|
|
|
|
|
|
|
|
|
MMBF5457 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2N5457 |
||
|
|
|
|
|
|
|
2N5458 |
MMBF5458 |
|
|
|
|
|
|
|
|
2N5459 |
MMBF5459 |
|
G |
|
|
TO-92 |
S |
G |
|
|
S D |
SOT-23 |
D NOTE: Source & Drain |
|
Mark: 6D / 61S / 6L |
are interchangeable |
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol |
Parameter |
Value |
Units |
|
|
|
|
VDG |
Drain-Gate Voltage |
25 |
V |
VGS |
Gate-Source Voltage |
- 25 |
V |
IGF |
Forward Gate Current |
10 |
mA |
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
° C |
|
|
|
|
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol |
Characteristic |
|
Max |
Units |
|
|
|
|
|
|
|
|
|
2N5457-5459 |
|
*MMBF5457-5459 |
|
PD |
Total Device Dissipation |
625 |
|
350 |
mW |
|
Derate above 25° C |
5.0 |
|
2.8 |
mW/° C |
Rθ JC |
Thermal Resistance, Junction to Case |
125 |
|
|
° C/W |
|
|
|
|
|
|
Rθ JA |
Thermal Resistance, Junction to Ambient |
357 |
|
556 |
° C/W |
|
|
|
|
|
|
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
5459 / 5458 / MMBF5457 / 5459 / 5458 / 2N5457
1997 Fairchild Semiconductor Corporation
N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
|
Symbol |
Parameter |
Test Conditions |
Min |
Typ |
Max |
Units |
|
|
|
|
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
V(BR)GSS |
Gate-Source Breakdown Voltage |
IG = 10 A, VDS = 0 |
|
- 25 |
|
|
V |
|
|
|
|
|
|
|
|
|
|
IGSS |
Gate Reverse Current |
VGS = -15 V, VDS = 0 |
|
|
|
- 1.0 |
nA |
|
|
|
VGS = -15 V, VDS = 0, TA = 100° C |
|
|
- 200 |
nA |
|
|
VGS(off) |
Gate-Source Cutoff Voltage |
VDS = 15 V, ID = 10 nA |
5457 |
- 0.5 |
|
- 6.0 |
V |
|
|
|
|
5458 |
- 1.0 |
|
- 7.0 |
V |
|
|
|
|
5459 |
- 2.0 |
|
- 8.0 |
V |
|
VGS |
Gate-Source Voltage |
VDS = 15 V, ID = 100 A |
5457 |
|
- 2.5 |
|
V |
|
|
|
VDS = 15 V, ID = 200 A |
5458 |
|
- 3.5 |
|
V |
|
|
|
VDS = 15 V, ID = 400 A |
5459 |
|
- 4.5 |
|
V |
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
IDSS |
Zero-Gate Voltage Drain Current* |
VDS = 15 V, VGS = 0 |
5457 |
1.0 |
3.0 |
5.0 |
mA |
|
|
|
|
5458 |
2.0 |
6.0 |
9.0 |
mA |
|
|
|
|
5459 |
4.0 |
9.0 |
16 |
mA |
|
SMALL SIGNAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
gfs |
Forward Transfer Conductance* |
VDS = 15 V, VGS = 0, f = 1.0 kHz |
1000 |
|
5000 |
|
|
|
|
|
|
5457 |
|
mhos |
||
|
|
|
|
5458 |
1500 |
|
5500 |
mhos |
|
|
|
|
5459 |
2000 |
|
6000 |
mhos |
|
gos |
Output Conductance* |
VDS = 15 V, VGS = 0, f = 1.0 kHz |
|
10 |
50 |
mhos |
|
|
Ciss |
Input Capacitance |
VDS = 15 V, VGS = 0, f = 1.0 MHz |
|
4.5 |
7.0 |
pF |
|
|
Crss |
Reverse Transfer Capacitance |
VDS = 15 V, VGS = 0, f = 1.0 MHz |
|
1.5 |
3.0 |
pF |
|
|
NF |
Noise Figure |
VDS = 15 V, VGS = 0, f = 1.0 kHz, |
|
|
3.0 |
dB |
|
|
|
|
RG = 1.0 megohm, BW = 1.0 Hz |
|
|
|
|
|
|
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2% |
|
|
|
|
|
|
Typical Characteristics
Transfer Characteristics |
Transfer Characteristics |
5459 / 5458 / MMBF5457 / 5459 / 5458 / 2N5457