January 2009
FSQ510, FSQ510H, and FSQ510M
Green Mode Fairchild Power Switch (FPS™)
for Valley Switching Converter – Low EMI and High Efficiency
Features
Uses an LDMOS Integrated Power Switch
Optimized for Valley Switching Converter (VSC)
Low EMI through Variable Frequency Control and Inherent Frequency Modulation
High Efficiency through Minimum Drain Voltage Switching
Extended Valley Switching for Wide Load Ranges
Small Frequency Variation for Wide Load Ranges
Advanced Burst-Mode Operation for Low Standby Power Consumption
Pulse-by-Pulse Current Limit
Protection Functions: Overload Protection (OLP), Internal Thermal Shutdown (TSD) with Hysteresis
Under-Voltage Lockout (UVLO) with Hysteresis
Internal Startup Circuit
Internal High-Voltage SenseFET: 700V
Built-in Soft-Start: 5ms
Applications
Auxiliary Power Supplies for LCD TV, LCD Monitor, Personal Computer, and White Goods
Description
A Valley Switching Converter (VSC) generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ510 (H or M) is an integrated valley switching pulse width modulation (VSPWM) controller and SenseFET specifically designed for offline switch-mode power supplies (SMPS) for valley switching with minimal external components. The VS-PWM controller includes an integrated oscillator, under-voltage lockout (UVLO), leading-edge blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise current sources for loop compensation, and self-protection circuitry.
Compared with discrete MOSFET and PWM controller solutions, the FSQ510 (H or M) can reduce total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a platform for cost-effective designs of a valley switching flyback converters.
Ordering Information
Part |
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Operating |
Current |
RDS(ON) |
Output Power Table (1) |
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Replaces |
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230VAC ± 15%(2) |
85-265VAC |
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Number |
Package |
Eco |
Junction |
Limit |
(MAX) |
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Devices |
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Status |
Temperature |
(3) |
Open |
(3) |
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Open |
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Adapter |
Frame(4) |
Adapter |
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Frame(4) |
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FSQ510 |
7-DIP |
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FSD210B |
FSQ510H |
8-DIP |
RoHS |
-40 to +130°C |
320mA |
32Ω |
5.5W |
9W |
4W |
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6W |
FSD210DH |
FSQ510M |
7-MLSOP |
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FSD210BM |
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Notes:
1.The junction temperature can limit the maximum output power.
2.230VAC or 100/115VAC with voltage doubler.
3.Typical continuous power with a Fairchild charger evaluation board described in this datasheet in a nonventilated, enclosed adapter housing, measured at 50°C ambient temperature.
4.Maximum practical continuous power for auxiliary power supplies in an open-frame design at 50°C ambient temperature.
Converter Switching Valley for (FPS™) Switch Power Fairchild Mode Green — FSQ510M and FSQ510H, FSQ510,
© 2009 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 |
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Application Circuit
Vo
AC
IN
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Vstr |
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D |
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VS |
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Sync |
-PWM |
GND |
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Vfb |
V |
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cc |
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Figure 1. Typical Application Circuit
Internal Block Diagram
Sync |
VCC |
Vstr |
D |
4 (3) |
5 (7) |
8 (1) |
7 (8) |
200 ns delay
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0.7V / 0.1V |
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UVLO |
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VREF |
VREF VREF |
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8.7V / 6.7V |
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Idelay |
IFB |
OSC |
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Vfb |
3 |
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S |
Q |
(2) |
6R |
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R |
R |
360ns |
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LEB |
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0.85V / 0.75V |
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Rsense |
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(0.4V) |
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S/S |
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OLP |
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S |
5ms |
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TSD |
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Q |
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4.7V |
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A/R |
R |
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n(m):n stands for the pin number of 7-DIP and 7-MLSOP |
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m stands for the pin number of 8-DIP |
1,2 |
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(4,5,6) |
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GND |
Figure 2. Internal Block Diagram
Converter Switching Valley for (FPS™) Switch Power Fairchild Mode Green — FSQ510M and FSQ510H, FSQ510,
© 2009 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 |
2 |
Pin Assignments
Vstr |
D |
Vfb |
Vcc |
