Fairchild 2N5457, 2N5458, 2N5459, MMBF5457, MMBF5458 service manual

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Fairchild 2N5457, 2N5458, 2N5459, MMBF5457, MMBF5458 service manual

 

 

 

 

 

 

 

 

 

MMBF5457

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2N5457

 

 

 

 

 

 

 

2N5458

MMBF5458

 

 

 

 

 

 

 

2N5459

MMBF5459

 

G

 

 

TO-92

S

G

 

S D

SOT-23

D NOTE: Source & Drain

 

Mark: 6D / 61S / 6L

are interchangeable

N-Channel General Purpose Amplifier

This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

Process 55.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

 

 

 

 

VDG

Drain-Gate Voltage

25

V

VGS

Gate-Source Voltage

- 25

V

IGF

Forward Gate Current

10

mA

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

° C

 

 

 

 

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

 

Max

Units

 

 

 

 

 

 

 

 

2N5457-5459

 

*MMBF5457-5459

 

PD

Total Device Dissipation

625

 

350

mW

 

Derate above 25° C

5.0

 

2.8

mW/° C

Rθ JC

Thermal Resistance, Junction to Case

125

 

 

° C/W

 

 

 

 

 

 

Rθ JA

Thermal Resistance, Junction to Ambient

357

 

556

° C/W

 

 

 

 

 

 

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

5459 / 5458 / MMBF5457 / 5459 / 5458 / 2N5457

1997 Fairchild Semiconductor Corporation

N-Channel General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

 

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V(BR)GSS

Gate-Source Breakdown Voltage

IG = 10 A, VDS = 0

 

- 25

 

 

V

 

 

 

 

 

 

 

 

 

 

IGSS

Gate Reverse Current

VGS = -15 V, VDS = 0

 

 

 

- 1.0

nA

 

 

 

VGS = -15 V, VDS = 0, TA = 100° C

 

 

- 200

nA

 

VGS(off)

Gate-Source Cutoff Voltage

VDS = 15 V, ID = 10 nA

5457

- 0.5

 

- 6.0

V

 

 

 

 

5458

- 1.0

 

- 7.0

V

 

 

 

 

5459

- 2.0

 

- 8.0

V

 

VGS

Gate-Source Voltage

VDS = 15 V, ID = 100 A

5457

 

- 2.5

 

V

 

 

 

VDS = 15 V, ID = 200 A

5458

 

- 3.5

 

V

 

 

 

VDS = 15 V, ID = 400 A

5459

 

- 4.5

 

V

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

IDSS

Zero-Gate Voltage Drain Current*

VDS = 15 V, VGS = 0

5457

1.0

3.0

5.0

mA

 

 

 

 

5458

2.0

6.0

9.0

mA

 

 

 

 

5459

4.0

9.0

16

mA

 

SMALL SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

gfs

Forward Transfer Conductance*

VDS = 15 V, VGS = 0, f = 1.0 kHz

1000

 

5000

 

 

 

 

 

5457

 

mhos

 

 

 

 

5458

1500

 

5500

mhos

 

 

 

 

5459

2000

 

6000

mhos

 

gos

Output Conductance*

VDS = 15 V, VGS = 0, f = 1.0 kHz

 

10

50

mhos

 

Ciss

Input Capacitance

VDS = 15 V, VGS = 0, f = 1.0 MHz

 

4.5

7.0

pF

 

Crss

Reverse Transfer Capacitance

VDS = 15 V, VGS = 0, f = 1.0 MHz

 

1.5

3.0

pF

 

NF

Noise Figure

VDS = 15 V, VGS = 0, f = 1.0 kHz,

 

 

3.0

dB

 

 

 

RG = 1.0 megohm, BW = 1.0 Hz

 

 

 

 

 

*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%

 

 

 

 

 

 

Typical Characteristics

Transfer Characteristics

Transfer Characteristics

5459 / 5458 / MMBF5457 / 5459 / 5458 / 2N5457

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