MBR735
MBR735 - MBR760
MBR735 - MBR760, Rev. C
2001 Fairchild Semiconductor Corporation
MBR735 - MBR760
Schottky Rectifiers
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation 2.0 W
R
θ
JA
Thermal Resistance, Junction to Ambient 60
°
C/W
R
θ
JL
Thermal Resistance, Junction to Lead 3.0
°
C/W
Symbol
Parameter
Device
Units
735 745 750 760
V
F
Forward Voltage I
F =
7.5 A, T
C
= 25
°
C
I
F =
7.5 A, T
C
= 125
°
C
I
F =
15 A, T
C
= 25
°
C
I
F =
15 A, T
C
= 125
°
C
-
0.57
0.84
0.72
0.75
0.65
-
-
V
V
V
V
I
R
Reverse Current @ rated V
R
T
A
= 25
°
C
T
A
= 125
°
C
0.1
15
0.5
50
mA
mA
I
RRM
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
1.0 0.5 A
Features
•
Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
• Metal silicon junction, majority carrier
conduction.
• High current capacity, low forward
voltage drop.
• Guard ring for over voltage protection.
Thermal Characteristics
Symbol
Parameter
Value
Units
735 745 750 760
V
RRM
Maximum Repetitive Reverse Voltage 35 45 50 60 V
I
F(AV)
Average Rectified Forward Current 7.5 A
I
FSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
150 A
T
stg
Storage Temperature Range -65 to +175
°
C
T
J
Operating Junction Temperature -65 to +150
°C
Dimensions
are in:
inches (mm)
PIN 1 +
CASE
+
PIN 2 -
CASE Positive
TO-220AC
1
2
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