAIN CURRENT (mA)

0

7 6 5 4 3 2 1 0

gfs -- TRANSCONDUCTANCE (mmhos)

Transfer Characteristics

GS(OFF)

O

T = -55 C

A

O

T = +25 C

A

O

T = +125 C

A

T = -55 C

A

T = +25 C

A

T = +125 C

A

-2.5 V

V - GATE-SOURCE VOLTAGE(V)

GS

Transconductance

Characteristics

O

T = -55 C

A

-2.5 V

V - GATE-SOURCE VOLTAGE(V)

GS

O

T = +25 C

A

T = +125 C

A

O

V = 15V

DS

O

V = 15V

DS

T = -55 C

A

T = +25 C

A

T = +125 C

A

V = -4.5V

GS(OFF)

Channe l Resistance vs Temperature

1000

Ω

500

V = -1.0V

300 200

GS(OFF)

-2.5 V

-5.0V

100

50 30

20

DS

r - DRAIN ON RESISTANCE ( )

-5-4-3-2-10

10

-50 0 50 100 150

-8.0 V

V = 100mV

DS

V = 0 V

GS

°°

°

T - AMBI ENT TEM PERATURE ( C)

A

°°

Common Drain-Source

Characteristics

5

4

O

-5-4-3-2-10

3

2

1

D

I -- DRAIN CURRENT (mA)

0

0 0.2 0.4 0.6 0.8 1

O

T = +25 C

A

TYP V = -5.0V

GS(OFF)

GS

V = 0V

V - DRAIN-SOURCE VOL TAGE(V)

DS

-0.5V

-1.0V

-1.5V

-2.0V

-2.5V

-3.0V

-3.5V

-4.0V

Output Conductance vs

Drain Current

O

T = +25 C

A

f = 1.0 kHz

20 10

V = 5v

DG

5

1

0.5

V = -1.5V

GS(OFF)

0.1

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

gos -- OUTPUT CONDUCTANCE (u mhos)

V = -5.5V

GS(OFF)

10

20

5

15

10 15

20

V = -3.5V

GS(OFF)

I -- DRAIN CURRENT (mA)

D

5.0V 10V

15V

20V

Transconductance

Parameter Interactions

Ω

gfs, I @ V = 15 V, V = 0 PULSE

20

DS

10

r -- DRAIN "ON" RESISTANCE ( )

-

1235710

DSDSS

r @ V = 100mV, V = 0

DS

V @ V = 15V, I = 1nA

GS(OFF)

V - GATE-SOURCE VOLTAGE(V)

GS

--

GS

GS D

--

100 50

30 20

10 5

3 2

1

-

DSS

I -- DRAIN CURRE NT ( mA )

gfs --- TRANSCONDUCTANCE ( mmhos )

Typical Characteristics (continued)

2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486

N-Channel RF Amplifier

(continued)

Transc ond uctance vs

Drain Current

10

V = - 1.5V

GS( OFF)

5

T = +125 C

1

0.5

0.1

gfs -- TRANSCONDUCTANCE (mmhos)

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

O

T = -55 C

A

O

T = +25 C

A

O

A

V = - 5V

GS( OFF)

I - DRAIN CURRENT (mA)

D

T = -55 C

A

T = +25 C

A

T = +125 C

O

A

V = 15V

DG

f = 1.0 kHz

Capacitance vs Voltage

10

5

C ( V = 15 V)

1

rs

is

C ( C ) -- CA PACITANCE (pF )

V -- GATE-SOURCE VOLTAGE(V)

GS

f = 0.1 - 1.0 MHz

is

DS

C ( V = 0 V)

rs

DS

Noise Voltage vs Frequency

V = 15V

DG

BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2 f @ f > 1.0 kHz

I = 0.5 mA

O

10

5

I = 3 mA

D

n

e - NOISE VOLTAGE ( nV/ Hz )

1

0.01 0.03 0.1 0.3 1 3 10 30 100

D

f -- FREQUENCY (kHz)

Noise Figure Frequency

5

V = 15V

DS

I = 5.0 mA

D

4

R = 1.0 k

g

T = +25 C

A

3

2

NF -- NOISE FIGURE (dB)

1

0

-20-15-10-50

10 20 30 50 100 200 300 500 1000

Ω

O

f -- FREQUENCY (MHz)

5

Power Dissipation vs. Ambient Temperature

350 300

SOT-23

250 200 150 100

50

D

P - POWER DISS IPATION (mW)

0

0 255075100125150

TO-92

TEMPERATURE ( C)

º

Common Source Characteristics

2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486

N-Channel RF Amplifier

(continued)

Input A d mittance

10

V = 15V

DS

V = 0

5

GS

(CS)

1

b

iss

g

iss

Y -- INPUT ADMITTANCE (mmhos)

100 200 300 500 700 1000

f -- FREQUENCY (MHz)

Forward Transadmittance

10

5

1

fss

Y -- FORWARD TRANSFER (mmhos)

100 200 300 500 700 1000

+g

V = 15V

DS

V = 0

GS

(CS)

fss

-b

fss

f -- FREQUENCY (MHz)

Output Admittance

1

b (x 10)

OSS

g

OSS

V = 15V

DS

V = 0

GS

(CS)

OSS

Y -- OUTPUT CONDUCTANCE (mmhos)

100 200 300 500 700 1000

f -- FREQUENCY (MHz)

Reverse Transadmittance

10

5

- b

1

V = 15V

DS

V = 0

GS

rss

(CS)

Y -- REVERSE TRANSFER (mmhos)

100 200 300 500 700 1000

rss

-g ( X 0.1)

f -- FREQUENCY (MHz)

rss

Fairchild MMBF5484, MMBF5485, MMBF5486, 2N5484, 2N5485 Schematic [ru]