April 2009
MOC215M, MOC216M, MOC217M
Small Outline Surface Mount Phototransistor
Optocouplers
Features
■U.L. recognized (File #E90700, Volume 2)
■VDE recognized (File #136616)
(add option “V” for VDE approval, i.e, MOC205VM)
■Convenient plastic SOIC-8 surface mountable package style
■Low LED input current required for easier logic interfacing
■Standard SOIC-8 footprint, with 0.050" lead spacing
■Compatible with dual wave, vapor phase and IR reflow soldering
■High input-output isolation of 2500 VAC(rms) guaranteed
Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through- the-board mounting.
Marking Information
■MOC215M = 215
■MOC216M = 216
■MOC217M = 217
Applications
■Low power logic circuits
■Interfacing and coupling systems of different potentials and impedances
■ Telecommunications equipment |
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■ Portable electronics |
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Schematic |
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ANODE 1 |
8 |
N/C |
CATHODE 2 |
7 |
BASE |
N/C 3 |
6 |
COLLECTOR |
N/C 4 |
5 |
EMITTER |
©2005 Fairchild Semiconductor Corporation |
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www.fairchildsemi.com |
MOC215M, MOC216M, MOC217M Rev. 1.0.1 |
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Optocouplers Phototransistor Mount Surface Outline Small — MOC217M MOC216M, MOC215M,
Absolute Maximum Ratings (TA = 25°C Unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol |
Rating |
Value |
Unit |
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EMITTER |
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IF |
Forward Current – Continuous |
60 |
mA |
IF (pk) |
Forward Current – Peak (PW = 100µs, 120pps) |
1.0 |
A |
VR |
Reverse Voltage |
6.0 |
V |
PD |
LED Power Dissipation @ TA = 25°C |
90 |
mW |
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Derate above 25°C |
0.8 |
mW/°C |
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DETECTOR |
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VCEO |
Collector-Emitter Voltage |
30 |
V |
VCBO |
Collector-Base Voltage |
70 |
V |
VECO |
Emitter-Collector Voltage |
7.0 |
V |
IC |
Collector Current-Continuous |
150 |
mA |
PD |
Detector Power Dissipation @ TA = 25°C |
150 |
mW |
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Derate above 25°C |
1.76 |
mW/°C |
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TOTAL DEVICE |
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VISO |
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)(1)(2) |
2500 |
Vac(rms) |
PD |
Total Device Power Dissipation @ TA = 25°C |
250 |
mW |
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Derate above 25°C |
2.94 |
mW/°C |
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TA |
Ambient Operating Temperature Range |
-40 to +100 |
°C |
Tstg |
Storage Temperature Range |
-40 to +125 |
°C |
Notes:
1.Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2.For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
Optocouplers Phototransistor Mount Surface Outline Small — MOC217M MOC216M, MOC215M,
©2005 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
MOC215M, MOC216M, MOC217M Rev. 1.0.1 |
2 |
Electrical Characteristics (TA = 25°C unless otherwise specified)
Symbol |
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Characteristic |
Test Conditions |
Min. |
Typ.* |
Max. |
Unit |
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EMITTER |
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VF |
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Forward Voltage |
IF = 1.0mA |
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1.07 |
1.3 |
V |
IR |
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Reverse Leakage Current |
VR = 6.0V |
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0.001 |
100 |
µA |
C |
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Capacitance |
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18 |
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pF |
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DETECTOR |
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ICEO |
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Collector-Emitter Dark Current |
VCE = 5.0V, TA = 25°C |
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1.0 |
50 |
nA |
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VCE = 5.0V, TA = 100°C |
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1.0 |
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µA |
BVCEO |
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Collector-Emitter Breakdown Voltage |
IC = 100µA |
30 |
100 |
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V |
BVECO |
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Emitter-Collector Breakdown Voltage |
IE = 100µA |
7.0 |
10 |
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V |
CCE |
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Collector-Emitter Capacitance |
f = 1.0MHz, VCE = 0 |
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7.0 |
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pF |
COUPLED |
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CTR |
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Output Collector Current(4) |
IF = 1.0mA, VCE = 5.0V |
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% |
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MOC215M |
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20 |
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MOC216M |
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50 |
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MOC217M |
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100 |
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VCE(sat) |
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Collector-Emitter Saturation Voltage |
IC = 100µA, IF = 1.0mA |
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0.4 |
V |
ton |
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Turn-On Time |
IC = 2.0mA, VCC = 10V, |
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4.0 |
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µs |
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RL = 100Ω, (Fig. 10) |
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toff |
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Turn-Off Time |
IC = 2.0mA, VCC = 10V, |
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4.0 |
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µs |
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RL = 100Ω (Fig. 10) |
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tr |
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Rise Time |
IC = 2.0mA, VCC = 10V, |
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3.0 |
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µs |
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RL = 100Ω (Fig. 10) |
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tf |
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Fall Time |
IC = 2.0mA, VCC = 10V, |
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3.0 |
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µs |
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RL = 100Ω (Fig. 10) |
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VISO |
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Input-Output Isolation Voltage(1)(2)(3) |
f = 60 Hz, t = 1.0 min. |
2500 |
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Vac(rms) |
RISO |
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Isolation Resistance(2) |
VI-O = 500V |
1011 |
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Ω |
CISO |
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Isolation Capacitance(2) |
VI-O = 0, f = 1.0MHz |
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0.2 |
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pF |
*Typical values at TA = 25°C
Notes:
1.Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2.For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3.VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec.
4.Current Transfer Ratio (CTR) = IC/IF x 100%.
Optocouplers Phototransistor Mount Surface Outline Small — MOC217M MOC216M, MOC215M,
©2005 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
MOC215M, MOC216M, MOC217M Rev. 1.0.1 |
3 |
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