6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT (250/400 VOLT PEAK)
MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M
PACKAGE |
SCHEMATIC |
6 |
ANODE 1 |
6 |
MAIN TERM. |
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6 |
CATHODE 2 |
5 |
NC* |
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1 |
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N/C 3 |
4 |
MAIN TERM. |
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1 |
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*DO NOT CONNECT |
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(TRIAC SUBSTRATE) |
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6
1
DESCRIPTION
The MOC301XM and MOC302XM series are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral switch, which functions like a triac. They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 VAC operations.
FEATURES
•Excellent IFT stability—IR emitting diode has low degradation
•High isolation voltage—minimum 5300 VAC RMS
•Underwriters Laboratory (UL) recognized—File #E90700
•Peak blocking voltage
–250V-MOC301XM
–400V-MOC302XM
•VDE recognized (File #94766)
–Ordering option V (e.g. MOC3023VM)
APPLICATIONS
• |
Industrial controls |
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Solenoid/valve controls |
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Traffic lights |
• Static AC power switch |
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Vending machines |
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Incandescent lamp dimmers |
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Solid state relay |
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Motor control |
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Lamp ballasts |
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© 2005 Fairchild Semiconductor Corporation |
Page 1 of 10 |
6/15/05 |
6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT (250/400 VOLT PEAK)
MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameters |
Symbol |
Device |
Value |
Units |
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TOTAL DEVICE |
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Storage Temperature |
TSTG |
All |
-40 to +150 |
°C |
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Operating Temperature |
TOPR |
All |
-40 to +85 |
°C |
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Lead Solder Temperature |
TSOL |
All |
260 for 10 sec |
°C |
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Junction Temperature Range |
TJ |
All |
-40 to +100 |
°C |
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Isolation Surge Voltage(1) |
VISO |
All |
7500 |
Vac(pk) |
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(peak AC voltage, 60Hz, 1 sec duration) |
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Total Device Power Dissipation @ 25°C |
PD |
All |
330 |
mW |
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Derate above 25°C |
4.4 |
mW/°C |
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EMITTER |
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Continuous Forward Current |
IF |
All |
60 |
mA |
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Reverse Voltage |
VR |
All |
3 |
V |
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Total Power Dissipation 25°C Ambient |
PD |
All |
100 |
mW |
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Derate above 25°C |
1.33 |
mW/°C |
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DETECTOR |
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Off-State Output Terminal Voltage |
VDRM |
MOC3010M/1M/2M |
250 |
V |
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MOC3020M/1M/2M/3M |
400 |
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Peak Repetitive Surge Current (PW = 1 ms, 120 pps) |
ITSM |
All |
1 |
A |
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Total Power Dissipation @ 25°C Ambient |
PD |
All |
300 |
mW |
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Derate above 25°C |
4 |
mW/°C |
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Note
1.Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
© 2005 Fairchild Semiconductor Corporation |
Page 2 of 10 |
6/15/05 |
6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT (250/400 VOLT PEAK)
MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters |
Test Conditions |
Symbol |
Device |
Min |
Typ |
Max |
Units |
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EMITTER |
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Input Forward Voltage |
IF = 10 mA |
VF |
All |
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1.15 |
1.5 |
V |
Reverse Leakage Current |
VR = 3 V, TA = 25°C |
IR |
All |
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0.01 |
100 |
µA |
DETECTOR |
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Peak Blocking Current,Either Direction |
Rated VDRM, IF = 0 (note 1) |
IDRM |
All |
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10 |
100 |
nA |
Peak On-State Voltage,Either Direction |
ITM = 100 mA peak, IF = 0 |
VTM |
All |
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1.8 |
3 |
V |
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristics |
Test Conditions |
Symbol |
Device |
Min |
Typ |
Max |
Units |
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MOC3020M |
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30 |
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MOC3010M |
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15 |
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MOC3021M |
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LED Trigger Current |
Voltage = 3V (note 3) |
IFT |
MOC3011M |
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10 |
mA |
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MOC3022M |
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MOC3012M |
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5 |
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MOC3023M |
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Holding Current, Either Direction |
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IH |
All |
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100 |
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µA |
Note
1.Test voltage must be applied within dv/dt rating.
2.This is static dv/dt. See Figure 5 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
3.All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (30 mA for MOC3020M, 15 mA for MOC3010M and MOC3021M, 10 mA for MOC3011M and MOC3022M, 5 mA for MOC3012M and MOC3023M) and absolute max IF (60 mA).
© 2005 Fairchild Semiconductor Corporation |
Page 3 of 10 |
6/15/05 |