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FSQ510H |
Sync |
GND |
GND |
GND |
Figure 3. Package Diagrams for FSQ510(M) and FSQ510H
Pin Definitions
7-Pin |
8-Pin |
Name |
Description |
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1, 2 |
4, 5, 6 |
GND |
This pin is the control ground and the SenseFET source. |
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This pin is internally connected to the inverting input of the PWM |
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comparator. The collector of an opto-coupler is typically tied to this |
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3 |
2 |
Vfb |
pin. For stable operation, a capacitor should be placed between this |
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pin and GND. If the voltage of this pin reaches 4.7V, the overload |
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protection triggers, which shuts down the FPS. |
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This pin is internally connected to the sync-detect comparator for |
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4 |
3 |
Sync |
valley switching. In normal valley-switching operation, the threshold of |
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the sync comparator is 0.7V/0.1V. |
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5 |
7 |
VCC |
This pin is the positive supply input. This pin provides internal |
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operating current for both startup and steady-state operation. |
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7 |
8 |
D |
High-voltage power SenseFET drain connection. |
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This pin is connected directly, or through a resistor, to the high- |
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voltage DC link. At startup, the internal high-voltage current source |
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8 |
1 |
Vstr |
supplies internal bias and charges the external capacitor connected |
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to the VCC pin. Once VCC reaches 8.7V, the internal current source is |
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disabled. |
Converter Switching Valley for (FPS™) Switch Power Fairchild Mode Green — FSQ510M and FSQ510H, FSQ510,
© 2009 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 |
3 |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol |
Parameter |
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Min. |
Max. |
Unit |
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VSTR |
Vstr Pin Voltage |
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500 |
V |
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VDS |
Drain Pin Voltage |
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700 |
V |
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VCC |
Supply Voltage |
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20 |
V |
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VFB |
Feedback Voltage Range |
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-0.3 |
Internally |
V |
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Clamped(5) |
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VSync |
Sync Pin Voltage |
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-0.3 |
6.5 |
V |
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7-DIP |
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1.38 |
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PD |
Total Power Dissipation |
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W |
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7-MLSOP |
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8-DIP |
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1.47 |
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Maximum Junction Temperature |
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+150 |
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TJ |
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°C |
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Recommended Operating Junction |
-40 |
+140 |
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Temperature(6) |
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TSTG |
Storage Temperature |
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-55 |
+150 |
°C |
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Notes:
5.VFB is internally clamped at 6.5V (ICLAMP_MAX<100uA) which has a tolerance between 6.2V and 7.2V.
6.The maximum value of the recommended operating junction temperature is limited by thermal shutdown.
Thermal Impedance
TA=25°C unless otherwise specified. Items are tested with the standards JESD 51-2 and 51-10 (DIP).
Symbol |
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Parameter |
Value |
Unit |
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7-DIP, 7-MLSOP |
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θJA |
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Junction-to-Ambient Thermal Impedance(7) |
90 |
°C/W |
θJC |
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Junction-to-Case Thermal Impedance(8) |
13 |
°C/W |
8-DIP |
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θJA |
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Junction-to-Ambient Thermal Impedance(7) |
85 |
°C/W |
θJC |
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Junction-to-Case Thermal Impedance(8) |
13 |
°C/W |
Notes:
7.Free-standing with no heatsink; without copper clad; measurement condition - just before junction temperature TJ enters into TSD.
8.Measured on the DRAIN pin close to plastic interface.
Converter Switching Valley for (FPS™) Switch Power Fairchild Mode Green — FSQ510M and FSQ510H, FSQ510,
© 2009 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 |
4 |
Electrical Characteristics
TJ=25°C unless otherwise specified.
