October 2007
2N7002DW
N-Channel Enhancement Mode Field Effect Transistor
Features
•Dual N-Channel MOSFET
•Low On-Resistance
•Low Gate Threshold Voltage
•Low Input Capacitance
•Fast Switching Speed
•Low Input/Output Leakage
•Ultra-Small Surface Mount Package
•Lead Free/RoHS Compliant
SC70-6 (SOT363)
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1 |
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1 |
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Marking : 2N |
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Absolute Maximum Ratings * Ta = 25°C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
Units |
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VDSS |
Drain-Source Voltage |
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60 |
V |
VDGR |
Drain-Gate Voltage RGS ≤ 1.0MΩ |
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60 |
V |
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VGSS |
Gate-Source Voltage |
Continuous |
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±20 |
V |
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Pulsed |
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±40 |
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ID |
Drain Current |
Continuous |
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115 |
mA |
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Continuous @ 100°C |
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73 |
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Pulsed |
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800 |
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TJ , TSTG |
Junction and Storage Temperature Range |
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-55 to +150 |
°C |
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* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol |
Parameter |
Value |
Units |
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PD |
Total Device Dissipation |
200 |
mW |
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Derating above TA = 25°C |
1.6 |
mW/°C |
RθJA |
Thermal Resistance, Junction to Ambient * |
625 |
°C/W |
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimun land pad size,
Transistor Effect Field Mode Enhancement Channel-N — 2N7002DW
© 2007 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
2N7002DW Rev. A |
1 |
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol |
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Parameter |
Test Condition |
MIN |
TYP |
MAX |
Units |
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Off Characteristics (Note1) |
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BVDSS |
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Drain-Source Breakdown Voltage |
VGS= 0V, ID=10uA |
60 |
78 |
- |
V |
IDSS |
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Zero Gate Voltage Drain Current |
VDS= 60V, VGS= 0V |
- |
0.001 |
1.0 |
uA |
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VDS= 60V, VGS= 0V, @TC = 125°C |
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7 |
500 |
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IGSS |
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Gate-Body Leakage |
VGS= ±20V, VDS= 0V |
- |
0.2 |
±10 |
nA |
On Characteristics (Note1) |
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VGS(th) |
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Gate Threshold Voltage |
VDS = VGS, ID = 250uA |
1.0 |
1.76 |
2.0 |
V |
RDS(ON) |
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Satic Drain-Source On-Resistance |
VGS = 5V, ID = 0.05A, |
- |
1.6 |
7.5 |
Ω |
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VGS = 10V, ID = 0.5A, @Tj = 125°C |
- |
2.53 |
13.5 |
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ID(ON) |
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On-State Drain Current |
VGS = 10V, VDS= 7.5V |
0.5 |
1.43 |
- |
A |
gFS |
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Forward Transconductance |
VDS = 10V, ID = 0.2A |
80 |
356.5 |
- |
mS |
Dynamic Characteristics |
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Ciss |
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Input Capacitance |
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- |
37.8 |
50 |
pF |
Coss |
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Output Capacitance |
VDS = 25V, VGS= 0V, f = 1.0MHz |
- |
12.4 |
25 |
pF |
Crss |
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Reverse Transfer Capacitance |
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- |
6.5 |
7.0 |
pF |
Switching |
Characteristics |
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tD(ON) |
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Turn-On Delay Time |
VDD = 30V, ID = 0.2A, VGEN= 10V |
- |
5.85 |
20 |
ns |
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RL = 150Ω, RGEN = 25Ω |
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tD(OFF) |
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Turn-Off Delay Time |
- |
12.5 |
20 |
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Note1 : Short duration test pulse used to minimize self-heating effect.
Transistor Effect Field Mode Enhancement Channel-N — 2N7002DW
© 2007 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
2N7002DW Rev. A |
2 |
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