Fairchild NDP710A, NDP710AE, NDP710B, NDP710BE, NDB710A service manual
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NDB710A
May 1994
NDP710A / NDP710AE / NDP710B / NDP710BE
NDB710A / NDB710AE / NDB710B / NDB710BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
42 and 40A, 100V. RDS(ON) = 0.038 and 0.042Ω.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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Absolute Maximum Ratings
D
G
S
TC = 25°C unless otherwise noted
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NDP710A NDP710AE |
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NDP710B NDP710BE |
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Symbol |
Parameter |
NDB710A NDB710AE |
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NDB710B NDB710BE |
Units |
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VDSS |
Drain-Source Voltage |
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100 |
V |
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VDGR |
Drain-Gate Voltage (RGS < 1 MΩ) |
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100 |
V |
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VGSS |
Gate-Source Voltage - Continuous |
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±20 |
V |
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- Nonrepetitive (tP < 50 μs) |
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±40 |
V |
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ID |
Drain Current - Continuous |
42 |
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40 |
A |
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- Pulsed |
168 |
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160 |
A |
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PD |
Total Power Dissipation @ TC = 25°C |
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150 |
W |
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Derate above 25°C |
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1 |
W/°C |
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TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
°C |
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TL |
Maximum lead temperature for soldering |
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275 |
°C |
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purposes, 1/8" from case for 5 seconds |
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© 1997 Fairchild Semiconductor Corporation
NDP710.SAM
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol |
Parameter |
Conditions |
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Type |
Min |
Typ |
Max |
Units |
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DRAIN-SOURCE AVALANCHE RATINGS (Note 1) |
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EAS |
Single Pulse Drain-Source |
VDD = 25 V, ID = 42 A |
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NDP710AE |
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700 |
mJ |
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Avalanche Energy |
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NDP710BE |
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NDB710AE |
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IAR |
Maximum Drain-Source Avalanche Current |
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42 |
A |
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NDB710BE |
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OFF CHARACTERISTICS |
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BVDSS |
Drain-Source Breakdown |
VGS = 0 V, ID = 250 µA |
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ALL |
100 |
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V |
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Voltage |
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IDSS |
Zero Gate Voltage Drain |
VDS = 100 V, |
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ALL |
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250 |
µA |
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Current |
VGS = 0 V |
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TJ |
= 125°C |
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1 |
mA |
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IGSSF |
Gate - Body Leakage, Forward |
VGS = 20 V, VDS = 0 V |
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ALL |
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100 |
nA |
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IGSSR |
Gate - Body Leakage, Reverse |
VGS = -20 V, VDS = 0 V |
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ALL |
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-100 |
nA |
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ON CHARACTERISTICS (Note 2) |
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VGS(th) |
Gate Threshold Voltage |
VDS = VGS, |
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ALL |
2 |
2.9 |
4 |
V |
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ID = 250 µA |
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TJ |
= 125°C |
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1.4 |
2.2 |
3.6 |
V |
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RDS(ON) |
Static Drain-Source |
VGS = 10 V, |
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NDP710A |
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0.026 |
0.038 |
Ω |
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On-Resistance |
ID = 21 A |
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NDP710AE |
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NDB710A |
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TJ = 125°C |
NDB710AE |
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0.044 |
0.08 |
Ω |
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VGS = 10 V, |
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NDP710B |
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0.042 |
Ω |
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ID = 20 A |
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NDP710BE |
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NDB710B |
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TJ = 125°C |
NDB710BE |
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0.09 |
Ω |
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ID(on) |
On-State Drain Current |
VGS = 10 V, VDS = 10 V |
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NDP710A |
42 |
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A |
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NDP710AE |
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NDB710A |
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NDB710AE |
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NDP710B |
40 |
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A |
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NDP710BE |
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NDB710B |
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NDB710BE |
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gFS |
Forward Transconductance |
VDS = 10 V, ID = 21 A |
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ALL |
20 |
28 |
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S |
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DYNAMIC CHARACTERISTICS |
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C |
Input Capacitance |
VDS = 25 V, VGS = 0 V, |
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ALL |
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2840 |
3600 |
pF |
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iss |
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f = 1.0 MHz |
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Coss |
Output Capacitance |
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ALL |
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550 |
700 |
pF |
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Crss |
Reverse Transfer Capacitance |
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ALL |
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175 |
200 |
pF |
NDP710.SAM
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