Symbol |
Parameter |
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Conditions |
Min. |
Typ. |
Max. |
Unit |
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SenseFET Section |
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BVDSS |
Drain-Source Breakdown Voltage |
VCC=0V, ID=100μA |
700 |
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V |
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IDSS |
Zero-Gate-Voltage Drain Current |
VDS=700V |
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150 |
μA |
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RDS(ON) |
Drain-Source On-State Resistance |
TJ=25°C, ID=180mA |
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28 |
32 |
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TJ=100°C, ID=180mA |
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42 |
48 |
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CISS |
Input Capacitance(9) |
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VGS=11V |
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96 |
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pF |
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COSS |
Output Capacitance(9) |
VDS=40V |
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28 |
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pF |
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tr |
Rise Time(9) |
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VDS=350V, ID=25mA |
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100 |
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ns |
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tf |
Fall Time(9) |
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VDS=350V, lD=25mA |
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50 |
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ns |
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Control Section |
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fS |
Initial Switching Frequency |
VCC=11V, VFB=5V, Vsync=0V |
87.7 |
94.3 |
100.0 |
kHz |
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fS |
Switching Frequency Variation(9) |
-25°C < TJ < 125°C |
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±5 |
±8 |
% |
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IFB |
Feedback Source Current |
VCC=11V, VFB=0V |
200 |
225 |
250 |
μA |
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tB |
Switching Blanking Time |
VCC=11V, VFB=1V, |
7.2 |
7.6 |
8.2 |
μs |
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Vsync Frequency Sweep |
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tWB |
Valley Detection Window Time(9) |
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3.0 |
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μs |
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DMAX |
Maximum Duty Ratio |
VCC=11V, VFB=3V |
54 |
60 |
66 |
% |
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DMIN |
Minimum Duty Ratio |
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VCC=11V, VFB=0V |
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0 |
% |
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VSTART |
UVLO Threshold Voltage |
VFB=0V, VCC Sweep |
8.0 |
8.7 |
9.4 |
V |
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VSTOP |
After Turn-on, VFB=0V |
6.0 |
6.7 |
7.4 |
V |
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tS/S |
Internal Soft-Start Time |
VSTR=40V, VCC Sweep |
3 |
5 |
7 |
ms |
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Burst-Mode |
Section |
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VBURH |
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0.75 |
0.85 |
0.95 |
V |
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VBURL |
Burst-Mode Voltage |
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VCC=11V, VFB Sweep |
0.65 |
0.75 |
0.85 |
V |
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HYS |
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100 |
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mV |
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Protection Section |
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ILIM |
Peak Current Limit |
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di/dt=90mA/µs |
280 |
320 |
360 |
mA |
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VSD |
Shutdown Feedback Voltage |
VDS=40V, VCC=11V, |
4.2 |
4.7 |
5.2 |
V |
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VFB Sweep |
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IDELAY |
Shutdown Delay |
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FSQ510H |
VCC=11V, VFB=5V |
4 |
5 |
6 |
μA |
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Current |
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FSQ510(M) |
3.5 |
4.5 |
5.5 |
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tLEB |
Leading-Edge Blanking Time(9) |
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360 |
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ns |
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TSD |
Thermal Shutdown Temperature(9) |
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130 |
140 |
150 |
°C |
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HYS |
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60 |
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°C |
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Synchronous Section |
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VSH |
Synchronous Threshold Voltage |
VCC=11V, VFB=1V |
0.55 |
0.70 |
0.85 |
V |
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VSL |
VCC=11V, VFB=1V |
0.05 |
0.10 |
0.15 |
V |
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tSync |
Synchronous Delay Time |
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180 |
200 |
220 |
ns |
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Total Device Section |
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IOP |
Operating Supply Current |
VCC=11V, VFB=5.5V |
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0.8 |
1.0 |
mA |
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(Control Part Only) |
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ICH |
Startup Charging Current |
VCC=VFB=0V,VSTR=40V |
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1.0 |
1.2 |
mA |
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VSTR |
Supply Voltage |
|
VCC=VFB=0V, VSTR Sweep |
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27 |
|
V |
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Note:
9.These parameters, although guaranteed, are not 100% tested in production.
Converter Switching Valley for (FPS™) Switch Power Fairchild Mode Green — FSQ510M and FSQ510H, FSQ510,
© 2009 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 |
5 |
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